• Title/Summary/Keyword: Channel Charge

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Electrical/Optical Characterization of Zn-Sn-O Thin Films Deposited through RF Sputtering

  • Park, Chan-Rok;Yeop, Moon-Su;Lee, Bo-Ram;Kim, Ji-Soo;Hwang, Jin-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.360-360
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    • 2012
  • Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

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A Study on the Factory of Design Influencing Purchase Decision-making Factors at Social Commerce Sites (소셜커머스 사이트의 구매결정 요인에 영향을 미치는 디자인 요인)

  • Park, Kiho
    • Journal of Digital Convergence
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    • v.10 no.9
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    • pp.101-110
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    • 2012
  • In recent days, lots of social commerce newly emerged business types of e-commerces are on the basis of social network. Therefore social commerce with social network might be powerful communication channel among customers and has suggested new paradigm in transaction model on the internet. In general, major roles of social commerce sites are to promote transaction with high discount rate and/or lots of event and to activate markets of local area. As characteristics of social commerce such as dynamic, rapid, and open, this research was assumed that design factors of sites that are different from existing e-commerce sites might be influential elements in decision making of purchase. This research is to empirically investigate which factors affect purchase decision making behaviors for 20s respondents who are major users of social commerce services. As a result major factor, easy-to-use, affecting decision making factors was identified and this result can give implication to researchers and persons in charge of fields who have interests in commerce site design and upgrade.

A Word Line Ramping Technique to Suppress the Program Disturbance of NAND Flash Memory

  • Lee, Jin-Wook;Lee, Yeong-Taek;Taehee Cho;Lee, Seungjae;Kim, Dong-Hwan;Wook-Ghee, Hahn;Lim, Young-Ho;Suh, Kang-Deog
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.2
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    • pp.125-131
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    • 2001
  • When the program voltage is applied to a word line, a part of the boosted channel charge in inhibited bit lines is lost due to the coupling between the string select line (SSL) and the adjacent word line. This phenomenon causes the program disturbance in the cells connected to the inhibited bit lines. This program disturbance becomes more serious, as the word line pitch is decreased. To reduce the word line coupling, the rising edge of the word-line voltage waveform was changed from a pulse step into a ramp waveform with a controlled slope. The word-line ramping circuit was composed of a timer, a decoder, a 8 b D/A converter, a comparator, and a high voltage switch pump (HVSP). The ramping voltage was generated by using a stepping waveform. The rising time and the stepping number of the word-line voltage for programming were set to $\mutextrm{m}-$ and 8, respectively,. The ramping circuit was used in a 512Mb NAND flash memory fabricated with a $0.15-\mutextrm{m}$ CMOS technology, reducing the SSL coupling voltage from 1.4V into a value below 0.4V.

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Design of a Wide-band Acousto-Optical Spectrometer for Radio Astronomical Observations (우주전파 관측을 위한 광대역 음향광학 전파분광기 설계)

  • 임인성;민경일;오승엽
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.6
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    • pp.1009-1017
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    • 2001
  • The acousto-optical spectrometer is designed by using 1 GHz bandwidth acousto-optic deflector for radio signal analysis. This system is a high resolution wide band spectrometer which uses I GHz bandwidth and a total of 2,048 channel charge coupled device. When we measured the spectrums of signals deflected by acousto-optical spectrometer, we confirmed the stability of the total system by repetitive observations of the same frequency, and each part of the system worked well. We installed this system onto 60 cm radio telescope, and observed 12CO(J= 1 ∼0) emission lines around CRL 2688, IRC 10216 and NGC 5005 Galaxy center. We could observe effectively very narrow band width radio spectrum as well as wide band radio spectrum. We also confirmed high sensitivity and resolution in observation of 12CO(J-10) omission line of NGC 5005 Galaxy center which is a weak signal.

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Transparent Nano-floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) Pyrochlore Thin Films

  • Jeong, Hyeon-Jun;Song, Hyeon-A;Yang, Seung-Dong;Lee, Ga-Won;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.1-20.1
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    • 2011
  • The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

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Photocatalytic Activity of Hierarchical N doped TiO2 Nanostructures

  • Naik, Brundabana;Kim, Sun Mi;Jung, Chan Ho;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.669-669
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    • 2013
  • Hierarchical N doped TiO2 nanostructured catalyst with micro, meso and macro porosity have been synthesized by a facile self-formation route using ammonia and titanium isopropoxide precursor. The samples were calcined in different calcination temperature ranging from $300^{\circ}C$ to $800^{\circ}C$ at slow heating rate ($5^{\circ}C$/min) and designated as NHPT-300 to NHPT-800. $TiO_2$ nanostructured catalyst have been characterized by physico-chemical and spectroscopy methods to explore the structural, electronic and optical properties. UV-Vis diffuse reflectance spectra confirmed the red shift and band gap narrowing due to the doping of N species in TiO2 nanoporous catalyst. Hierarchical macro porosity with fibrous channel patterning was observed (confirmed from FESEM) and well preserved even after calcination at $800^{\circ}C$, indicating the thermal stability. BET results showed that micro and mesoporosity was lost after $500^{\circ}C$ calcination. The photocatalytic activity has been evaluated for methanol oxidation to formaldehyde in visible light. The enhanced photocatalytic activity is attributed to combined synergetic effect of N doping for visible light absorption, micro and mesoporosity for increase of effective surface area and light harvestation, and hierarchical macroporous fibrous structure for multiple reflection and effective charge transfer.

