• Title/Summary/Keyword: Ceramic microstructure

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Micorstructure and Microwave Dielectric Propertics of Ni-doped $(Zr_{0.8}Sn_{0.2})TiO_4$ Ceramics

  • Lee, Dal-Won;Sahn Nahm;Kim, Myong-Ho;Byun, Jae-Dong
    • The Korean Journal of Ceramics
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    • v.2 no.3
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    • pp.162-166
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    • 1996
  • The effects of NiO addition on the microstructure and microwave dielectric properties of ($Zr_{08}Sn_{02}$)$TiO_4$ (ZST) were investigated. With the NiO addition, a higher density of ZST ceramics than 95% of the theoretical values has been obtained in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be $NiTiO_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_r$ decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in terms of the second phase. The ZST ceramics with 0.25 wt% NiO showed ${\varepsilon}_{\gamma}$=38, Q=7000 at GHz and TC$\gamma$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by the previous investigations.

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Hafnium Carbide Protective Layer Coatings on Carbon/Carbon Composites Deposited with a Vacuum Plasma Spray Coating Method

  • Yu, Hui-Il;Kim, Ho-Seok;Hong, Bong-Geun;Sin, Ui-Seop;Mun, Se-Yeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.237.2-237.2
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    • 2016
  • A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

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Microstructure and Dielectric Properties of ($Sr_{1-x}Ca_x)TiO_3$ Ceramic Thin Film by RF Sputtering Method (RF 스퍼터링법에 의한 ($Sr_{1-x}Ca_x)TiO_3$ 세라믹 박막의 미세구조 및 유전특성)

  • 김진사;오재한;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.11
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    • pp.984-989
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    • 1998
  • The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

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Microstructure and dielectric properties with a contents Ca of (Sr.Ca)$TiO_3$-based grain boundary layer ceramics ((Sr.Ca)$TiO_3$계 입계층 세라믹의 Ca변화량에 따른 미세구조 및 유전특성)

  • 최운식;김충혁;이준웅
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.534-542
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    • 1994
  • Microstructures and dielectric properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.006Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramic were investigated. The specimens fired in a reducing atmosphere(N$_{2}$) were painted on the surface with CuO paste, and then annealed at 1100.deg. C for 2 hr. SEM and EDAX revealed that CuO penetrated rapidly into the bulk along the grain boundaries during the annealing. Grain size increased with increasing Ca content up to 15[mol%], but decreased with further addition. In the specimens with 10-15[mol%l of Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss(tan .delta[%]) <0.3[%] and capacitance change rate with temperature <.+-.[%], respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over 10$^{6}$ [Hz].z].

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Zinc Vacancy Ordering in BaTEX>$(Zn_1/3Ta2/3)O_3$Ceramics

  • Park, Seong-Jin;Sahn Nahm;Kim, Myong-Ho;Byun, Jae-Dong
    • The Korean Journal of Ceramics
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    • v.2 no.4
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    • pp.242-245
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    • 1996
  • The microstructure of $Ba (Zn_{1/3}Ta_{2/3})O_3$ (BZT) was investigated using X-ray diffractometry(XRD) and transmission electron microscopy (TEM). $Ba_{0.5}TaO_3$ and $Ba_3TaO_{5.5}$ (BT) phasses were observed on the surface of the sintered specimen by XRD. Furthermore, a new type of ordering along the [110] direction was found in sintered specimen by the XRD and TEM analysis. The wavelength of ordering was 0.9 nm which is three times larger than the interplanar distance of (110) plane and new type of ordering is considered to be a result of Zn vacancy ordering. The creation of Zn vacancies and formation of BT phases are attributed to the evaporation of volatile ZnO. A new mechanism for ZnO loss is suggested. In this mechanism, only Zn vacancies are created only when the amount of ZnO loss is small and as the amount of ZnO loss increases, BT phases are formed at the same time. A new unit cell of ordered structure is suggested as the superlattics containing three BZT unit cells.

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Piezoelectric and Dielectric Properties of PMN-PNN-PZT Ceramics for Ultrasonic Generator with Calcination Temperature (하소온도변화에 따른 초음파절삭기용 PMN-PNN-PZT 세라믹스의 압전 및 유전 특성)

  • Yoo, Ju-Hyun;Kim, Seung-Won;Seo, Dong-Hi;Lee, Eun-Sup;Choi, Nak-Gu;Jeong, Hoy-Seung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.3
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    • pp.152-156
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    • 2017
  • In this paper, $Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ ceramics were fabricated by the conventional solid state method to obtain excellent dielectric properties for ultrasonic generators. The effects of 2nd calcination temperature on their microstructure and piezoelectric properties were systematically investigated. The tetragonality increased in the ceramics when 2nd calcination temperature increased to the optimized temperature at $750^{\circ}C$. At that temperature, excellent physical properties ($d_{33}=352\;pC/N$, ${\varepsilon}_r=1,687$, $k_p=0.570$, $Q_m=1,640$) were obtained for ultrasonic generator application.

