• 한국강구조학회 논문집
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• 제25권4호
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• pp.347-357
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• 2013

최근, 콘크리트 충전강관 기둥(CFT)은 우수한 구조성능을 인정받아 현장적용이 활발하게 이뤄지고 있다. 한편 강재개발과 가격 상승으로 인해 단면을 효율적으로 사용하고자 하는 연구가 지속적으로 진행되고 있다. 본 연구실에서는 단면의 효율을 극대화 하기 위해 얇은 L형 플레이트 4개를 각형강관으로 형성한 단면을 제안한다. 이로 인해 강관 내부에 형성된 리브는 폭 중앙에 위치하고 있어 콘크리트와의 앵커역할이 가능하다. 또한 동일한 단면적을 갖는 일반 CFT기둥에 비해 우수한 좌굴내력과 변형성능이 발휘됨을 실험으로 평가되었다. 본 연구에서는 활용범위를 넓히고자 얇은 강판으로 조립된 신형상 기둥을 제안하며 구조적 성능을 재평가 하고자 한다. 실험 주요변수 폭두께비(b/t: 78,96,107) 이다. 실험결과 규준에서 제시하고 있는 폭두께비를 초과했음에도 내부에 설치된 리브의 앵커역할로 인해 충분한 내력을 발휘하며, 변형성능 향상에 유리한 것으로 분석되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Journal of Magnetics
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• 제17권2호
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• pp.153-157
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• 2012

This study evaluated the ability of Diffusion-Weight Image (DWI), which is one of pulse sequences used in MRI based on the T2 weighted images, to detect samples placed within phantoms according to their size. Two identically sized phantoms, which could be inserted into the breast coil bilaterally, were prepared. Five samples with different sizes were placed in the phantoms, and the T2 weighted images and DWI were obtained. The Breast 2 channel coil of SIEMENS MAGNETOM Avanto 1.5 Tesla equipment was used for the experiments. 2D T2 weighted images were obtained using the following parameters: TR/TE = 6700/74 msec, Thickness/gap = 5/1 mm, Inversion Time (TI) = 130 ms, and matrix = $224{\times}448$. The parameters of DWI were that TR/TE = 8100/90 msec, Thickness/gap = 5/1 mm, matrix = $128{\times}128$, Inversion Time = 185 ms, and b-value = 0, 100, 300, 600, 1000 s/mm. The ratio of the sample volume on DWI compared to the T2 weighted images, which show excellent ability to detect lesions on MR images, was presented as the mean b-value. The measured b-value of the samples was obtained: 0.5${\times}$0.5 cm=0.33/0.34 square ${\times}$ cm (103%), 1${\times}$1 cm=1.28/1.25 square ${\times}$ cm (102.4%), 1.5${\times}$1.5 cm = 2.28/2.67 square ${\times}$ cm (85.39%), 2${\times}$2 cm=3.56/4.08 square ${\times}$ cm (87.25%), and 2.5${\times}$2.5 cm=7.53/8.77 square ${\times}$ cm (85.86%). In conclusion, the detection ability by the size of a sample was measured to be over 85% compared to T2 weighted image, but the detection ability of DWI was relatively lower than that of T2 weighted image.

• 한국작물학회지
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• 제49권1호
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• pp.36-40
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• 2004

To observe and analysis ultra-microscopically barley aleurone cell surface, atomic force microscope (AFM) was used. Seed coat of early maturing germplasm, eam9, was dehulled and scanned by non-contact mode. We have obtained the high resolution topographic 3-dimensional image of barley aleurone layer with high resolution. These images showed the membrane proteins in barley aleurone cell. One channel protein and numerous peripheral or integral proteins were detected in a area of 100 $\mu\textrm{m}^2$. Furthermore, we found that their widths were ranged from 50 to 750nm and lengths from 0 to 66 $\mu\textrm{m}$. The thickness of aleurone layer was measured by scanning electron microscope. The thickness at early developmental stage was about 16 and then the aleurone cell enlarged upto 57 $\mu\textrm{m}$${\mu}{\textrm}{m}$ at least until 42 days after anthesis. In this study, we firstly reported on the ultrastructural AFM analysis of living aleurone cell as a biological specimen. It was clearly suggested that AFM will become an powerful tool for probing both the structural properties of biological samples.

