• Bulletin of the Korean Chemical Society
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• v.8 no.4
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• pp.304-310
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• 1987

The approximate rate and stoichiometry of the reaction of excess di-s-butoxyborane with selected organic compounds containing representative functional groups under standardized conditions (tetrahydrofuran, $25^{\circ}C)$ were examined in order to define the characteristics of the reagent for selective reductions. And the catalytic effect of lithium tetra-s-butoxyborate on the reaction of di-s-butoxyborane was also studied in order to increase the utility of this reducing system. Di-s-butoxyborane reacts only with simple aldehydes. However the addition of 2.5 mole % of lithium tetra-s-butoxyborate shows the tremendous rate enhancement of reaction for aldehydes, ketones, anhydrides, acid chlorides, lactones, and epoxides. This catalytic effect is assumed to in situ formation of lithium trialkoxyborohydride.

• Bulletin of the Korean Chemical Society
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• v.8 no.4
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• pp.313-318
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• 1987

The approximate rate and stoichiometry of the reaction of excess Thexylbromoborane-methyl sulfide, $ThxBHBr{\cdot}SMe_2,$ with selected organic compounds containing representative functional groups under standardized conditions (methylene chloride, $0^{\circ}C)$ were studied in order to characterize the reducing characteristics of the reagent for selective reductions. The selectivity of the reagent was also compared to the selectivity of thexylchloroborane-methyl sulfide. Thexylbromoborane appears to be a much milder and hence more selective reducing agent than thexylchloroborane. The reagent tolerates many organic functionalities. Thus, the reagent shows very little reactivity or no reactivity toward acid chlorides, esters, epoxides, amides, nitro compounds including simple olefins. However, this reagent can reduce aldehydes, ketones, carboxylic acids, nitriles, and sulfoxides. Especially the reagent reduces carboxylic acids including ${\alpha},{\beta}$ -unsaturated ones and nitriles to the corresponding aldehydes. In addition to that, thexylbromoborane shows good stereoselectivity toward cyclic ketones, much better than the chloro-derivative.

• Journal of Pharmaceutical Investigation
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• v.23 no.3
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• pp.155-163
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• 1993

Inclusion complexation of 1,7,21,27-tetraaza[7.1.7.1]paracyclophane (CPM 55) with 2,7-dihydroxynaphthalene (2,7-DHN) or 1,3-dihydroxynaphthalene (1,3-DHN) in pD 1.17 $DCl-D_2O$ solution was investigated by $^1H$ nuclear magnetic resonance spectroscopy (NMR) using 4,4'-dimethylaminodiphenylmethane (ACM 11) as an acyclic analog of CPM 55. In CPM 55-naphthalene derivative complex, alkyl protons located in the cavity of CPM 55 were shown to be subjected to anisotropic shielding and protons of naphthalene moiety shifted remarkably to upfield. However, in ACM 11-naphthalene derivative systems, chemical shifts for protons of both DHN compounds were not significant. The remarkable chemical shift changes suggested that the naphthalene moiety of 2,7-DHN or 1,3-DHN was included in the hydrophobic cavity of CPM 55 in aqueous solution. From the continuous variation plots of induced chemical shifts of 2,7-DHN, it was found that 2,7-DHN was included in the cavity of CPM 55 at 1:1 molar stoichiometry. Both computer simulation of a inclusion complex and strong upfield chemical shift changes of 2,7-DHN protons supported the conformation of pseudoaxial inclusion as the presumed geometry of the host-guest complex.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.2
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• pp.133-140
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• 2006

The performance of proton exchange membrane fuel cell was decreased by reverse voltage using fuel starvation. Performance decrease in local area could be affected by duration and extent of reverse voltage. Hydrogen and air stoichiometic ratio was used to find the experimental condition of abrupt voltage decrease. LabVIEW was used to make control logic of automatic load off system in preset voltage. Reverse voltage experiment was done down to -1.2 V at constant current condition. When fuel cell voltage was reached to preset voltage, electronic load was disconnected to make open circuit voltage for 1 minute. Fuel cell performance was checked every 5 cycle and the degree of performance decrease and/or recovery was estimated. Ohmic resistance and charge transfer resistance were increased and platinum surface area was reduced 41% after reverse voltage experiment.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2253-2259
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• 2011

The self-assembly of one novel organic complex based on chlorogenic acid (HCA) and 2,2'-bipyridine (2,2'-bipy) has been synthesized and characterized. The complex achieved by hydrogen-bonding interactions, adopted a 1:1 stoichiometry in a solid state. The proton transfer occurred from the carboxyl oxygen to the aromatic nitrogen atom to form salts CA${\cdot}$(2,2'-Hbipy), the 2,2'-Hbipy molecule individually occupies the pseudo-tetragonum that is formed with CA. In this paper, the interactions of CA${\cdot}$(2,2'-Hbipy) with bovine serum albumin (BSA) were studied by fluorescence spectrometry. For CA${\cdot}$(2,2'-Hbipy), HCA and 2,2'-bipy, the average quenching constants for BSA were $2.4384{\times}10^4$, $4.653{\times}10^3$, and $3.059{\times}10^3\;L{\cdot}mol^{-1}$, respectively. The mechanism for protein fluorescence quenching is apparently governed by a static quenching process. The Stern-Volmer quenching constants and corresponding thermodynamic parameters ${\Delta}$H, ${\Delta}$G and ${\Delta}$S were calculated. The binding constants and the number of binding sites were also investigated. The conformational changes of BSA were observed from synchronous fluorescence spectra.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.234-238
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• 2005

Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline $La_3Ga_5SiO_{14}$ wafer have been examined in $Cl_2/Ar$ inductively coupled plasma (ICP) discharges. Maximum etch rate ${\sim}1600{\AA}/min$ was achieved either at relatively high source power $({\sim}1000W)$ or high $Cl_2$ content conditions in $Cl_2/Ar$ discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• The Journal of Engineering Research
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• v.2 no.1
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• pp.133-138
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• 1997

The conventional process in synthesizing mullite powder required high temperature ($1300^{\circ}C$) and long chemical reaction time. Thus the combustion process was used to synthesize the mullite powder in order to reduce the reaction time and temperature. The mixture of metal nitrate, fine silica, and fuel was used as the redox compounds under various experimental conditions. The combustion fire in hot plate experiment in rich, lean and stoichiometry fuel does not produce mullite. However, the obvious mullite, small amount of alumina and cristobalite was observed in the $500^{\circ}C$ pre-heat treatment furnace experiment. The components such as silica, urea, aluminm nitrate should be stoichiometry in order to make a perfect mullite crystal.