• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.1-8
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• 1991

The electronic and magnetic structure of Fe overlayers on W(110) is determined by means of the all-electron local spin density full potential linearized augmented plane wave (FLAPW) method with a single slab approach. Charge and spin densities, magnetic moments, contact hyperfine fields, and layer projected density of states (LDOS) are presented. For bilayer Fe coverage, we find magnetic moments to be 2.90 and 2.30 ${\mu}_B$ for the surface and subsurface Fe layers, respectively, corresponding to a 18% enhancement of the total magnetization compared with the calculated bulk value (2.22${\mu}_B$);For monolayer coverage the moment is 2.56 ${\mu}_B$ which is enhanced by 16% compared to bulk. Unusual changes in the magnetic hyperfine interaction are found in going from a monolayer to a bilayer coverage. Comparison of the results to the theoretical ones of the clean Fe(110) to discuss the hybridization and the negative pressure effects. We discuss our results by comparing them to experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.92-92
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• 2014

Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• Journal of the Korean Geotechnical Society
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• v.19 no.2
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• pp.75-85
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• 2003

Laboratory model blast and in-situ rock blast tests were conducted to determine blast-induced stress wave propagation characteristics under different explosive types, different loading conditions and different mediums. Dynamic numerical approaches were conducted under the same conditions as experimental tests. Stress magnitudes at mid-point between two blast holes which were detonated simultaneously increased up to two times those of single hole detonation. The rise time of maximum stress in a decoupled charge condition was delayed two times that of a fully charged condition. Dynamic numerical analysis showed almost similar results to blast test results, which verifies the effectiveness of numerical approaches fur optimizing the tunnel blast design. Dynamic numerical analysis was executed to evaluate rock behavior and damage of the contour hole, the sloping hole adjacent to the contour hole in the road tunnel blasting pattern. The rock damage zone of the sloping hole from the numerical analysis was larger than that of the contour hole. Damage in the sloping hole can be reduced by using lower density explosive, by applying decoupled charge, or by increasing distance between the sloping hole and the contour hole.

• Journal of Korean Tunnelling and Underground Space Association
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• v.5 no.4
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• pp.337-348
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• 2003

The propagation mechanism of a detonation pressure with fully coupled charge is clarified and the blasting pressure propagated in rock mass is derived from the application of shock wave theory. The blasting pressure was a function of detonation velocity, isentropic exponent, explosive density, Hugoniot parameters, and rock density. Probabilistic distribution is obtained by using explosion tests on emulsion and rock property tests on granite in Seoul and then the probabilistic distribution of the blasting pressure is derived from the above mentioned properties. The probabilistic distributions of explosive properties and rock properties show a normal distribution so that the blasting pressure propagated in rock can be also regarded as a normal distribution. Parametric analysis was performed to pinpoint the most influential parameter that affects the blasting pressure and it was found that the detonation velocity is the most sensitive parameter. Moreover, uncertainty analysis was performed to figure out the effect of each parameter uncertainty on the uncertainty of blasting pressure. Its result showed that uncertainty of natural rock properties constitutes the main portion of blasting pressure uncertainty rather than that of explosive properties. In other words, since rock property uncertainty is much larger than detonation velocity uncertainty the blasting pressure uncertainty is more influenced by the former than by the latter even though the detonation velocity is found to be the most influencing parameter on the blasting pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.799-801
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• 1988

This paper was studied on the effects of Ca-La-Nb substitution and Zr/Ti ratio variation to Pb(Zr, Ti)$O_3$ system on structural, electrical, optical and sound level characteristics in order to develope the piezoelectric and electrooptic ceramic devices. Also the specimens were prepared by the two stage sintering technique. The molecular formular was X($CaO{\cdot}1/4La_{2}O_{3}{\cdot}1/4Nb_{2}O_{5}){\cdot}(1-X)Pb(Zr_{Y}Ti_{1-Y})O_{3}$(x=100X, y=100Y), and the variation of x was $6{\sim}12$, y was 60${\sim}$49 and second stage sintering time was 20${\sim}$40 hours. The experimental results obtained from this study are as follows : 1. The density was decreased, the grain size was increased according to increase of Ca-La-Nb substitution. 2. The crystal structure was rhombohedral in composition 6/60/40, and the crystal structure was tetragonal and cubic according to increase of Ca-La-Nb substitution. 3. The Ca substitution of PZT system enhanced the sintering property. The Pb site vacancy resulting from the substitution of La-Nb increased the dielectrical constant, the piezoelectric charge constant, the dielectric loss and decreased the coercive field. 4. The resistivity of PZT system which has the P type conduction mechanism increased according to substitution of La-Nb because of the substituent acting as donor. 5. The PZT ceramics varied from ferroelectric substance according to increase of Ca-La-Nb substituent. The coercive field and saturation remanent polarization decreased, and at last straight line according to increase of La-Nb substitution. 6. The amount of Ca-La-Nb substitution to improve the light transmittance of speciment was 10 mol%, the Zr/Ti ratio was 49/51, and the second stage sintering time was 40 hours. 7. According to Ca-La-Nb substitution, the specimens was to be transparent. The 7.5/51/49 specimen was suitable for transparent sound vibrator because it had 58% light transmittance (thick 0.2[mm], wave length 700[mm]) and 48% electromechanical coupling factor.

• Journal of the Korean Magnetics Society
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• v.20 no.5
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• pp.173-177
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• 2010

The electronic structure of charge-density-wave (CDW) system $CeTe_2$ has been investigated by using angle-resolved photoemission spectroscopy (ARPES). The clearly dispersive band structures are observed in the measured ARPES spectra, indicating the good quality of the single-crystalline sample employed in this study. The four-fold symmetric patterns are observed in the constant energy (CE) mappings, indicating the $2{\times}2$ lattice deformation in the Te(1) sheets. The observed CE images are similar to those of $LaTe_2$, suggesting that Ce 4f states have the minor contribution to the CDW formation in $CeTe_2$. This study reveals that the carriers near the Fermi level should have mainly the Te(1) 5p and Ce 5d character, that the Te(1) 5p bands contribute to the CDW formation, and that the Ce 5d bands cross the Fermi level even in the CDW state.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.211-216
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• 2008

The effects of Si impurity on electronic structures and magnetism of bcc Fe are investigated by using a first-principles method by considering spin-orbit coupling. In order to describe the Si impurity, a 27 atomic bcc Fe supercell has been considered. The Kohn-Sham equation was solved in terms of the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). The effects of spin-orbit coupling were calculated self-consistently by considering spin-diagonal terms based on second variation method. For the ferromagnetic (FM) state without considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.143{\mu}B$, while the magnetic moments of Fe atoms were calculated to be $2.214{\mu}B$, $2.327{\mu}B$, and $2.354{\mu}B$ in away from the Si atom, respectively. However, the FM state with considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.144{\mu}B$, which is not affected significantly by SOC, but the spin magnetic moments of Fe atoms were calculated $2.189{\mu}B$, $2.310{\mu}B$, and $2.325{\mu}B$, respectively, which are much reduced value compared to those of the FM state without SOC. Comparing the total charge density and spin density, those features are thought to be originated by the screening distortions of the Fe $t_{2g}$ orbital, which can be obtained by considering SOC.