• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.279-284
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• 2009

Traditionally, so-called "industrial waste gases", such ad exhaust from boilers at industrial installations and a large quantity of soot discharged from power station, before their release into the atmosphere, have been on occasion subjected to an air cleaning process to remove fine particles that may pollute the atmosphere (such as mist and dust containing various powdery or oily substances and moisture from industrial waste gases). The release of industrial waste gases containing these particles directly into the atmosphere poses a serious threat to the earth environment; and recovery of these noxious substances is required by law in some countries and local governments. in urban areas, air pollution from automobile exhaust and others creates a serious condition. Some homes are equipped with and use indoor air purifiers. In many of the kitchens of restaurants, smoke generated during cooking and otherwise contaminated air are cleansed by air purifiers before being released outside or recycled inside. For the dust collecting devices to recover the fine particles contained in contaminated air, the cause for air pollution and how to purify air, many types based on various principles are known. Specifically, classified based on theories of particle collection, filtration, gravity, inertia, centrifugation, electricity, and cleaning types are cited as available processes. Among them, an appropriate type is selected according to the size or type of fine particles to be collected and conditions for installation. For the efficiency of dust collection, a filtration system (by using bag filters and others) and electric system are particularly outstanding and are therefore used widely in various areas of industry. In this research, rotary type high performance oil mist and smoke collecting system with self auto cleaning device equipped with the cleaning fluid spraying section is investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.11-15
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• 2013

The wafer bonding process becomes a flexible approach to material and device integration. The bonding strength in 3-dimensional process is crucial factor in various interface bonding process such as silicon to silicon, silicon to metals such as oxides to adhesive intermediates. A measurement method of bonding strength was proposed by utilizing AFM applied CNT probe tip which indicated the relative simplicity in preparation of sample and to have merit capable to measure regardless type of films. Also, New Tool was utilized to measure of tip radius. The cleaned $SiO_2$-Si bonding strength of SPFM indicated 0.089 $J/m^2$, and the cleaning result by RCA 1($NH_4OH:H_2O:H_2O_2$) measured 0.044 $J/m^2$, indicated negligible tolerance which verified the possibility capable to measure accurate bonding strength. And it could be confirmed the effective bonding is possible through SPFM cleaning.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.747-750
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• 2007

This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing etch, PR strip and cleaning condition. Charges distributed along the metal line acts as a source of tungsten (W) plug corrosion when associated with following cleaning solution. In cleaning process after metal etch and PR strip, chemical selection is significantly important in terms of metal corrosion. Optimal corrosion preventive PH, no metal attack (choice of optimal inhibitants), high by product removal efficiency and optimal de ionized water treatment condition is critical to the metal corrosion prevention.

• Journal of Construction Engineering and Project Management
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• v.5 no.2
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• pp.44-52
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• 2015

Various approaches have been used in crack preparations and each of the approaches has advantages and disadvantages. Although the routing method has been widely used and seems to be the best approach among the approaches, it is not a complete solution for crack preparation. This paper compares and evaluates a pneumatic crack cleaning device (CCD) developed by Robotics and Intelligent Construction Automation group at Georgia Tech, over existing devices. Surveys were conducted to discover factors that affect the performance of crack/joint preparation work. Then, data for such information were collected via field tests for devices such as router, heat lancer, air blower and CCD. Performed field test results and follow-up interviews demonstrated that the utilization of CCD has potential to offer improvements in productivity, safety, and maintenance cost. An analytic hierarchical procedure (AHP) and economic analyses were conducted. The AHP analysis considered three factors including safety, quality and productivity while the economic analyses examined the alternatives in various ways. The results indicated that the CCD was ranked first and second for the AHP analysis and economic analysis, respectively. In conclusion, the field tests and results revealed that the utilization of CCD achieved satisfactorily in performance, quality, safety and control, and showed that it has high potential in crack cleaning practice.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.23 no.10
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• pp.656-661
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• 2011

The amount of water resources that can be used tend to be decreased gradually. In contrast, the rapidly increasing water consumption is a problem that need to be addressed. Renovation and equipment replacement to improve energy efficiency and to reduce expenditure for building usage is required. But the excessive initial investment cost and the prolonged of pay back period may be uneconomical choice. Water usage for cleaning the toilet bowl accounts for 27%of the total water usage. Water-saving valve that can select the amount of water for cleaning toilet bowl can be reduced expenditure. After installing water-saving valve, analysed the economic effects. Water-saving valves compared with flush valves, and researched the amount of water usage. Then analyzed for the economic effects. Water-saving valve was used 5.6 ${\ell}$/time for cleaning toilet bowl. In contrast, flush valve was consumed 8.4 ${\ell}$/time. Water-saving valve's water-saving rate was 33.3%. The initial payback period for Water-saving valve was 459.5 days. By a small investment in water saving valve, the economic benefits can be obtained.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.15-19
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• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2001-2003
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• 1999

Recently the ozone generation system is well used for cleaning the contaminated water by using the strong oxidization effects of ozone. Ozone generation system is composed of ozone generation device, air or oxygen supply device and high voltage apply device. In this paper, commercial frequency was applied to the wire typed conductor. The ozone concentration was measured with air or oxygen as a supplied gas, which can be used as basic data for the development of ozonizer system.

• Proceedings of the Korean Information Science Society Conference
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• 2005.11a
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• pp.778-780
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• 2005

최근 디지털 융합(Digital Convergence)이 활발히 진행되면서 이동형 장치(Mobile Device)는 더욱 대용량, 고성능화 되고 비휘발성 메모리 요구가 커지고 있다. 이에 휴대가 용이하여, 접근시간이 빠르고, 전력소비가 적은 플래시 메모리가 많이 사용되고 있으나 상대적으로 느린 지움 시간과 지움 횟수의 한계 등 극복해야할 문제점이 있다. 본 논문에서는 이러한 문제점을 해결하기 위한 플레인 지움 정책을 제안하고 성능평가를 실시한다. 제안하는 플레인 지움 정책은 기존의 지움 정책과 같이 플래시의 블록단위의 균등한 사용을 고려할 뿐만 아니라 임베디드 시스템의 제한된 성능을 고려하여 연산을 최소화한다. 제안된 방법은 Greedy, Cost-benefit 방법에 비해 Wear-leveling에서 성능을 향상시켰고, RCP(Ranked Cleaning Policy)에 비해 연산횟수를 감소시켰다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.