• 제목/요약/키워드: Cho O

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Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs

  • Yoon, S.M.;Cheong, W.S.;Hwang, C.S.;Kopark, S.H.;Cho, D.H.;Shin, J.H.;Ryu, M.;Byun, C.W.;Yang, S.;Lee, J.I.;Chung, S.M.;Chu, H.Y.;Cho, K.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.222-225
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    • 2008

  • We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-O (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.

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Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD

  • Cha, Ham cho rom;Cho, Young Joon;Chang, Hyo Sik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.304.1-304.1
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    • 2016

  • We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

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Influence of gas mixture ratio on the secondary electron emission coefficient ($\gamma$) fo MgO single crystals and MgO protective layer in AC PDP

  • Lim, Jae-Yong;Jung, J.M.;Choi, M.C.;Ahn, J.C.;Cho, T.S.;Kim, T.Y.;Kim, S.S.;Jung, M.W.;Choi, S.H.;Kim, S.B.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Seo, Y.;Cho, G.S.;Kang, S.O.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.145-147
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    • 2000

  • The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

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