• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1963-1965
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• 1998

In this paper, a new simplified configuration for a multi-level PWM inverter is proposed. The proposed inverter consists of an auxiliary circuit with one switching device, and 3 phase full-bridge inverter. The proposed inverter, in spite of reduction of the switching devices, offers characteristics similar to the NPC(Neutral - point - clamped)- PWM inverter. Also, since the reduction of the switching devices, the control strategy is simplified. And switching loss is reduced. In addition to, it is possible that reliable DC level voltage than former multi-level inverter. And load power application is same to conventional NPC-PWM inverter. The performance of the system is verified by simulation. In this paper, show the simulation result of the single phase full bridge inverter application.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.28-35
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• 1993

The MESFET can be used as a three-terminal varactor by employing gate depletion capacitance Cg. In this paper, a novel VCDRO(voltage controlled dielecric resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 6.33dBm output power at a frequency of 11.058GHz and tunning bandwidth of 45MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1222-1223
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• 2007

This paper suggests a 6-pulse-shift converter with PWM current-source inverter based on buck-boost configuration to improve the efficiency and to reduce the switching frequency of inverter for photovoltaic generation system, the device can be operated as interface system between solar module system and power system grid without energy storage cell. the circuit has six current-source buck-boost converter which operate chopper part has one full bridge inverter which make a decision the polarity of AC output. Therefore, the proposed PWM power inverter has advantages such as the reduction of witching loss and realization of unity power factor operation. the theoretical backgrounds are discussed and the input-output characteristics for the implemented prototype inverter using TMS320F2812 are verified experimentally in this paper.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.9
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• pp.940-946
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• 2015

In this paper, we study a method that amplifies the output gain of a high voltage pulse using 300 kHz or higher frequency. We conducted a study on a method for amplifying the output gain using the resonance between the capacitance components of the load and the parasitic components of the circuit, instead of the conservative method for amplifying the pulse-amplitude by raising the voltage of the power stage. In particular, the method simplifies the circuit configuration throughout the appliance of flyback-type topology instead of the bridge-type. There are advantages that prevent damage from overload and the heat in the output circuit through the hard switching by amplifying the gain of the output voltage applying to the load as given by the capacitance component of the output electrode to the output pulse waveform. This study proposed a method to enhance the spatial and electrical efficiency of the contact-type heating device through the dielectric heating method applied to the field of medical and industrial heating.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.239-244
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• 2004

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the LS band retrodirective antenna system. The mixer as a phase conjugator must have an If signal of which frequency is nearly as high as that of an RF signal, so this fact brings difficulty in the combination of input signals and the design of impedance matching circuit. The circuit configuration is chosen to be of the gate mixer using a pseudomorphic HEMT device. The operating frequencies are 4.00 ㎓, 2.01 ㎓, and 1.99 ㎓ for LO, RF, and IF, respectively. Conversion gain is measured to be 12.5 ㏈ and 1 ㏈ compression point -34 ㏈m at the LO power of -7 ㏈m. The mixer fabricated in this research is the single-ended type, where RF leakage signal appears inevitably at the If port because RF and If frequencies are almost the same. The circuit topology suggested here can be applied directly to the design of balanced-type mixers and phase conjugators.

• Journal of The Korean Association of Information Education
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• v.5 no.3
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• pp.364-373
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• 2001

In this paper, I have designed and implemented the total management system to integrate PC and communications device operation of elementary, middle, and high school. The proposed system gives system information management, network information management, and remote management for PC and circuit management and performance analysis function for a router. For PC management, it supports system and network configuration information monitoring and current screen view of PC by remote screen capture. For network management, it provides gathering information of a line interface and analysis function such as utilization by polling. Thru total management system, system manager of teacher can have integrated operations of computerized resources in school by collecting and monitoring information of PCs and network elements.

• Journal of electromagnetic engineering and science
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• v.13 no.1
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• pp.54-61
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• 2013

An equivalent model has been developed to estimate the electromagnetic immunity for integrated circuits under a complex electromagnetic environment. The complete model is based on the characteristics of the equipment and physical configuration of the device under test (DUT) and describes the measurement setup as well as the target integrated circuits under test, the corresponding package, and a specially designed printed circuit board. The advantage of the proposed model is that it can be applied to a SPICE-like simulator and the immunity of the integrated circuits can be easily achieved without costly and time-consuming measurements. After simulation, measurements were performed to verify the accuracy of the equivalent model for immunity prediction. The improvement of measurement accuracy due to the added effect of a bi-directional coupler in the test setup is also addressed.

• Journal of the Korean Society of Propulsion Engineers
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• v.2 no.3
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• pp.80-89
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• 1998

Propulsion subsystem transfers KOMPSAT into mission orbit and controls its attitude. Design factor consists of structure safety, electrical circuit design, consumable power estimation of thermal hardwares, damping device design of fuel transient pressure, and system configuration design by considering plume effect from thruster firing. System level analysis should be performed for verification of system design under launch vehicle and orbital environment. Electrical functional test of thermal control hardware, proof pressure test, cleanliness verification test, and internal/external leakage test of fuel feeding system should be carried out for performance estimation of propulsion system. Design and assembly process of propulsion subsystem was depicted and reliability of system was verified by test analysis in this paper.