• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.652-652
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• 2013

The conventional thermal chemical vapor deposition (CVD) setup for the graphene synthesis has mainly used convective heat transfer in order to heat a catalyst (e.g. Cu) up to $1,000^{\circ}C$. Although the conventional CVD has been so far widely accepted as the most appropriate candidate enabling mass-production of high-quality graphene, this method has stillremained under the standard for the commercialization largely due to the poor productivity arisen out of the required long processing time. Here, we introduced a fast and efficient synthetic route toward CVD-graphene. Unlike the conventional CVD using convection heat transfer, we adopted a CVD setup utilizing conduction heat transfer between Cu catalyst and rapid heating source. The high thermal conductive nature of Cu and the employed rapid heating source led to the remarkable reduction in processing timeas compared to the conventional convection based CVD (Fig. 1A), moreover, the synthesized graphene was turned out to have comparable quality to that synthesized by the conventional CVD (Fig. 1B). For the optimization of the conduction based CVD process, the parametric studies were thoroughly performed using through Raman spectroscopy and electrical sheet resistance measurement. Our approach is thought to be worth considerable in order to enhance productivity of the CVD graphene in the industry.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.60.2-60.2
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• 2011

A study of the non-linear optical properties of nanocrystal-Si embedded in SiO2 has been performed by using the z-scan method in the nanosecond and femtosecond ranges. Substoichiometric SiOx films were grown by plasma-enhanced chemical-vapor deposition(PECVD) on silica substrates for Si excesses up to 24 at/%. An annealing at $1250^{\circ}C$ for 1 hour was performed in order to precipitate nanocrystal-Si, as shown by EFTEM images. Z-scan results have shown that, by using 5-ns pulses, the non-linear process is ruled by thermal effects and only a negative contribution can be observed in the non-linear refractive index, with typical values around $-10-10cm^2/W$. On the other hand, femtosecond excitation has revealed a pure electronic contribution to the nonlinear refractive index, obtaining values in the order of 10-12 cm2/W. Simulations of heat propagation have shown that the onset of the temperature rise is delayed more than half pulse-width respect to the starting edge of the excitation. A maximum temperature increase of ${\Delta}T=123.1^{\circ}C$ has been found after 3.5ns of the laser pulse maximum. In order to minimize the thermal contribution to the z-scan transmittance and extract the electronic part, the sample response has been analyzed during the first few nanoseconds. By this method we found a reduction of 20% in the thermal effects. So that, shorter pulses have to be used obtain just pure electronic nonlinearities.

• Current Photovoltaic Research
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• 제3권3호
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• 한국진공학회지
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• 제7권4호
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• pp.306-313
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• 1998

전기적 착색 텅스텐산화물 박막이 전자비임 증착법에 의해 제작되었다. 전자비임에 의한 막의 퇴화에 미치는 영향이 논의되었다. 진공도 $10^{-4}$mbar에서 제작된 막이 사이클 내 구성 시험에 의한 결과, 가장 안정하였다. 황산 수용액에서 막의 퇴화는 진공도에 의존함을 보였다. 막두께는 산화와 환원전류 그리고 광학적 특성에 큰 영향을 미쳤다. 박막들 중에서 두께 5,000$\AA$의 시료가 사이클에 의한 내구성이 가정 안정하였다. 착색과 탈색이 반복되는 동안에 막의 퇴화의 근원은 막속에 이온의 누적 때문이며, 이로인해 산화와 환원전류가 감 소하였다. 티타늄의 양이 약10~15mol% 함유된 텅스텐산화물 박막은 착색과 탈색사이클이 반복되는 동안 최소한의 퇴화가 일어나서 가정 안정하였다. 사이클이 반복되는 동안 최소한 의 막 퇴화의 주 원인은 막속에 리튬이온의 포획위치 개수의 감소에 있었으며 이로인해 막 의 내구성이 증가하였다.

