• Title/Summary/Keyword: Co-Cr-Ta/Ti

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Underlayer effects on crystallographic and magnetic characteristics of Co-Cr(-Ta) layer (Co-Cr(-Ta) 층의 결정성 및 자기적 특성에 미치는 하지층 효과)

  • 금민종;공석현;가출현;손인환;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.208-211
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    • 2000
  • We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

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Magnetic properties and the shapes of magnetic domain for $CoCr_{16.2}Pt_{10.8}Ta_4$ alloy films with the prior deposition of Ti layer ($CoCr_{16.2}Pt_{10.8}Ta_4$ 합금박막의 Ti 우선증착에 따른 자기적 특성과 자구형상변화)

  • 이인선;김동원
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.1
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    • pp.17-22
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    • 2000
  • A quaternary alloy film of $CoCr_{16.2}Pt_{10.8}Ta_4$was investigated for its magnetic properties and c-axis orientation with and without Ti underlayer. Additional elements such as Ta, Pt have been frequently introduced in CoCr alloy film for perpendicular recording as a means of improving magnetic performance. It has been reported that the addition of Pt and Ta in CoCr increase the coercivity and the magnetic isolation of columnar grains, respectively. However, CoCrPtTa perpendicular magnetic layer should be more increased its perpendicular magnetic anisotropy than at present for the application of ultrahigh recording density. The improvement of underlayers and substrate materials is one of the promised schemes to intensify the perpendicular magnetic anisotropy. In this study, the insertion of Ti underlayer shows the remarkable improvement of c-axis orientation compare with the direct deposition on the bare glass. The mechanism about this effect of Ti underlayer on CoCrPtTa is not to be clarified yet. Meanwhile, it is found that the magnetic domain of CoCrPtTa on 20 nm Ti underlayer has the continuous stripe pattern but the one of CoCrPtTa on 90 nm Ti underlayer shows the discrete mass type from the results of MFM investigation. This phenomenon is to be a distinct evidence that the improvement of perpendicular anisotropy by the adoption of Ti underlayer is originated from the reinforcement of the grain boundary segregation in CoCrPtTa alloy. Moreover, the transition of the M-H hysteresis pattern with the thickness of Ti underlayer indicates that the major contribution of Ti underlayer is not the magnetocrystalline anisotropy but the shape anisotropy due to the formation of uniform columnar grains by the nonmagnetic alloy segregation.

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Improvement of characteristics and dependence on underlayer substrate temperature of CoCrTa/Ti double layer (CoCrTa/Ti 이층막의 하지층기판온도의존성 및 특성개선)

  • 김용진;성하윤;금민종;손인환;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.492-495
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    • 2000
  • In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

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EFFECT OF PARAMAGNETIC Co$_{67}$Cr$_{33}$ UNDERLAYER ON CRYSTALLOGRAPHIC AND MAGNETIC CHARACTERISTICS OF Co-Cr-Ta LAYERS IN PERPENDICULAR MAGNETIC RECORDING MEDIA

  • Kim, Kyung-Hwan;Nakagawa, Shigeki;Takayama, Seiryu;Naoe, Masahiko
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.847-850
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    • 1996
  • The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.

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The magnetic characteristics of Co-Cr-(Ta) films (Co-Cr-(Ta)박막의 자기특성)

  • Kim, K-H;Jang, K-U;Kim, J-H;S Nakagawa;M Naoe
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.242-244
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    • 1996
  • The effects of $Co_{67}$C $r_{33}$ underlayer on the crystallographec and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}$C $r_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was improved by the $Co_{67}$C $r_{33}$ underlayers rather than Ti ones. However, the coercivity $H_{c}$ of Co-Cr-Ta layers deposited on $Co_{67}$C $r_{33}$ underlayer was as low as 250 Oe even at substrate temperature of 22$0^{\circ}C$. This $H_{c}$ decrease seems to be attributed to the effect of the $Co_{67}$C $r_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.yer.layer.yer.

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Preparation of Co-Cr-Ta recording layers by FTS (FIS에 의한 Co-Cr-Ta 기록층의 제작)

  • 공석현;손인환;박창옥;김재환;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.578-581
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    • 1999
  • The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

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A Study on the c-axis preferred orientation of CoCr(-Ta)/Si doublelayer (CoCr(-Ta)/Si 이층막의 c-축 우선 배향성에 관한 연구)

  • Kim, Y.J.;Park, W.H.;Kwon, S.K.;Son, I.H.;Choi, H.W.;Kim, K.H.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1475-1477
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    • 2001
  • In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

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High temperature oxidation behavior and surface modification of Ni-based superalloys (니켈기 초합금의 고온산화거동과 표면개질에 관한 연구)

  • Seol, Gyeong-Won
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.166-176
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    • 1994
  • Ni base superalloys are composed of solid sohltion hardening elements(Co, Cr. Mo. W and so on) and $\gamma '$ precipitation hardening elements(A1, Ti, Nb, Ta and so on). To Improve the mechanical properties and oxidation resistanre of superalloys, rare earth elements(%r, Hf, Y and so on) are added to the inner substrate, or are used as coating materials. Their pffects on the growth rate and adhes~on of oxide are changed according to the kinds of oxides such as $AI_2O_3$ and $Cr_2O_3$. The effect of yttrium on the oxidation rate, grain size of oxide, internal structure, and crack resistance was investigated for two kinds of Ni-base superalloys. One in AF'115 superalloy containing Hf and the other is MA6000 superalloy containing $Y_2O_3$. They werr owid~zed at high temperature after yttrium surface modification using ion coater. Yttrium coating on the AF115 and MA6000 superalloys results in a marked change in the growth of the inner oxide. For AF115 superalloy, the degree of gram boundary segregation of $Cr_2O_3$, and prefer en^ tial oxidation of Hf are decreased, and the shape of inner oxidation layer was changed from triangle to plate type. For MA6000 superalloy, $Cr_2O_3$ oxide scale was transformed as outer oxidation layer of CrZOI and inner oxidation layer of $Cr_2O_3$.

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