• Membrane and Water Treatment
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• v.5 no.3
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• pp.207-219
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• 2014

Fouling is one of the critical factors associated with the application of membrane technology in treating palm oil mill effluent (POME), due to the presence of high concentration of solid organic matter, oil, and grease. In order to overcome this, chemical cleaning is needed to enhance the effectiveness of membranes for filtration. The potential use of sodium hydroxide (NaOH), sodium chloride (NaCl), hydrochloric acid (HCl), ethylenediaminetetraacetic acid (EDTA), and ultrapure water (UPW) as cleaning agents have been investigated in this study. It was found that sodium hydroxide is the most powerful cleaning agent, the optimum conditions that apply are as follows: 3% for the concentration of NaOH, $45^{\circ}C$ for temperature solution, 5 bar operating pressure, and solution pH 11.64. Overall, flux recovery reached 99.5%. SEM images demonstrated that the membrane surface after cleaning demonstrated similar performance to fresh membranes. This is indicative of the fact that NaOH solution is capable of removing almost all of the foulants from PES membranes.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.6
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• pp.21-26
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• 2015

This study presents a development of the cleaning system in a nuclear power plant condenser. The tube cleaning system is very important equipment in a power plant condenser. Specially, removal of the fouling is a key process in the condenser tube. The objective of this study is development of a ball collector system for cleaning a condenser by using a sponge ball. This study uses CFD in order to optimize design of the ball strainer screen. Through the CFD, the implication of the ball strainer screen for static pressure distribution is examined. Results of research, this study have developed a 1/5 scale model for application to the power plant and developed a performance test equipment.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.174-178
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• 2007

The cleaning process to remove small particles, ions, and other polluted sources is one of the major parts in the recent semiconductor industry because it can cause fatal errors on the quality of the final products. According to the other reports, the major factors of bath's fluid motion are the cleaning method, nozzle, the geometry (of bath, guide and wafer), and the position (of guide and wafer). So to enhance cleaning efficiency in the bath, these factors must be controlled. The purpose of this study is to analyze and visualize fluid motion in the cleaning bath as basic data for designing the nozzle system and finding the process control parameters. For that, we used the general CFD code FLUENT.

• Journal of Korean Society of Water and Wastewater
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• v.30 no.5
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• pp.605-612
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• 2016

Membrane bioreactors (MBRs) employ a process of biological treatment that is based on a membrane that has the advantages of producing high-quality treated water and possessing a compact footprint. However, despite these advantages, the occurrence of "fouling" during the operation of these reactors causes the difficulty of maintenance. Hence, in this study, three physical cleaning methods, namely, backwashing, air scrubbing, and mechanical cleaning ball was performed to identify optimum operating conditions through laboratory scale experiments, and apply them in a pilot plant. Further, the existing MBR process was compared with these methods, and the field applicability of a combination of these physical cleaning methods was investigated. Consequently, MCB, direct control of cake fouling on the membrane surface was found to be the most effective. Moreover, as a result of operating with combination of the physical cleaning process in a pilot plant, the TMP increasing rate was found to be - 0.00007 MPa/day, which was 185% higher than that obtained using the existing MBR process. Therefore, assuming fouling only by cake filtration, about one year of operation without chemical cleaning is considered to be feasible through the optimization of the physical cleaning methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.715-718
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• 2008

An in-line wet etch/cleaning system was established for the research and development in wet etch process. The system was equipped with a reverse moving system for the reduction in the size of the in-line wet etch/cleaning system and it was possible for the glass substrate to be moved back and forth and alternated in a wet etch bath. For the comparison of the effect of the normal motion and that of the alternating motion on the in-line wet etch process, indium tin oxide(ITO) pattern was obtained through both wet etch process conditions. The results showed that the alternating motion is not inferior to the normal motion in etch rate and in etch uniformity. It is concluded that the alternating motion is possible to be applied to the in-line etch process.

• Journal of Korean Society for Quality Management
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• v.30 no.2
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• pp.72-85
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• 2002

Advances in computer and sensor technology have made it possible to obtain superlarge manufacturing process data in real time, letting us extract meaningful information from these superlarge data sets. We propose a systematic data analysis procedure which field engineers can apply easily to manufacture quality products. The procedure consists of data cleaning and data analysis stages. Data cleaning stage is to construct a database suitable for statistical analysis from the original superlarge manufacturing process data. In the data analysis stage, we suggest a graphical easy-to-implement approach to extract practical information from the cleaned database. This study will help manufacturing companies to achieve six sigma quality.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.204-207
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• 2016

Experimental study of UV-irradiated O₂/H₂ gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O₂/H₂ gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H₂. O₂ gas compete for UV (184.9 nm) absorption with PMMA producing O₃, O(¹D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.