• Title/Summary/Keyword: Chalcopyrite

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Optical Properties of Undoped and Co-doped $CuAlGeSe_4;Co^{2+}$ Crystals ($CuAlGeSe_4$$CuAlGeSe_4;Co^{2+}$ 결정의 광학적 특성)

  • 신동운;오석균;김미양;현승철;김화택;김용근
    • Journal of the Korean Vacuum Society
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    • v.3 no.2
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    • pp.227-233
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    • 1994
  • CuAlGeSe4 및 CuAlGeSe4 ; Co2+ 결정을 고순도의 성분원소로부터 합성하고 서냉법으로 결정을 성장시켰다. 이들결정은 chalcopyrite 결정구조를 갖고 있으며 직접전이형 energy gap 구조를 갖고 286K에서 energy gap은 CuAlGeSe4 결정의 경우는 2.394eV이며 CuAlGeSe4 ; Co2+ 결정의 경우는 2.302 eV로 주어졌다. CuAlGeSe4 : Co2+ 결정에서 cobalt에 의한 불순물 광흡수 peak들은 12243, 7002, 3890 cm-1에서 나타났으며 이 peak들은 CuAlGeSe4 : Co2+ 결정의 Td symmetry site에 위치한 Co2+ ion의 energy 준위사이의 전자전이에 의한 optical absorption임을 규명했다.

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Growth and optical properties of undoped and Co-doped CdS single crystals (CdS 및 CdS:Co2+ 단결정의 성장과 광학적 특성)

  • Oh, Gum-kon;Kim, Nam-oh;Kim, Hyung-gon;Hyun, Seung-cheol;Park, hjung;Oh, Seok-kyun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.3
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    • pp.137-141
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    • 2002
  • CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

Origin of Point Defects in $AgInS_2$ Epilayer Obtained From Photoluminescence

  • You, San-Ha;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.377-377
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    • 2010
  • The $AgInS_2$ epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. After the as-grown $AgInS_2$/GaAS was annealed in Ag-, S-, and In-atmosphere, the origin of point defects of the $AgInS_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or acceptors type

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Binding energy study from photocurrent signal inphotoconductive a $ZnIn_2S_4$ thin films

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.380-380
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    • 2010
  • The chalcopyrite $ZnIn_2S_4$ epilayers were grown on the GaAs substrate by using a hot-wall epitaxy (HWE) method. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2S_4$ have been estimated to be 0.1541 eV and 0.0129 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the $\Gamma_5$ states of the valence band of the $ZnIn_2S_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$, and $C_1$-exciton peaks for n = 1. Also, we obtained the $A_{\infty^-}$ and B-exciton peaks from the PC spectrum at 293 K.

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Reactive Sputtering Process for $CuIn_{1-x}Ga_xSe_2$ Thin Film Solar Cells

  • Park, Nae-Man;Lee, Ho Sub;Kim, Jeha
    • ETRI Journal
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    • v.34 no.5
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    • pp.779-782
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    • 2012
  • $CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

Geology and Ore Deposits of Yeonhwa Mine (연화광산(蓮花鑛山)의 지질광상(地質鑛床))

  • Han, Kap Soo
    • Economic and Environmental Geology
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    • v.2 no.3
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    • pp.47-57
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    • 1969
  • The Yeonhwa Lead and Zinc Mine is located in northern part of Kyeongsang-Buk-Do, Korea, and is economically most important mine because it produces most part of the output of lead and zinc minerals in the country. Ore deposits of the mine are localized in the Pungchon Formation and several limestone seams of upper Myobong Formation in Cambrian Age. Ore solution ascended along the fractures of N-S, NE-SW or NW-SE trends and along slate and limestone boundary, and then replaced selectively limestone to make ore bodies. Skarn minerals are consisted of hedenbergite, diopside, and main sulfide mineral orebodies are composed of galena, zincblende, pyrrhotite, pyrite and a minor amounts of arsenopyrite and chalcopyrite. Metal ratio, ${\rho}_{Pb}={\frac{Pb(%)}{Pb(%)+Zn(%)}}{\times}100$, illustrates the zona I arrangements of some ore bodies. It will be inferred the flow trending of ore solution and the process reaction with adjacent country rocks. The sub-divided formations of the Pungchon limestone and Myobong slate are very useful as a criteria for detecting probable ore location. Rhodochrosite veins are good evidence for searching of ore location, especially on Pb-rich ore bodies.

