• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.92-96
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• 2002

A silver indium sulfide $(AgInS_{2})$ epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-ta-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$, and the spin orbit splitting, $\Delta_{so.}$ have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}(T)$, was determined.

• Economic and Environmental Geology
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• v.21 no.3
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• pp.287-307
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• 1988

The Cheongju gold-silver mine is located at approximately $36^{\circ}28^{\prime}$north latitude and $127^{\circ}31^{\prime}$ east longitude in the Cheongju City of the Chung cheong bug Do, South Korea. Gold-Silver bearing hydrothermal quartz veins, occur in Cheongju Granit of Jurassic age. K-Ar isotope data for sericite in quartz vein indicate that the Au-Ag mineralization took place in early Cretaceous ($97.5{\pm}2.18$ MA. Park, et ai, 1986). Three stage of mineralization recognized anre, from early to later, (I) Sulide stage: pyrite, arsenopyrite, pyrrhotite (Hpo), sphalerite, chalcopyrite, electrum and quartz (II) Electrum stage: pyrite, sphalerite, galena, chalcopyrite, electrum and quartz. (III) Silver mineral stage: pyrite, marcasite, pyrrhotite (Mpo), sphalerite, galena, electrum, native silver argentite, fluorite, calcite and quartz. In this paper, mode of occurrences and chemical compositions of electum and native silver have been investigated by means of microscope and EPMA. Electron probe microanalysis shows that an individual grain of electrum is almost homogeneous in composition. Silver content of electrum ranges from 44.7-67.1 atom.%. Gold content of native silver ranges below 0.2 atom. %. Vicker's hardness number (VHN) of electrum and native silver ranges $78.2-81.8kg/mm^{2}$ respectively. The filling temperature of fluid inclusions in quartz ranges from $130-280^{\circ}C$. On the basis of arsenpyrite geothemometer, the equilibrium temperature and sulfur fugacity of the pyrite-arsenopyrite-pyrrhotite(Hpo) assemblage is assumed to be in ange from $300-310^{\circ}C$ and $10^{-10}$ to $10^{-11}$ atm. The estimated ore reserviors on Cheongju mine area are calculated to 8000 T/M, averaing 8.6g/t Au, 27.8 g/t Ag, 1.25% Pb, l.65% Zn.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.267-267
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• 2009

Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.442-443
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• 2009

We prepared and characterized particle based CIGS thin film using a thermal evaporator. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• 보존과학연구
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• s.26
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• pp.27-40
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• 2005

This study is to be investigated through component analysis and metallurgical texture in order to save an information of the manufacturing technique for the bronze bell in Naksan-sa. The bronze bell was analyzed with nine samples not stirred by the fire and except the contents of tin is the maximum and minimum the average of Cu is 81.8wt%, Sn is15.8wt% and indicates that some impurities are in it. With the result of an analysis of component and microtexture for impurities material which exists in it with using the SEM-EDS, the material was revealed the sulfur. As the result of these factors, the bronze bell of Naksan-sa is used from ore which mainly consist of the Chalcopyrite($CuFeS_2$) or Bornite($Cu_5FeS_4$) containing much sulfur.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.346-352
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• 1992

반자성 반도체인 MnxCd1-xGa2Se4의 단결정을 조성비 ( $0leq$ $X \leq$ 1) 영역에서 TVTP(time-varying temperature profile)에 의한 화학수송법으로 성장하였다. 성장된 단결정 은 자연면을 갖은 경면으로 성장되었으며, X = 1.0 경우인 단결정의 크기는 12 $\times$ 6 $\times$ 1.5mm3이었다. MnxCd1-xGa2Se4의 결정구조는 defect chalcopyrite 구조이었으며, 조성비 X 가 증가함에 따라 격자상수 a는 선형적으로 감소하고, 격자상수 c는 증가하였다. 또한 distortion factor 2-(c/a)는 감소하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.231-231
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• 2003

I-III-Ⅵ족 CuInGaSe$_2$(CIGS)계 화합물 태양전지는 1 eV 이상의 직접 천이형 에너지 밴드갭을 가지며, 전기 광학적으로 매우 안정하여 태양전지의 광흡수층으로 매우 이상적이다. CIGS 광흡수층제조를 위하여 용매열법 (solvothermal method)으로 CIGS나노입자를 합성하였다. 용매열법은 진공장비를 사용하던 기존의 방법에 비해 저온, 저압에서 저가로 합성할 수 있다는 장점을 가지고 있다. Copper, indium selenium 및 gallium 분말과 유기용매 ethylenediarnine을 autoclave안에서 반응시켜 CIGS 나노입자를 제조하였다. 280 에서 14시간동안 반응시켜 직경이 30-80 nm인 구형에 가까운 CIGS 나노입자를 얻었다. 이것은 용매열법에 의한 4성분계의 CIGS 나노입자의 최초 합성이다. diehyleneamine을 용매로 사용한 경우에 한하여 구형의 CIS 입자를 합성할 수 있다고 보고되었으나, Cu와 이중 N-chelation이 형성되는 ethylenediamine 용매임에도 불구하고 구형의 CIGS 나노분말이 형성된 것은 solution-liquid-solid (SLS) 기구로 설명할 수 있었다. HRSEM, TEM, XRD. EDS으로 나노분말의 형상 크기 및 조성을 조사하여 chalcopyrite 구조의 CuInGaSe$_2$ 임을 확인하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.230-230
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• 2003

Chalcopyrite 구조를 가진 CuInSe$_2$ (CIS) 나노입자를 유기용매인 diethylamine을 사용하여 autoclave안에서 용매열법(solvothermal method)으로 제조하였다. 180 $^{\circ}C$에서 36시간 반응시켜 길이가 10-30 nm, 폭이 5-10 nm인 rod-Eke 형상을 한 CIS 나노입자를 얻었다. 반응온도를 25$0^{\circ}C$로 증가시키고 동일한 반응시간에서 보다 미세하고 균일한 구형의 CIS 나노입자를 관찰할 수 있었다. 한편, 190 $^{\circ}C$에서 얻어진 CIS 나노입자는 36시간을 반응시킨 경우 구형으로 관찰되었으나 60시간 반응시킨 경우는 길이가 50-100 nm 인 rod-like 입자로 성장하였다. 이와 같이 반응시간과 온도를 달리하여 나노입자의 형상이 바뀌는 것을 입자성장기구의 관점에서 고찰하였다. 반응시간과 온도에 따라 얻어진 CIS 나노 입자들의 결정성, 미세구조 그리고 정량 및 정성분석을 XRD, SEM, TEM, EDS등으로 각각 행하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.160-162
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• 2009

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).