• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.101-104
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• 2003

The maximum coercive force of SmCo thin film was obtained at the Sm=28.2% and dc bias field was generated to CoZrNb, soft magnetic thin film, deposited on the SmCo thin film. DC field point having the maximum permeability for CoZrNb was shifted to higher dc field. DC field strength increased as the length of easy direction of magnetization decreased and 60Oe was measured for $3mm{\times}0.5mm$ sample.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.216-217
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.337-345
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• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.262-266
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• 2001

The magnetic switching volume is known as an important parameter to understand the magnetization reversal process, thermal stability of the written information and media noise. This parameter is influenced significantly by the microstructure of the magnetic layer as well as underlayer. Therefore, we fabricated CoSm/Cr thin films with varying magnetic layer thickness under constant sputtering by using a dc magnetic sputtering machine. The magnetic layer thickness effect on the magnetic switching volume have been studied by the means of magnetic viscosity and dc demagnetization remanence curve mesurements. From these measurements, we found that the switching volumes increased with increasing the magnetic layer thickness, whereas the coercivity showed different behavior. These may be a result of the increased intergranular coupling and the larger volume fraction of the magnetic layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.258.2-258.2
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• 2007

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.5-8
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• 2007

We have investigated the superconducting properties and surface morphology of $Sm_xBa_yCu_3O_{6+z}$ thin films deposited on LMO/IBAD-MgO/Hastelloy which prepared with different composition ratio by co-evaporation method(EDDC, Evaporation using Drum in Dual Chambers). We observed the composition ratio of SmBCO thin films by EDS analysis. We fabricated SmBCO thin film with critical current density of $1.5{\times}10^6A/cm^2$ at composition ratio of SM:Ba:Cu=1.10:2.01:3(at 77 K self-field). And, we confirmed that substitution of Sm-Ba did not occur at Cu rich phase by EDS analysis.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.63-71
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• 2001

The effects of an Ag seed layer on the magnetic properties and the microstructural evolution of SmCo/Cr thin films deposited on glass substrates were investigated. Coercivity of the films is 2.0 kOe when the thickness of Ag seed layer was 1nm thick, but it increased to 2.7 kOe when the Ag seed layer thickness is 3 nm. The increase of coercivity for film with 3 nm-thick Ag is due to roughness of Cr and grain size of Cr by the Ag microbumps. Ar partial pressure influenced on the formation of Ag microbumps, for example, they were formed at 5 mTorr when Ag thickness was 1 nm. The mechanism of magnetization reversal of the SmCo films changed from domain wall motion to domain rotation as the Ag inserted. This was thought to be due to inhibition of domain wall motion by the reduction of Cr grain size and the increase of roughness.