• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.31-35
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• 2019

The lumped-parameter circuit model for a no- insulation (NI) high temperature superconductor (HTS) magnet has been well understood after many experimental and analytic studies over a decade. It successfully explains the non-linear charging behaviors of NI magnets. Yet, recently, multiple groups reported that the post-quench electromechanical behaviors of an NI HTS magnet may not be well explained by the lumped circuit model. The characteristic resistance of an NI magnet is one of the key parameters to characterize the so-called "NI behaviors" of an NI magnet and recently a few groups reported a potential that the characteristic resistance of an NI magnet may substantially vary during a quench. This paper deals with this issue, the increment of contact resistance of the no-insulation (NI) REBCO magnet during a quench and its impact on the post-quench behaviors. A 7 T 78 mm NI REBCO magnet that was previously built by the MIT Francis Bitter Magnet Laboratory was chosen for our simulation to investigate the increment of contact resistance to better duplicate the post-quench coil voltages in the simulation. The simulation results showed that using the contact resistance value measured in the liquid nitrogen test, the magnitude of the current through the coil must be much greater than the critical current. This indicates that the value of the contact resistance should increase sharply after the quench occurs, depending on the lumped circuit model.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.964-973
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• 2017

In this paper, we analyze the effects of parasitic components of common-mode choke on the common mode and differential mode in a wide band, and we propose a simple method for high-frequency modeling. Common mode and differential mode 2-port networks were configured and the S-parameters in each mode were measured using a network analyzer. Equivalent circuit elements were extracted from the measured results to model a high-frequency equivalent circuit, and the validity was verified by comparing the measured S-parameters with the simulation results.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.10
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• pp.1875-1880
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• 2011

This paper proposes a battery model applicable to Autonomie environment. Also, a various of experiment is implemented for validation. The proposed battery model modifies Randles equivalent circuit and battery parameters are extracted from pulsed current tests. The parameters are two-dimensional function of current and SOC(State of Charge). The battery model is developed in the Matlab/Simulink and is implemented for NiMH Panasonic HHR650D and compared with pulsed current discharge curves. The simulation results validate the accuracy of the proposed model and the model is also tested by adding it on Autonomie for HEV application. Constant current charge/discharge, pulsed current test that can be used to extract battery parameter are performed and test results are used to build up the proposed battery model for Autonomie.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.73-80
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• 2010

The grounding impedance is not lowered by expanding the dimension of the grounding electrode, and the length of grounding electrode which shows the minimum value of the grounding impedance for each condition of frequency and soil characteristics is existent, and it is defined as Critical Length. In this paper, a new distributed parameter circuit model considering the condition of the multi-layered soil structures was proposed, and the grounding impedance and critical length of the vertical grounding electrode were analyzed by using the newly proposed simulation model and the MATLAB program. As a consequence, it was found that the effect of the soil structure on the frequency-dependent grounding impedance and critical length of the vertical grounding electrode is significant. It is desirable to consider the soil structure in optimal design of the grounding system.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.2
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• pp.146-156
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• 2002

In this paper, a new virtual-straight line parameter determination methodology and fast time domain simulation technique for non-uniform interconnects are presented and verified. Time domain signal response of interconnects circuit considering the characteristic of non-linear transistor is performed by using model order reduction method. Since model order reduction method is peformed by using per unit length parameters, virtual- straight line parameters for non-uniform interconnects are determined. Its method is integrated into Berkeley SPICE and shown that time domain signal responses using proposed method have a good agreement with the results of conventional circuit simulator HSPICE. The proposed method can be efficiently employed in the high-performance VLSI circuit design since it can provide a fast and accurate time domain signal response of complicated multi - layer interconnects.

• 전기의세계
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• v.23 no.5
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• pp.47-53
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• 1974

The electrical cardiac pacemaker model described in this paper simulates the most important functional properies of cardiac pacemaker cells. It is a minimum-parameter model which has a simple relaxation oscillator circuit as its main element. The electrical cardiac pacemaker model is analyzed in detail in order to show that its characteristic is similar to that of cardiac pacemaker cells. The main feature of the model is the possibility of controlling the time course phase 4 depolarization, the threshold level and the maximum level of repolarization, the rate of cardiac pacemaker. Emphasis is placed on phenomena of acceleration and frequency entrainment. This particular pacemaker model is very useful for the study of interactions between cardiac pacemakers and the description of the mechanism of arrhythmias.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.108-111
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• 2000

The electrical characteristics of MQFP packages have been measured in RF regime. The s-parameter of the lead frame has been measured using the test fixture on which the do-capped package was mounted. A simple lumped equivalent circuit modeling of the lead frame and the test fixture can provide reasonable model parameters up to the frequency of 200 MHz.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2000.02a
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• pp.29-32
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• 2000

Superconducting transmission cable is one of interesting part in power application using high temperature super-conducting wire as transformance. One important parameter in HTS cable design is transport current distribution because it is related with current transmission capacity and loss. In this paper, we present the calculation theory of current distribution for multi-layer cable using the electric circuit model and in example, calculation results of current distribution and AC loss in each layer of 4-layer HTS transmission cable.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2300-2302
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• 2005

Metal-Semiconductor-Metal type photodetector was fabricated with AlGaAs/InGaAs Quantum Well FET structures using simplified processing steps. The DC and RF responses were measured by 850nm wavelength injection laser. A DC responsivity in the quasisaturated regime was 0.45 A/W in CW measurements, and a bandwidth measured using a 850nm 40 ps pulsed laser was 16GHz. An electrical equivalent circuit model was extracted from measured S-parameter.