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Syntheses of Cu-In-Ga-Se/S nano particles and inks for solar cell applications

  • Jung, Duk-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.295-295
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    • 2010
  • Nanoparticles of the compound semiconductor, Cu(In, Ga)Se2 (CIGS), were synthesized in solution under ambient pressure below $100^{\circ}C$ and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectroscopy and energy-dispersive X-ray (EDX) analyses. These materials have chalcopyrite crystal structures and the particle sizes less than 100 nm. Synthetic conditions were studied for the crystallized CIGS nanoparticles formation to prevent from side products of Cu2Se, Cu2-xSe, and CuSe etc. The single phase CIGS nanoparticles were applied to coating of thin films photovoltaic cells. The electro deposition of CIGS thin films is also a good non-vacuum technology and under investigation. In aqueous solutions, the different chemical compositions of CIGS thin films were obtained, depending on pH, concentration of starting materials and deposition potentials. The surface morphology of the prepared CIGS thin films depends on the complexing ligands to the solutions during the electrochemical deposition.

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Optical Properties of $CuAl_{1-x}Ga_xSe_2$ and $CuAl_{1-x}Ga_xSe_2:Co^{2+}$ Single Crystals ($CuAl_{1-x}Ga_xSe_2$$CuAl_{1-x}Ga_xSe_2 : Co^{2+}$ 단결정의 광학적 특성)

  • 진문석;김화택
    • Journal of the Korean Vacuum Society
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    • v.3 no.3
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    • pp.346-354
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    • 1994
  • 삼원화합물 반도체 CuAlSe2 및 CuGaSe2 단결정의 solid solution 인 CuAl1-xGaxSe2 및 cobalt를 2.0 mol% 첨가한 CuAl1-xGaxSe2 : Co2+ 단결정을 iodine을 수송물질로 사용한 화학수송법으로 성장시켰 다. source material로는 CuAl1-xGaxSe2 의 화학조성비에서 Se를 3.0mol% 과잉으로 첨가하여 합성한 ingot를 사용하였으며 불순물이 첨가된 CuAl1-xGaxSe2:Co2+ 단결정성장시에는 source ma-terial 에 cobalt 분말을 2.0mol% 첨가하였다. X-선 회절무늬로부터 성장된 단결정들이 chalcopyrite 결정구조를 하고 있음을 확인하였으며 격자상수를 구하였다. 광흡수 spectra 측정으로부터 성장된 단결정에서 나타 는 cobalt 불순물에 의한 광흡수 peak가 Td 대칭점에위치한 Co2+ 이온의 에너지 준위들간 전자전이에 의해 나타남을 규명하였다.

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Genesis of the Copper Deposits in Goseong District, Gyeongnam Area (경남고성지역(慶南固城地域) 동광상(銅鑛床)의 성인(成人)에 관한 연구(硏究))

  • Park, Hee-In;Choi, Suck Won;Chang, Ho Wan;Lee, Min Sung
    • Economic and Environmental Geology
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    • v.16 no.3
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    • pp.135-147
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    • 1983
  • The copper deposits in Goseong district, Gyeongnam area are fissure filled copper veins emplaced on Cretaceous Goseong formation and andesitic rocks. Occurrence of ore veins and mineral paragenesis suggest a division of the hydrothermal mineralization into three stages: stage 1, deposition of arsenopyrite, pyrite, quartz, chlorite and epidote; stageII, deposition of pyrite, chalcopyrite, galena, sphalerite, electrum, pyrargyrite, tetrahedrite, silver sulfosalt minerals, quartz, chlorite, sericite and miner amount of calcite; stage III, formation of barren calcite veins. Filling temperature of fluid inclusions in quartz of stage II, range from 260 to 360 C and salinities from 6.2 to 13.6 weight percent NaCi equivalent.

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Polymorphic Variations of Pyrrhotite as related to Tungsten-Tin-Copper Mineralization at the Ohtani Mine, Japan (일본(日本) 대곡광산산(大谷鑛山産) Pyrrhotite의 성질(性質))

  • Kim, Moon Young;Nakamura, Takeshi
    • Economic and Environmental Geology
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    • v.19 no.1
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    • pp.57-66
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    • 1986
  • The ore deposit of the Ohtani mine is one of representatives of plutonic tungsten-tin veins related genetically to acidic magmatism of Late Cretaceous in the Inner zone of Southwest Japan. Based on macrostructures of vein filling, three major mineralization stages are distinguished by major tectonic breaks. The constituents of ore minerals are scheelite, cassiterite, chalcopyrite, pyrrhotite, sphalerite, with small amounts of cubanite, stannite, galena, native bismuth, bismuthinite, arsenopyrite and pyrite. The relationship between the polymorphic variations of pyrrhotite and the kinds of the associated characteristic of ore mineral, in relation with hypogene mineralization, has been demonstrated. Pyrrhotite of stage I is predominantly of the hexagonal phase (Hpo>Mpo). Pyrrhotite of stage II is mainly of the monoclinic phase ($Hpo{\ll}Mpo$). Pyrrhotite of stage III is a single monoclinic phase ($Hpo{\ll}Mpo$). The compositions of the hexagonal pyrrhotite decrease in Fe content ranging from 47.44 atom % Fe in stage I to 46.88 atom % Fe in stage III.

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