• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2018년도 추계 학술논문 발표대회
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• pp.138-139
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• 2018

The purpose of this study is to analyze the work of the existing manpower dependent cleaning method by investigating the window cleaning site. In this study, detailed work contents were confirmed by on-site investigation and interview with experts, and the relationship, procedure, repetition work, and time required for each work were analyzed. The future analysis results will be used as a basic data for comparative analysis of productivity and economical efficiency with the window cleaning device to be developed.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.33-40
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• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• 한국철도학회논문집
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• 제18권6호
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• pp.552-557
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• 2015

철도부지의 도상자갈은 윤활유, 중금속 등으로 오염된 경우가 많다. 이에 본 연구에서는 오염된 자갈표면의 오염물질을 물리적으로 제거하는 오염도상자갈의 건식 정화 기술 성능을 알아보고자 하였다. 오염도상자갈 표면에 경도가 높은 금강사 연마재를 압축공기를 이용하여 분사할 수 있는 오염자갈 정화 장치를 제작하고, 여기에 오염자갈을 투입하여, 처리 시간을 1~10분까지 다양하게 변화시키면서 도상자갈의 석유계총탄화수소와 중금속 등의 정화 효율을 알아보았다. 석유계총탄화수소 제거 효율은 기관차 정차장에서 포집한 차량 윤활유 오염자갈은 70-80%로 다소 높은 반면에, 분기기에서 포집한 분기기 윤활유 오염자갈은 40-60%로 비교적 낮았다. 중금속 제거 효율은 구리와 납이 90% 이상으로 높은 반면에 니켈과 아연은 65-80%로 비교적 낮았다. 실험 결과 건식 자갈 정화 기술은 오염자갈의 처리에 효율적임을 확인할 수 있었다.

• 한국산학기술학회논문지
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• 제21권12호
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• pp.612-618
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• 2020

최근에 외부 유리창 청소에 대한 수요는 증가하고 있으나, 이 청소는 매우 위험한 인력 의존형 작업이다. 또한 청결을 중시하는 업장에서 원하는 빈도로 자주 청소하는 것도 용이하지 않다. 따라서 이 작업을 자동화 할 필요가 있다. 본 연구에서는 특정 유리창에 부착하여, 그 유리창을 지속적으로 청소하는 장치의 개념을 제시하고, 이 장치의 경제적 타당성을 분석하였다. 분석 결과, 장비의 예상 제작비 1천만 원 수준이나, 투자 가능비용은 내구연한 5년 기준으로 최소 9.8백만 원, 내구연한 10년 기준으로 최소 103백만 원 수준이었다. 따라서 장비비 보다 예상 절감액이 충분히 커서, 경제적 타당성이 있는 것으로 평가 되었다. 본 연구에서는 정량적 지표만으로 분석하여, 안전성 향상에 의한 노무자 안전 사고 감소, 생산성 향상, 공기 단축, 품질 향상 등으로 인한 원가 절감 기대 값은 고려되지 않았다는 한계가 있다. 따라서 향후 고려되지 않은 기대 값을 추가하여 자동화 장비에 의한 원가절감 효과를 산출하면 경제성이 보다 정확하게 산정될 것으로 예상된다.

• 한국환경보건학회지
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• 제49권2호
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• pp.78-88
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• 2023

Background: Exposure to volatile organic compounds (VOCs) can have acute and chronic health effects on human beings in general and in working environments. In particular, VOCs are often emitted in large quantities in industrial settings. In such circumstances, there is a need to improve the indoor air quality at workplaces. Objectives: The purposes of this study were to verify the effectiveness of air cleaning devices in workplaces and provide alternative solutions for improving working environments. Methods: Personal exposure and area level of VOCs for workers were evaluated in a car-part adhesive process before and after installing an air cleaning device with a TiO₂-coated filter. Passive samplers and direct reading instruments were used to collect and analyze the VOCs, and the removal efficiency and improvement of air quality were evaluated. We also calculated the exposure index (EI) to assess the risk level in the workplace. Results: The removal efficiency for VOCs through the installation of the air cleaning device was approximately 26.9~69.0% as determined by the concentration levels before and after installation. The measured substances did not exceed the exposure limits for the work environment and the EI was less than 1. However, carcinogenic substances such as benzene, formaldehyde, carbon tetrachloride, and trichloroethylene were detected. Conclusions: The application of an air cleaning device can be a solution for controlling the indoor air quality in a workplace, particularly in cases where ventilation systems cannot be installed due to process limitations.

• 한국산학기술학회논문지
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• 제3권2호
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• pp.74-79
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• 2002

80년대 반도체 산업의 급격한 성장으로 오늘날 반도체 산업은 반도체소자의 초고집접화, 웨이퍼의 대구경화로 발전이 거듭났으며, 소자의 성능과 생산 수율의 향상을 위하여 실리콘 웨이퍼의 세정하는 기술 및 연구를 계속 진행하고 있다. 기존의 반도체 세정은 과다한 화학약품의 사용으로 비 환경친화적이며, 이에 본 연구에서는 기존의 세정방법을 대체하기 위한 방법으로 환경친화적인 전리수를 이용한 반도체 세정법을 하였다. 이때 실리콘 웨이퍼 표면의 원자적 상태의 변화가 발생하여 다양한 방법으로 확인할 수 있다. 본 연구에 서는 이러한 분석을 하기 위하여 기존세정의 화학약품과 전리수로 세정한 웨이퍼의 표면을 비교하였으며, 또한 온도 및 시간별 표면상태변화를 분석하였다. 특히 접촉각 변하에 중점을 두어 변화를 관찰하였으며, 음극수의 경우 17.28°, 양극수의 경우 34.1°의 낮은 접촉각을 얻을 수 있었다.

• 한국레이저가공학회지
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• 제4권3호
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• pp.22-29
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• 2001

A development of new surface clwaning technol ogies such as laser and aerosol in paeallel with the improvement of conventional wet mwthods becomes more essential in semiconductor industry due the confrontation of new challenges such as significant device shrink, environmental foralum inum do not work for copper as a new interconnection material, and more effective cleaning tools are required with decreasing the feature size less than 0.13 ㎛ as well as increasing the wafer size from 200 ㎜ to 300 ㎜. In this article, various cleaning techniques increasing laser cleaning are compared methodolgically hi order to understand their unique characteristics such as advantages and disadvantages according to the current clean ing issues. In particular, the current state of art of laser technique for semiconductors md prospects as a try cleaning method are described.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• 한국분말재료학회지
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• 제28권1호
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• pp.25-30
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• 2021

The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

• 한국재료학회지
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• 제14권1호
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.