• Title/Summary/Keyword: Centroid Shift

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A Study on the Correction of Beam Pattern for the Ultrasonic Attenuation Coefficient Estimation (초음파 감쇠계수 주정에 있어서 빔 형태의 보정에 관한 연구)

  • Kim, Gi-Uk;Choe, Heung-Ho;Hong, Seung-Hong
    • Journal of Biomedical Engineering Research
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    • v.8 no.1
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    • pp.41-48
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    • 1987
  • In estimating the freguency-dependent attenuation coefficient, we analyzed the range-dependent ultrasonic beam and proposed the method of calculating the experimental equation of beam pattern in order to reduce the error on the influence of beam pattern. These experimental equations are divided into the spectral centroid and the spec ural standard deviation slope according to axial propagation length. These are repnesented by the first-order equation in the near field of the beam and the second- order eqLlatlon In the far field. In order to prove the validity of this method, the attenuation coefficients of the non-corrected ease and the corrected case are compared. Using the reflected signal from acryle plate, the attenuation coefficients were estimated by the spectral shift method ann the spectral difference method. The result shows attenuation coeffi talents after correction are better than attenuation coefficients before correction. And this method can be applied In vivo measurement.

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Genetic Diversity of Soybean Pod Shape Based on Elliptic Fourier Descriptors

  • Truong Ngon T.;Gwag Jae-Gyun;Park Yong-Jin;Lee Suk-Ha
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.50 no.1
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    • pp.60-66
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    • 2005
  • Pod shape of twenty soybean (Glycine max L. Merrill) genotypes was evaluated quantitatively by image analysis using elliptic Fourier descriptors and their principal components. The closed contour of each pod projection was extracted, and 80 elliptic Fourier coefficients were calculated for each contour. The Fourier coefficients were standardized so that they were invariant of size, rotation, shift, and chain code starting point. Then, the principal components on the standardized Fourier coefficients were evaluated. The cumulative contribution at the fifth principal component was higher than $95\%$, indicating that the first, second, third, fourth, and fifth principal components represented the aspect ratio of the pod, the location of the pod centroid, the sharpness of the two pod tips and the roundness of the base in the pod contour, respectively. Analysis of variance revealed significant genotypic differences in these principal components and seed number per pod. As the principal components for pod shape varied continuously, pod shape might be controlled by polygenes. It was concluded that principal component scores based on elliptic Fourier descriptors yield seemed to be useful in quantitative parameters not only for evaluating soybean pod shape in a soybean breeding program but also for describing pod shape for evaluating soybean germplasm.

A Study on Carrier Injection and Trapping by the High Field for MOS(Metal-$Al_2O_3$-p Si$) Structure (Metal-$Al_2O_3$-p Si$의 MOS 구조에 있어서 고전계에의한 Carrier주입과 트랩에 관한 연구)

  • Park, Sung Hee;Sung, Man Young
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.1
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    • pp.102-109
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    • 1987
  • This study is carrier out to investigate the carrier injection and the characteristics of trapping for the CVD deposited Al2O3 film on Si substrates. Samples used are metal -Al2O3-Si Structure in which metal field plates are used with Aluminium or God. Canier injection and trapping, which result in flat band voltalge shift, occur at fields as low as 1~2 MV/cm. An approximate method is proposed for computing the location of the centroid of the trapped electrons in this paper. Results show that carriers are trapped near the injecting interface at fields less than about 5MV/cm. Because of continued charging, a steady state can not be reached. Therefore the unique I-V curve is obtained when the traps are initially empty. By utilization of applied voltage on each point of the fresh device sample, it is measured the I-V surves for two polarities of applied voltage. The current densities observed in the Al2O3 films are much larger than those obtained in SiO2.

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