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Numerical Simulation of the Sea Water Circulation Characteristics according to the development phases of Busan Port (부산 북항 개발전후의 해수순환특성 수치모의)

  • Moon, Yeong-Ki;Yoo, Chang-Il;Yoon, Han-Sam
    • Proceedings of KOSOMES biannual meeting
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    • 2009.06a
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    • pp.89-94
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    • 2009
  • This study aims to examine the the characteristics if the sea water circulation in related to the change of the water exchange rate according to the the development phases of Busan Port. To clarify the characteristics, the water exchange caused by construction if new-port and river discharge conditions was examined by the numerical experiments using the Lagrangian particle tracking model based on 2-D shallow water equation. This study deals with the charge of flow field and water exchange after redevelopment using numerical simulation technique, based on the field observation and 4 rivers discharge flow. As a result if numerical simulation, Variation if current velocity in Busan North Port is almost nothing before and after construction. Water exchange of channel in area of redevelopment is a little. Futhermore, the tidal exchange had a tendency to be small both before and after redevelopment by 60%.

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Nitric Oxide Synthase Mediates Carbon Monoxide-Induced Stimulation of L-type Calcium Currents in Human Jejunal Smooth Muscle Cells

  • Lim, In-Ja;Yun, Ji-Hyun;Kim, Seung-Tae;Myung, Soon-Chul;Kim, Tae-Ho;Bang, Hyo-Weon
    • The Korean Journal of Physiology and Pharmacology
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    • v.8 no.3
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    • pp.161-165
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    • 2004
  • Exogenous carbon monoxide (0.2%) increases L-type calcium $(Ca^{2+})$ current in human jejunal circular smooth muscle cells. The stimulatory effect of carbon monoxide (CO) on L-type $Ca^{2+}$ current is inhibited by pre-application of L-NNA, a classical competitive inhibitor of nitric oxide synthase (NOS) with no significant isoform selectivity (Lim, 2003). In the present study, we investigated which isoform of NOS affected CO induced stimulation of L-type $Ca^{2+}$ current in human jejunal circular smooth muscle cells. Cells were voltage clamped by whole-cell mode patch clamp technique, and membrane currents were recorded with 10 mM barium as the charge carrier. Before the addition of CO, cells were pretreated with each inhibitor of three NOS isoforms for 15 minutes. CO-stimulating effect on L-type $Ca^{2+}$ current was partially blocked by N-(3-(Amino-methyl) benzyl) acetamidine 2HCl (1400W, an iNOS inhibitor). On the other hand, 3-bromo-7-nitroindazole (BNI, a nNOS inhibitor) or $N^5-(1-Iminoethyl)-L-ornithine$ dihydrochloride (L-NIO, an eNOS inhibitor) completely blocked the CO effect. These data suggest that low dose of exogenous CO may stimulate all NOS isoforms to increase L-type $Ca^{2+}$ channel through nitric oxide (NO) pathway in human jejunal circular smooth muscle cells.

A evaluation of internal radial direction's distribution of MHD generator using shock tube (충격파관을 이용한 MHD발전기 내부 반경방향 분포의 평가)

  • 배철오;안병원;김윤식;이성근;박영산
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.2
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    • pp.493-503
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    • 2000
  • There are two types of generators in the MHD generation : linear type Faraday and disk type hall generator. In this paper, it is experimented disk type hall generator. Disk type generator is driven by shock tube that compresses working gas isentropically in a very short time. As a working gas, helium gas seeded with cesium is used. it is difficult to confirm the whole condition thorough oかy experiment because the things happened in MHD generator is very complex. Furthermore we can't how exactly what happen at the inside of generator's channel because the time of generation is very short and working gas flows out very high speed. Expecially it is almost impossible to measure the things occurred in the boundary layer using MHD generation experimental equipment driven shock uk. With above reasons, to know certainly how the several values happened inside disk MHD generator charge, some graphs were drawn linearly through calculation using measured experimental data. For the more, other calculated results which can't be obtained by only experiment are considered in this paper. And these calculated results are compared to experiment data how exactly done the calculation.

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Analysis of Subthreshold Swing for Double Gate MOSFET Using Gaussian Function (가우스함수를 이용한 DGMOSFET의 문턱전압이하 스윙분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Lee, Jae-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.681-684
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    • 2011
  • In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

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