• Bulletin of the Korean Chemical Society
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• 제8권4호
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• pp.304-310
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• 1987

The approximate rate and stoichiometry of the reaction of excess di-s-butoxyborane with selected organic compounds containing representative functional groups under standardized conditions (tetrahydrofuran, $25^{\circ}C)$ were examined in order to define the characteristics of the reagent for selective reductions. And the catalytic effect of lithium tetra-s-butoxyborate on the reaction of di-s-butoxyborane was also studied in order to increase the utility of this reducing system. Di-s-butoxyborane reacts only with simple aldehydes. However the addition of 2.5 mole % of lithium tetra-s-butoxyborate shows the tremendous rate enhancement of reaction for aldehydes, ketones, anhydrides, acid chlorides, lactones, and epoxides. This catalytic effect is assumed to in situ formation of lithium trialkoxyborohydride.

• Bulletin of the Korean Chemical Society
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• 제8권4호
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• pp.313-318
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• 1987

The approximate rate and stoichiometry of the reaction of excess Thexylbromoborane-methyl sulfide, $ThxBHBr{\cdot}SMe_2,$ with selected organic compounds containing representative functional groups under standardized conditions (methylene chloride, $0^{\circ}C)$ were studied in order to characterize the reducing characteristics of the reagent for selective reductions. The selectivity of the reagent was also compared to the selectivity of thexylchloroborane-methyl sulfide. Thexylbromoborane appears to be a much milder and hence more selective reducing agent than thexylchloroborane. The reagent tolerates many organic functionalities. Thus, the reagent shows very little reactivity or no reactivity toward acid chlorides, esters, epoxides, amides, nitro compounds including simple olefins. However, this reagent can reduce aldehydes, ketones, carboxylic acids, nitriles, and sulfoxides. Especially the reagent reduces carboxylic acids including ${\alpha},{\beta}$ -unsaturated ones and nitriles to the corresponding aldehydes. In addition to that, thexylbromoborane shows good stereoselectivity toward cyclic ketones, much better than the chloro-derivative.

• Journal of Pharmaceutical Investigation
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• 제23권3호
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• pp.155-163
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• 1993

Inclusion complexation of 1,7,21,27-tetraaza[7.1.7.1]paracyclophane (CPM 55) with 2,7-dihydroxynaphthalene (2,7-DHN) or 1,3-dihydroxynaphthalene (1,3-DHN) in pD 1.17 $DCl-D_2O$ solution was investigated by $^1H$ nuclear magnetic resonance spectroscopy (NMR) using 4,4'-dimethylaminodiphenylmethane (ACM 11) as an acyclic analog of CPM 55. In CPM 55-naphthalene derivative complex, alkyl protons located in the cavity of CPM 55 were shown to be subjected to anisotropic shielding and protons of naphthalene moiety shifted remarkably to upfield. However, in ACM 11-naphthalene derivative systems, chemical shifts for protons of both DHN compounds were not significant. The remarkable chemical shift changes suggested that the naphthalene moiety of 2,7-DHN or 1,3-DHN was included in the hydrophobic cavity of CPM 55 in aqueous solution. From the continuous variation plots of induced chemical shifts of 2,7-DHN, it was found that 2,7-DHN was included in the cavity of CPM 55 at 1:1 molar stoichiometry. Both computer simulation of a inclusion complex and strong upfield chemical shift changes of 2,7-DHN protons supported the conformation of pseudoaxial inclusion as the presumed geometry of the host-guest complex.

• 한국수소및신에너지학회논문집
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• 제17권2호
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• pp.133-140
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• 2006

The performance of proton exchange membrane fuel cell was decreased by reverse voltage using fuel starvation. Performance decrease in local area could be affected by duration and extent of reverse voltage. Hydrogen and air stoichiometic ratio was used to find the experimental condition of abrupt voltage decrease. LabVIEW was used to make control logic of automatic load off system in preset voltage. Reverse voltage experiment was done down to -1.2 V at constant current condition. When fuel cell voltage was reached to preset voltage, electronic load was disconnected to make open circuit voltage for 1 minute. Fuel cell performance was checked every 5 cycle and the degree of performance decrease and/or recovery was estimated. Ohmic resistance and charge transfer resistance were increased and platinum surface area was reduced 41% after reverse voltage experiment.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2253-2259
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• 2011

The self-assembly of one novel organic complex based on chlorogenic acid (HCA) and 2,2'-bipyridine (2,2'-bipy) has been synthesized and characterized. The complex achieved by hydrogen-bonding interactions, adopted a 1:1 stoichiometry in a solid state. The proton transfer occurred from the carboxyl oxygen to the aromatic nitrogen atom to form salts CA${\cdot}$(2,2'-Hbipy), the 2,2'-Hbipy molecule individually occupies the pseudo-tetragonum that is formed with CA. In this paper, the interactions of CA${\cdot}$(2,2'-Hbipy) with bovine serum albumin (BSA) were studied by fluorescence spectrometry. For CA${\cdot}$(2,2'-Hbipy), HCA and 2,2'-bipy, the average quenching constants for BSA were $2.4384{\times}10^4$, $4.653{\times}10^3$, and $3.059{\times}10^3\;L{\cdot}mol^{-1}$, respectively. The mechanism for protein fluorescence quenching is apparently governed by a static quenching process. The Stern-Volmer quenching constants and corresponding thermodynamic parameters ${\Delta}$H, ${\Delta}$G and ${\Delta}$S were calculated. The binding constants and the number of binding sites were also investigated. The conformational changes of BSA were observed from synchronous fluorescence spectra.

• 한국결정성장학회지
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• 제15권6호
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• pp.234-238
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• 2005

[ $Cl_2/Ar$ ] 유도결합 플라즈마(ICP)내의 플라즈마 조성, 이온 flux 및 이온 에너지가 $La_3Ga_5SiO_{14}$ 단결정 wafer의 식각속도, 표면 양상 및 화학량론적 조성에 미치는 영향을 조사하였다. 비교적 높은 ICP source power$({\sim}1000W)$ 또는 높은 $Cl_2$ gas 유량 비율 조건으로부터 최고 약 $1600{\AA}/min$의 실용적이고 조절이 용이한 식각속도를 확보하였다. 식각된 $La_3Ga_5SiO_{14}$ 표면은 식각 이전과 비슷하거나 더 낮은 표면 조도 특성을 나타내었으며 식각 공정 전, 후 표면의 화학량론적 조성에 있어서의 변화는 없는 것으로 조사되었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 공학논문집
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• 제2권1호
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• pp.133-138
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• 1997

Mullite 분말을 합성하는 제조공정에서 기존의 분말합성법은 $1300^{\circ}C$이상의 높은 온도와 긴 반응시간과 cost 면에서 비싸다는 문제점을 안고 있다. 따라서 본 연구에서는 비교적 제조공정이 간단하고 짧은 반응시간내에 낮은 온도에서 미립의 산화물계 분말을 합성할 수 있는 연소 합성법으로 mullite 분말을 합성하였다. 금속의 질산염, 미립의 $SiO_2$분말과 연료를 적정 mole비로 혼합하여 공정변수에 따라 mullite를 합성하고, 그의 물성을 조사하였다. Hot plate에서의 실험은 연료의 양에 관계없이 mullite는 합성되지 않았다. 그러나, $500^{\circ}C$ 열처리로 실험에서는 mullite와 약간의 alumina, cristobalite가 보였고, 특히 aluminum nitrate, silica, urea 각각의 조성이 화학양론비였을 때 거의 완벽한 mullite를 얻을 수 있었다.