• 대한디지털의료영상학회논문지
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• 제17권1호
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• pp.33-41
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• 2015

This study attempts to examine the clinical usefulness of High b-value DWI (diffusion weighted imaging) for brain tumors with an edema. Subjects were seven patients selected from 65 patients who received an MRI scan for suspected encephalopathy and confirmed diagnosis at our hospital from February to July 2015 (male: 7, average age : 66 years old). As test equipment, 3.0T MR System (ACHIEVA Release, Philips, Best, The Netherlands) and 8Channel SENSE Head Coill were used. DWI checks on the use of the variable TR 5460ms, TE 132ms, Slice Thickness 4mm, gap 1mm, Slice number 29 is, 3D T1WI is TR 8.4ms, TE 3.9ms, matrix size $240{\times}240$, Slice can set 180 piecesIt was. b value of 0, 1,000, 2,000 s/mm2 with DWI acquisition and 3D T1WI enhancement five minutes after the Slice Thickness 3mm, gap 0mm to reconstruct the upper face axis (MPR TRA CE) was. As for the experiment, in b-value 1,000 and 2,000 images, SNR and the lesion at the lesion site and CNR in the normal site opposite to the lesion are measured. WW(window width) and WL(window level) are made equal in MRICro software, and the volume of the lesion is measured from each of b-value and MPR TRA CE image. Using SPSS ver. 1.8.0.0 Mann Whitney-test was analyzed for SNR and CNR, while Kruskal-Wallis test was analyzed for volume.

• Nuclear Engineering and Technology
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• 제42권5호
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• pp.568-575
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• 2010

Flow Accelerated Corrosion is an active degradation mechanism of CANDU feeder. The tight bend downstream to Gray loc weld connection, close to reactor face, suffers significant wall thinning by FAC. Extensive in-service inspection of feeder wall thinning is very difficult because of the intense radiation field, complex geometry, and space restrictions. Development of a knowledge-based inspection program is important in order to guarantee that adequate wall thickness is maintained throughout the whole life of feeder. Research results and plant experiences are reviewed, and the plant inspection databases from Wolsong Units One to Four are analyzed in order to support developing such a knowledge-based inspection program. The initial thickness before wall thinning is highly non-uniform because of bending during manufacturing stage, and the thinning rate is non-uniform because of the mass transfer coefficient distributed non-uniformly depending on local hydraulics. It is obvious that the knowledge-based feeder inspection program should focus on both fastest thinning locations and thinnest locations. The feeder wall thinning rate is found to be correlated proportionately with QV of each channel. A statistical model is proposed to assess the remaining life of each feeder using the QV correlation and the measured thicknesses. W-1 feeder suffered significant thinning so that the shortest remaining life barely exceeded one year at the end of operation before replacement. W-2 feeder showed far slower thinning than W-1 feeder despite the faster coolant flow. It is believed that slower thinning in W-2 is because of higher chromium content in the carbon steel feeder material. The average Cr content of W-2 feeder is 0.051%, while that value is 0.02% for W-1 feeder. It is to be noted that FAC is reduced substantially even though the Cr content of W-2 feeder is still very low.

• 한국지형학회지
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• 제27권1호
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• pp.33-45
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• 2020

A number of unconsolidated deposits, consisting of a layer of gravels and silt, are found in Dangjeong-ri, Seocheon-gun in the western coast. From below in the stratigraphic sequence, the gravel layer ranging up to a maximum thickness of about 2 meters is interpreted as being formed by fluvial processes of an old channel (Dangjeong S.), and the overlying silt or sandy silt layer of 2 to 3 thickness meters is assumed to be emerged paleo-tidal sediments which was deposited in low tidal-energy environments. As the results of rock surface IRSL datings, the depositional ages of gravels are confirmed as ca. 78,000 ~ 83,000 years BP, indicating that the layer was formed in response to a high-stand sea level of MIS 5a along the Dangjeongcheon estuary. It is presumed that the relative height of 4.5 meter between the altitude of the stream bed (9.5 m) and the altitude of the bedrock boundary in the gravel layer (14 m) indicates the uplift amount since deposition. Paleo-sedimentary environments and an altitude of paleo-shoreline in the study area will be discussed with additional age dating focused on the silt layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 비파괴검사학회지
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• 제28권2호
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• pp.131-136
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• 2008

정재초음파를 이용하면 유체에 잠겨 있거나 유체를 따라서 흐르는 미세 입자의 조작이 가능하다. 정재초음파 장이 입자에 힘을 작용하여 입자를 음압마디 또는 반음압마디로 이동시킨다. 본 연구에서는 정재초음파의 주파수를 조정함으로써 유동 중 미세 입자의 위치를 제어하는 방법을 제안하고자 한다. 이를 위해 먼저 수침형 초음파 트랜스듀서를 이용하여 폭 수 밀리미터의 미세 채널을 가지는 정재초음파 발생시스템을 구성하였다. 제안한 발생시스템을 이용하여 주파수 2 MHz부터 2.5 MHz까지 영역에서 정재초음파 장을 발생시키고, 물을 따라 흐르는 수 마이크로미터 내외의 탄화규소 입자가 음압 마디로 잘 이동함을 확인하였다. 이때, 미세 채널의 폭과 주파수가 입자의 거동에 미치는 영향을 관찰하였으며, 주파수가 미세입자의 이동 위치를 결정하는 중요한 파라미터임을 확인하였다. 결과적으로, 초음파의 주파수를 조정함으로써 입자의 이동 위치를 제어할 수 있음을 실험을 통해 확인하였으며 최대 범위는 약 261 마이크로미터이다. 본 연구로부터 유체내의 입자 조작에 있어서 정재초음파의 다양한 응용 가능성을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.