• 한국산학기술학회논문지
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• 제16권11호
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• pp.7433-7438
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• 2015

암모니아를 환원제로 사용하는 선택적 촉매 환원법에서 $V_2O_5/TiO_2$ 촉매를 사용하여 황산화물에 대한 비활성화 특성을 연구하였다. 반응온도와 황산화물 농도를 변경시키면서 촉매의 활성변화를 측정하였다. 촉매의 활성은 황산화물의 농도와 반응시간이 증가할수록 감소하였다. 또한 황산화물에 대한 촉매의 활성감소 정도는 반응온도 $250{\sim}300^{\circ}C$의 범위에서 반응온도가 증가할수록 크게 감소하였다. BET, XRD, SEM, TPD분석을 통해 비활성화된 촉매의 물리화학적인 특성을 조사하였다. 분석결과, 비활성화현상은 황산화물이 존재하는 상태에서 미반응 암모니아, 수분 등이 반응하여 황산암모늄이 생성되기 때문이다. 황산암모늄은 촉매의 기공을 막으며 활성물질에 침적된다.

• 대한기계학회논문집B
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• 제35권7호
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• pp.665-676
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• 2011

본 연구에서는 순수 물에 탄소나노튜브를 분산시킨 나노유체를 작동유체로 하여 $60^{\circ}C$ 에서 정사각형 구리 평면 히터를 이용하여 핵 비등 열전달계수와 임계 열유속을 측정하였다. 탄소나노튜브의 체적비는 0.0001%, 0.001%, 0.01%까지 변화시켜 실험을 수행하였다. 탄소나노튜브는 고분자 물질을 사용하여 분산시키지 않고 탄소나노튜브에 직접 산화처리를 하여 분산시켰다. 실험 결과 나노유체의 열전달계수는 순수 물과 비교해 모든 체적비에서 증가하였다. 산화 처리를 한 탄소나노튜브는 비등이 일어나는 동안 열 경계층 안에서 열전도도가 큰 탄소나노튜브가 침착되지 않고 열전달 표면에 자주 접촉함으로써 열 경계층을 교란시켜 비등 열전달을 촉진시키는 것으로 사료된다. 임계 열유속은 체적비 0.001%에서 순수 물의 결과에 비해 150%까지 증가하였다. 이는 열전달 표면에서 탄소나노튜브가 매우 얇게 침착되어 생긴 나노 막으로 인해 거대한 기포막의 형성이 억제되고 핵 비등이 높은 열유속에서도 지속되어 임계 열유속이 증가하는 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• 대한환경공학회지
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• 제28권3호
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• pp.249-256
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• 2006

함침법과 침적침전법으로 Cu-Mn 산화물 촉매를 제조하여 톨루엔 촉매 분해 반응을 조사하였다. 구리와 망간이 혼합됨으로 촉매활성을 증진 시킬 수 있음을 확인할 수 있었다. 또한 같은 화학적 조성으로 제조된 함침법보다 침적침전법에 의해 제조된 Cu-Mn 산화물 촉매에서 톨루엔 분해 반응 활성이 더 높았다. 침적침전법에 의해 제조된 촉매는 10일간의 장기 분석과 수분 첨가에 의한 톨루엔 분해 효율에 변화가 없었다. 촉매 특성 분석 결과에 기초하여 보면, 침적침전법은 촉매의 표면에 균일한 분산과 작은 크기의 입자를 제공하며 환원 능력을 증진시키는 것으로 판단된다. 따라서 침적침전법은 촉매의 성능을 향상 시키고 촉매의 안정성을 중진 시키는 것으로 생각 된다. 또한 Cu-Mn 산화물 촉매에서 톨루엔 분해 반응은 산화환원 반응에 의존하며 $Cu_{1.5}Mn_{1.5}O_4$ 스피넬 구조가 주요한 촉매 활성점으로 작용하는 것으로 추측된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.