Evaluation of Long Duration Current Impulse Withstand Characteristics of ZnO Blocks for High Voltage Surge Arresters (초고압 피뢰기용 ZnO 소자의 장시간 방전내량 특성 평가)

  • Cho, Han-Goo;Yun, Han-Soo;Kim, Seok-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.4
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    • pp.398-403
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    • 2006
  • This paper describes the evaluation of the long duration current impulse withstand characteristics of ZnO blocks for high voltage surge arresters. Four ZnO varistors were manufactured with the general ceramic production method and the long duration current impulse withstand test, electrical uniformity evaluation test and microstructure observation were performed. All varistors exhibited high density, which was in the range of $5.42{\sim}5.46g/cm^3$. In the electrical properties, the reference voltage of samples was in the range of $5.11{\sim}5.25\;kV$ and the residual voltage was in the range of $8.314{\sim}8.523\;kV$. In the long duration current impulse withstand test, sample No.2 and No.3 failed at the 2nd and 4th shot of series impulse currents, respectively, but the rest survived 18 shots during the test. Before and after this test, the variation ratio of the residual voltage of samples survived was below 0.5 %, which was in the acceptance range of 5 %. According to the results of the test, it is thought that if the soldering method is improved, ZnO varistors would be possible to apply to the high voltage arresters like the station class and transmission line arresters in the near future.

The Dielectric Properties of BaTiO3/SrTiO3 Heterolayered Thick films by Screen Printing Method

  • Nam, Sung-Pill;Lee, Young-Hie;Bae, Seon-Gi;Lee, Sung-Gap
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.210-213
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    • 2005
  • The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

Effect of K/Na ratio on Piezoelectric Properties of Modified-$(K_{1-x}Na_x)NbO_3$ "Hard" Lead-free Materials

  • Im, Jong-Bong;Jeon, Jae-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.50.1-50.1
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    • 2011
  • Lead-free ceramics with a composition of 0.55 mol%$K_4CuNb_8O_23-(K_{1-x}Na_x)NbO_3$ (KCN-KNNx) where $0.45{\leq}x{\leq}0.60$ were synthesized by conventional ceramic processing. Results revealed that the addition of Na was effective in changing the microstructure and relative density of KCN-KNNx. Further, the addition of Na resulted in a slight shift of the phase transition temperatures (To-t and Tc) toward low values. A high mechanical quality factor (Qm) of 1850 was found atx=0.54, which might be due to the build-up of an internal bias field (Ei) within KCN. Thermal hysteresis in KNNx was confirmed with an increase in the Na content during the heating and cooling cycles, resulting from structural changes. Thus, KCN-KNNx with x=0.54 exhibits excellent piezoelectric properties with d33 (97 pC/N), kp (36%), and Qm (1850), being promising candidates for application in high-power piezoelectric devices.

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Properties of Plasma Sprayed $Al_2O_3/SS316$ Graded Coatings (플라즈마 용사용 $Al_2O_3/SS316$ 복합 분말 제조 및 경사 코팅충의 제조에 관한 연구)

  • 민재웅;송병길;김삼중;노재승;서동수
    • Journal of Welding and Joining
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    • v.20 no.2
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    • pp.109-115
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    • 2002
  • In the case of using high temperature by coating ceramic/metal, large stress was produced due to difference of thermal expansion coefficient between those. And then lead to delamination. In order to relaxation of the stress A1$_2$O$_3$/SS316 composite powders with $10wt.%Al_2O_3$ compositional gradient and $10wt.%Al_2O_3$ agglomerated powder were made by spray drying method. These powders were sintered to improve the strength and to be plasma sprayed in order to fabricate the FGC(functionally graded coating). The influence of gun power, working distance and Ar pressure on the microstructure of the coating layer was studied in order to optimize the plasma spray conditions. It was proven that the optimum conditions were 40kw gun power, 5cm working distance and $100ft^3/h$ Ar flow for both powders. FGC with 10 compositional steps was fabricated and the total thickness was 1.3mm. FGC was heat treated at $1100^{\circ}C$for 10hours to evaluate the heat resisting characteristics.