• 한국결정성장학회지
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• 제23권2호
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• pp.108-113
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• 2013

$CuInSe_2$(CIS) chalcopyrite 물질은 고효율 박막 태양전지를 위한 광흡수층의 물질로 매우 잘 알려져 있다. 최근 태양광 산업의 흐름은 안정적인 재료 개발과 가격 경쟁력 있는 태양전지를 위한 효율적인 제조 공정을 일치시키는 것이다. 저가의 CIS 광흡수층 위해 다양한 방법으로 제조를 시도하였고, 본 논문에서는 CIS 광흡수층을 저가형으로 제조를 위해 상용화되는 6 mm pieces를 사용하여 high frequency ball milling과 cryogenic milling을 이용해 CIS 나노입자를 얻었다. 그리고, CIS 광흡수층은 불활성 분위기의 glove box 안에서 milling된 나노입자를 사용하여 paste coating법으로 제조하였다. Chalcopyrite CIS 박막은 기판온도 550도에서 30분간 셀렌화 한 후 성공적으로 제조되었으며, Al/ZnO/CdS/CIS/Mo 구조의 CIS 태양전지는 evaporation, sputtering 및 chemical bath deposition(CBD) 등 다양한 증착 방법으로 각각 제조하였다. 결론적으로, 나노입자를 이용한 CIS 태양전지 전기적 변환효율은 1.74 %를 얻었으며, 개방전압(Voc)는 29 mV, 합선전류밀도(Jsc)는 35 $mA/cm^2$, 그리고 충진율(FF)은 17.2 %였다. 나노입자 CIS 광흡수층은 energy dispersive spectroscopy(EDS), x-ray diffraction(XRD) 그리고 high-resolution scanning electron microscopy(HRSEM) 등으로 특성 분석을 하였다.

• Transactions on Electrical and Electronic Materials
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• 제4권1호
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• 자원환경지질
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• 제28권6호
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• pp.541-551
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• 1995

The Yeongdeog gold-silver deposits at Jipum, Gyeongsangbugdo, is of a middle Paleogene $(45.52{\pm}1.02Ma)$ vein type, and is hosted in shale and sandstone of Cretaceous age. Based on mineral paragenesis, vein structure and mineral assemblages, the ore mineralization can be divided into two distinct depositional stages. The early stage is associated with base-metals such as pyrite, arsenopyrite (27.99~30.99 at%), hematite, rutile, pyrrhotite, sphalerite (10.53~18.42 FeS mole%), chalcopyrite and galena with wallrock alteration such as chlorite, sericite and pyrite. The late stage is characterized by the Au-Ag mineralization such as electrum, Ag-bearing tetrahedrite, freibergite, pyrargyrite, unidentified mineral, pyrite, sphalerite (1.08~5.57 FeS mole%), chalcopyrite and galena. Fluid inclusion data indicate that fluid temperatures and salinities range from 343 to $227^{\circ}C$ and from 8.3 to 5.7 wt% eq. NaCl in early stage, respectively. Temperatures and salinities of NaCl eq. wt% range from 299 to $225^{\circ}C$ and from 12.9 to 4.3 in late stage, respectively. They suggest that complex cooling histories were occured by the mixing of the fluids. Sulfur fugacity $(-logfs_2)$ deduced by mineral assemblages and composition ranges from 8.3 to 14.7 atm. in early stage, and from 8.8 to 14.5 atm. in late stage. It suggests that the mineralization was related to decrease of temperature in early stage and fluctuations of $fS_2$ with decrease of temperature in late stage. Sulfur and oxygen isotope compositions are 4.48~5.60‰ and 9.25~10.8% in early stage, and late stage is 4.84~7.00‰ and 5.7‰, respectively. It indicated that hydrothermal fluids may be magmatic origin with some degree of mixing of another water during paragenetic time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.92-96
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• 2002

Hot wall epitaxy 방법을 이용하여 chalcopyrite 구조를 가진 고품질의 $AgInS_{2}$ 박막을 성장 하였다. 광전류 스펙트럼을 측정한 결과， 30K에서 300K까지는 단지 A 와 B 두개의 봉우리가 관측되었고 반면에 10K에서는 A,B,C 세 개의 봉우리가 관측되었다. 이때 이들 봉우리들은 band-to-band 전이에 기인하는 것으로 관측되었다. 광전류 측정으로부터 $AgInS_{2}$의 가전자대 갈라짐이 측정되었고 이로부터 10k에서 결정장에 의한 갈라짐 $D_{cr}$과 스핀궤도에 의한 갈라짐 $D_{so}$은 각각 0.150eV와 0.009eV로 관측되었다. 또한 에너지 밴드갭의 온도 의존성 $E_{g}(T)$에 대하여 연구하였고 성장된 $AgInS_{2}$ 박막의 에너지 밴드갭은 1.868eV 임을 알았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.267-267
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• 2009

Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.442-443
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• 2009

We prepared and characterized particle based CIGS thin film using a thermal evaporator. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.160-162
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• 2009

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 전기학회논문지P
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• 제51권3호
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.377-377
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• 2010

The $AgInS_2$ epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. After the as-grown $AgInS_2$/GaAS was annealed in Ag-, S-, and In-atmosphere, the origin of point defects of the $AgInS_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or acceptors type