• 한국수소및신에너지학회논문집
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• 제18권2호
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• pp.182-188
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• 2007

[ $Zr_{50}-Ni_{27}-Nb_{18}-Co_5$ ] amorphous alloys ribbon was prepared by a single-roller melt-spinning technique. In order to improve the hydrogen kinetics Pd-coating were carried out on each side of the amorphous ribbon. Pd prevents oxidation of Zr and catalyses the dissociation of molecular hydrogen to atomic hydrogen. In this work, the hydrogen embrittlement and surface properties on Zr-based amorphous alloys were investigated. The Zr-based amorphous alloys were characterized by X-ray diffractometry(XRD) and differential scanning calorimetry(DSC). The morphology of surface and roughness was observed by using scanning electron microscopy(SEM) and atomic force microscopy (AFM). A lattice parameter of both Pd and Zr-based amorphous alloy was increased after hydrogen permeation at 473 K. After hydrogen permeation at 473 K, some cracks were observed on the surface of Pd, which was the cause for the hydrogen embrittlement. The crystallization temperature of Zr-based amorphous alloy was decreased due to the permeated hydrogen.

• Journal of Magnetics
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• 제16권3호
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• pp.318-321
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• 2011

A new Fe-based amorphous compound powder was prepared from Fe-Si-B amorphous powder by crushing amorphous ribbons as the first magnetic component and Fe-Cr-Mo metallic glassy powder by water atomization as the second magnetic component. Subsequently by adding organic and inorganic binders to the compound powder and cold pressing, the new Fe-based amorphous compound powder cores were fabricated. This new Fe-based amorphous compound powder cores combine the superior DC-Bias properties and the excellent core loss. The core loss of 500 kW/$m^3$ at $B_m$ = 0.1T and f = 100 kHz was obtained When the mass ratio of FeSiB/FeCrMo equals 3:2, and meanwhile the DC-bias properties of the new Fe-based amorphous compound powder cores just decreased by 10% compared with that of the FeSiB powder cores. In addition, with the increasing of the content of the FeCrMo metallic glassy powder, the core loss tends to decrease.

• Journal of Magnetics
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• 제2권4호
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• pp.135-137
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• 1997

We report the salient features of the magnetic properties of amorphous TM70Cr5Si10B15(TM=Fe, Co, Ni) alloys. The temperature dependence of magnetization for amorphous ribbons were measured by a SQUID and a VSM from 5 K to 700 K under an external field of 10 kOe. Except TM70Cr5Si10B15 that shows a paramagnetic behaviour, both Fe and Co based amorphous alloys show a typical ferromagnetic thermo-magnetization curves. For these two ferromagnetic alloys, the saturation magnetization in the temperature range from 5 K to about 0.4 Tc can be descrived by the Bloch relation, Ms (T)=Ms(0) [1-BT3/2-CT5/2]. The spin wave stiffness constants and the range of exchange interaction were analyzed from the magnetization behaviour. The variation of the magnetic properties are discussed and compared with the composition of the alloys.

• Journal of Magnetics
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• 제9권1호
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.149-151
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• 1994

This thesis describes the effect of heat treatment on the magnetic properties of Co-bsaed Amorphous. A sample was chosen as basic composition with Co$\_$82//Si$\_$2//B$\_$16/ of zero magnetostriction. It was made by single roll method with quartz orifice 0.5[mmø], Ar gas pressure 0.6 [kg/cm$^2$] and roll speed 28 (m/sec) and atmosphere is ,Ar gas. We obtained the sample of width 2.4(mm), thickness 45[$\mu\textrm{m}$]. Made sample annealed for the improvement of magnetic propertics at at annealing temperature 325,350,375 and 400$^{\circ}C$ and annealing time 15, 30, 45, 60 and 120min respectiveily. Amorphous ribbon of co-based showed high permeab- ility ${\mu}$=8000∼14000, and became improvement of magnetic properties according to anneal ins temperature and time. Especially. Amorphous sample at 325$^{\circ}C$ ,45min appearanced high permeability ${\mu}$=13, 589 at frequency f= 100Hz. and loss factor was reduced at low frequency with rising anneal ins ti me and temperature more annealed sample than basic sample.

• Journal of Magnetics
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• 제18권2호
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• pp.159-162
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• 2013

We present how to optimize the operation condition including frequency of the orthogonal fluxgate sensor in this paper. The orthogonal fluxgate sensor was fabricated with a Co-based amorphous wire with 10 mm long and 100 ${\mu}m$ in the diameter and a 270-turn pickup coil wound on the amorphous wire. In order to investigate the frequency dependence of the sensitivity, output spectra of the sensor which was connected by using a coaxial cable with various lengths of 0.5-5 m were measured with a RF lock-in amplifier. The maximum sensitivities were obtained at different frequencies according to coaxial cable lengths. It was found that the optimal operation frequencies, at which maximum sensitivities were appeared, were almost identical to the frequencies of impedance resonance. The maximum sensitivity and optimal operation frequency were 1.1 V/Oe (${\approx}$ 11000 V/T) and 1.25 MHz respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.72-72
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• 1994

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.330-333
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• 2005

We investigated the liquid crystal (LC) alignment phenomena using a-C:H and a-C:F:H thin films. Homogeneous alignment is obtained using ion beam treated hydrogenated amorphous carbon (a-C:H) thin films. Homeotropic alignment is obtained using F treated a-C:H thin films, namely, fluorinated amorphous carbon (a-C:F:H) thin films. We investigated the relationship between the surface properties of amorphous carbon based alignment layer and LC alignment phenomena.

• 한국분말재료학회지
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• 제13권4호
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• pp.285-289
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• 2006

Co-Fe-Ni-B-Si-Cr based amorphous strips containing nitrogen were manufactured via melt spinning, and then devitrified by crystallization treatment at the various annealing temperatures of $300^{\circ}C{\sim}540^{\circ}C$ for up to 30 minutes in an inert gas $(N_2)$ atmosphere. The microstructures were examined by using XRD and TEM and the magnetic properties were measured by using VSM and B-H meter. Among the alloys, the amorphous ribbons of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ containing 121 ppm of nitrogen showed relatively high saturation magnetization. The alloy ribbons crystallized at $540^{\circ}C$ showed that the grain size of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ alloy containing 121 ppm of nitrogen was about f nm, which exhibited paramagnetic behavior. The formation of nano-grain structure was attributed to the finely dispersed Fe4N particles and the solid-solutionized nitrogen atoms in the matrix. Accordingly, it can be concluded that the nano-grain structure of 5nm in size could reduce the core loss within the normally applied magnetic field of 300A/m at 10kHz.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1701-1703
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• 2006

Here we describe a novel driving scheme in the form of negative AC bias stress (NAC) to compensate shift in the threshold voltage for hydrogenated amorphous silicon (${\alpha}$-Si:H) thin film transistor (TFT) for AMOLED applications. This scheme preserves the threshold voltage shift of ${\alpha}$-Si:H TFT for infinitely long duration of time(>30,000 hours) and thereby overall performance, without using any additional TFTs for compensation. We briefly describe about the possible driving schemes in order to implement for real time AMOLED applications. We attribute most of the results based on concept of plugging holes and electrons across the interface of the gate insulator in a controlled manner.