• Journal of Magnetics
• /
• v.4 no.4
• /
• pp.119-122
• /
• 1999

Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.12
• /
• pp.2214-2218
• /
• 2007

The effects of bath temperature on electrochemical behavior, alloy composition, crystallographic structure, morphology and the magnetic properties of electrodeposited Co-Pt-W(P) films were investigated. Electrochemical studies show that alloy electrodeposition has been shifted to more positive potentials and the critical time for nucleation decreased as electrolyte temperature increased. As the temperature increased from 40 oC to 80 oC, tungsten content in the deposit increased, while phosphorus content decreased. The films deposited at T = 40 oC exhibited soft magnetic properties. However, electrodeposited at T = 70 oC, the films exhibited hard magnetic properties. It is also demonstrated that higher temperature more than 70 oC could weaken hard magnetic properties. XRD results indicated that the deposits obtained at 50 oC-70 oC showed enhancement of [00.1] P.O. (preferred orientation) with the bath temperature, which resulted in the stronger perpendicular magnetic anisotropy.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.51.4-51
• /
• 1998

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.206-207
• /
• 2002

전기도금방식으로 구현된 자기박막 재료로서 CoPtP 박막은 이제까지 보고된 재료 중 가장 높은 보자력 (H$_{c}$ > 5 kOe)과 뛰어난 각형비 (S＊≒0.7)를 가지고 있는 3원계 합금 박막재료이며[1], 차세대 고밀도 자기저장매체로서 [2] 각광받고 있다. 하지만 이제까지 보고된 연구결과는 CoPtP 박막을 전기도금방식으로 제작했을 때, 두께가 약 1$\mu\textrm{m}$ 이상일 경우, 결정립이 큰 칼럼구조(columnar structure)가 성장하여 보자력이 현저히 떨어지는 현상[3]을 보여왔으며, 이러한 이유 때문에 MEMS 등에 응용되는데 많은 제약을 받아왔다. (중략)

• Korean Journal of Materials Research
• /
• v.11 no.4
• /
• pp.290-293
• /
• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Korean Journal of Materials Research
• /
• v.12 no.12
• /
• pp.962-966
• /
• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.7
• /
• pp.473-478
• /
• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.367-371
• /
• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Journal of Sensor Science and Technology
• /
• v.11 no.6
• /
• pp.358-364
• /
• 2002

In this paper, we used U.V.(wavelength, 355nm) laser for adjusting Pt thin films temperature sensor to $100{\Omega}$ at $0^{\circ}C$. Internationally, A-class tolerance of temperature sensor is $0.06{\Omega}$ at $0^{\circ}C$. This is under value of $0.15^{\circ}C$, actually, so high-fine trimming technology is essential to this process. The width of trimmed lines was about $10{\mu}m$ and the best trimming of Pt thin films of $1{\sim}1.5{\mu}m$ was carried out with power : 35mW, rep. rate frequency : 200Hz and bite size : $1.5{\mu}m$. And using photolithography process, 96 resistors were fabricated in $2"{\times}2"$ substrate as the proportion of $79{\sim}90{\Omega}$ and $91{\sim}102{\Omega}$ is 42.7% and 57.3%, respectively. As result of trimming resistors to the target value of $109.73{\Omega}$ at $25^{\circ}C$, 82.3% of resistors had the tolerance within ${\pm}0.30{\Omega}$ and the others(17.7%) were within ${\pm}0.06{\Omega}$ of A-class tolerance.