• The Journal of Korean Academy of Prosthodontics
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• v.35 no.1
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• pp.130-143
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• 1997

A heat-pressed technique(IPS-Empress, Ivoclar) has been described to construct single unit crown, inlay/onlay and veneers using a partially pre-cerammed and pre-colored glass-leucite ingot that has the greateast strength by the combination of heat-pressed procedure through the smalldiameter sprue and heat treatment procedure. The purpose of this study was to evaluate the flexure strength of a heat-pressed ceramic material(IPS-Empress) without simulated firing treatments according to pontic designs. Two groups of 9 disks(1.4mm thick, 14mm in diameter) each using two types of sprues with different diameters($({\Phi}2.8\;,{\Phi}1.8)$) and numbers were prepared. The specimens were mounted in the testing jig. The flexural strengths were determined, by means of the bi-axial bending test, by loading the center of disk to failure using a universal testing machine(Zwick 145141, Zwick, Germany) at a cross-head speed of 1.0 mm/min. The means flexural strength value of one group using a sprue with ${\Phi}2.8$ was $140.4{\pm}8.0Mpa$. That of the other group using two sprues with ${\Phi}1.8$ was $151.8{\pm}10.3Mpa$. After analysis, results showed that there was a statistical difference between groups(t=2.33m p<0.05). No clnical implications were drawn from these data because of absence of simulated firing treatment.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.20-25
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• 2001

PbTiO$_3$ thin films were prepared by low-pressure thermal plasma deposition on (100)Pt/(100)MgO substrates. Mist of source material in which metal alkoxides are dissolved in 2-methoxyethanol was introduced into plasma through heating furnace and deposited onto substrates at $600^{\circ}C$. As-deposited PbTiO$_3$/Pt/MgO thin film prepared at 1.33$\times$10$^4$ Pa was grown epitaxially, but was consisted of many rectangular shaped grains, with many grain boundaries and it was impossible to measure electric properties. As-deposited film prepared at 1.00$\times$10$^4$ Pa showed weak peaks of X-ray diffraction and the film was not grown epitaxially. On the other hand, the film after annealed at $700^{\circ}C$ showed strong diffraction peaks and epitaxial growth was also observed. For annealed film, moreover, no clear grain boundaries were observed. The value of ${\varepsilon}_r$, tan${\delta}$, Pr and Ec of annealed film were 160, 3.2%, 10.4${\mu}$C.cm$^-2$ and 51.2kV.cm$^-1$, respectively. Since the composition, Pb/Ti, measured by EDS attaching to SEM changed point by point, the distribution of composition in annealed film was investigated and found out several relations between composition and electric properties. At stoichiometric composition, Pr and Ec showed the lowest value and they gradually became large as composition deviated from stoichiometric one. Moreover, the value of ${\varepsilon}_r$ became gradually large as the ratio of Ti became high.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.7
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• pp.44-50
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• 2009

High-pressured jetting is now widely used in the advanced cutting processes of polymers, metals, glass, ceramics and composite materials because of some advantages such as heatless and non-contacting cutting. Similarly to the focused laser beam machining, it is well known as a type of high-density energy processes. High-pressured jetting is going to be developed not only to minimize the cutting line width but also to achieve the short cutting time as soon as possible. However, the interaction behavior between a work piece and high-velocity abrasive particles during the high-pressured jet cutting makes the impact mechanism even more complicated. Conventional high-pressured jetting is still difficult to apply to precision cutting of micro-scaled thin work piece such as thin metal sheets, thin ceramic substrates, thin glass plates and TMM (Thin multi-layered materials). In this paper, we proposed the advanced high-pressured jetting technology by introducing a new abrasives supplying method and investigated the optimal process conditions of the cutting pressure, the cutting velocity and SOD (Standoff distance).

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.34-37
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• 2003

[ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.451-456
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• 2010

A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.726-731
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• 2002

Reaction synthesis is a process to form ceramics, intermetallics and their composites from elemental powder mixture. Application of this process to a surface modification techniques has a possibilities to enable the process at a lower temperature or for a shorter time, although synthesized materials are likely to include voids and unreacted elements. This paper intend to examine the effect of Si addition to the mixture of Al and Ni on the densification of synthesized Ni-Al intermetallic compounds and to evaluate the surface properties of obtained coatings. By the Si addition, exothermic reaction temperature to form Ni-Al intermetallic was lowered to be below the melting point of Al. Si soluted $Al_3$Ni$_2$, $Al_3$Ni and $Al_{6}$Ni$_3$Si were mainly formed in the coating layer when powder mixture was heated to 973K for 300s. Besides, densification was enhanced by increasing hot press pressure, Si additions and heating rate. When the composition of eutectic Al-Si reaches 78%, void ratio of sintered compact reduced to 0.4%. It is caused by higher flowability of Al-Si liquid phase generated and its infiltration into the void. Since the hardness of NiAl(Si) compound (about 600HV) formed in the coating layer is higher than that of Ni-Al compound (about 400HV), coating layer with high density and superior wear property is obtained by hot press using reaction synthesis from Al-Ni-Si powder mixture.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.278-284
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• 2017

In this work, Ta-substituted $Li_7La_3Zr_{2-x}O_{12}$ (LLZTO) powder and pellets with garnet cubic structure were fabricated and characterized by modified and optimized sol-gel synthesis. Ta-substituted LLZO powder with the smallest grain size and pure cubic structure with little pyrochlore phase was obtained by synthesis method in which Li and La sources in propanol solvent were mixed together with Zr and Ta sources in 2-methoxy ethanol. The LLZTO pellets made with the prepared powder showed cubic garnet structure for all conditions when the amount of Li addition was varied from 6.2 to 7.4 mol. All the X-ray peaks of the pyrochlore phase disappeared when the Li addition was increased above 7.0 mol. When the final sintering temperature was varied, the LLZTO pellet had a pyrochlore-mixed cubic phase above $1000^{\circ}C$. However, the surface morphology became much denser when the final sintering temperature was increased. The sol-gel-driven LLZTO pellet with a sintering temperature of $1100^{\circ}C$ showed a lithium ionic conductivity of 0.21 mS/cm when Au was adopted as electrode material for the blocking capacitor. The results of this study suggest that modified sol-gel synthesis is the optimum method to obtain cubic phase of LLZTO powder for highly dense and conductive solid electrolyte ceramics.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.153-159
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• 2018

Porous ceramic plates were prepared from Onggi clay and bamboo charcoal powder at 1100 and $1200^{\circ}C$ and their porous properties and water absorption, and the cooling effect of porous plates, were investigated to produce eco-friendly porous ceramics for a self-cooling system that relies on the evaporation of absorbed water. Porous properties were dependent on the particle size of charcoal powder pore forming additive and the firing temperature; properties were also found to be dependent on the total pore volume, average pore size and porosity, which had values of $0.103-0.243cm^3/g$, 0.81 - 2.56 mm and 20.9 - 38.2%, respectively, at $1100^{\circ}C$ and $0.04-0.18cm^3/g$, 0.33 - 2.03 mm and 10.8 - 30.9%, respectively, at $1200^{\circ}C$. Cooling temperature difference of flowing air parallel to surface of porous ceramic plates fired with two kinds of charcoal powder at $1100^{\circ}C$ was $3.5-3.6^{\circ}C$ at $26^{\circ}C$ and 60% of relative humidity in a closed box. Cooling temperature difference was dependent on the number of porous plates and the distance between porous plates. A simple and eco-friendly cooling system using porous ceramic plates fired from Onggi clay and charcoal powder was proposed.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.