• Journal of Institute of Control, Robotics and Systems
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• v.5 no.6
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• pp.698-704
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• 1999

There are several types of defects of SMDs mounted on PCB, that is, missing components, misalignment, wrong parts and poor solder joints. This research study mainly focuses on measuring of deviation of SMD leads using the partial image of component, not using the full image. This processing based on the partial image has the advantage of the reduction in calculation time compared to the full image. Since position of lead is calculated with respect of the reduction in calculation time compared to the full image. Since position of lead is calculated with respect to pad, the accuracy of the system is not dependent on percise positioning stage. The grabbed image of gray scale is converted into binary format using a cutomatic threshold. After small fragments in the image is removed by a series of morphology operations such as opening and closing, the centroids of PCB pads and SMD leads is obtained together with labeling of blobs. Translational shift and rotationial angle of SMD are succedingly estimated using above information and chip data. The expression that can calculate the maximum deviation of leads with respect to PCB pads has been derived, and inferior mounting of SMD is judged by a given criterion. Some experiments have been executed to verify this measuring scheme.

• Journal of Biomedical Engineering Research
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• v.8 no.1
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• pp.41-48
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• 1987

In estimating the freguency-dependent attenuation coefficient, we analyzed the range-dependent ultrasonic beam and proposed the method of calculating the experimental equation of beam pattern in order to reduce the error on the influence of beam pattern. These experimental equations are divided into the spectral centroid and the spec ural standard deviation slope according to axial propagation length. These are repnesented by the first-order equation in the near field of the beam and the second- order eqLlatlon In the far field. In order to prove the validity of this method, the attenuation coefficients of the non-corrected ease and the corrected case are compared. Using the reflected signal from acryle plate, the attenuation coefficients were estimated by the spectral shift method ann the spectral difference method. The result shows attenuation coeffi talents after correction are better than attenuation coefficients before correction. And this method can be applied In vivo measurement.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.50 no.1
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• pp.60-66
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• 2005

Pod shape of twenty soybean (Glycine max L. Merrill) genotypes was evaluated quantitatively by image analysis using elliptic Fourier descriptors and their principal components. The closed contour of each pod projection was extracted, and 80 elliptic Fourier coefficients were calculated for each contour. The Fourier coefficients were standardized so that they were invariant of size, rotation, shift, and chain code starting point. Then, the principal components on the standardized Fourier coefficients were evaluated. The cumulative contribution at the fifth principal component was higher than $95\%$, indicating that the first, second, third, fourth, and fifth principal components represented the aspect ratio of the pod, the location of the pod centroid, the sharpness of the two pod tips and the roundness of the base in the pod contour, respectively. Analysis of variance revealed significant genotypic differences in these principal components and seed number per pod. As the principal components for pod shape varied continuously, pod shape might be controlled by polygenes. It was concluded that principal component scores based on elliptic Fourier descriptors yield seemed to be useful in quantitative parameters not only for evaluating soybean pod shape in a soybean breeding program but also for describing pod shape for evaluating soybean germplasm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.102-109
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• 1987

This study is carrier out to investigate the carrier injection and the characteristics of trapping for the CVD deposited Al2O3 film on Si substrates. Samples used are metal -Al2O3-Si Structure in which metal field plates are used with Aluminium or God. Canier injection and trapping, which result in flat band voltalge shift, occur at fields as low as 1~2 MV/cm. An approximate method is proposed for computing the location of the centroid of the trapped electrons in this paper. Results show that carriers are trapped near the injecting interface at fields less than about 5MV/cm. Because of continued charging, a steady state can not be reached. Therefore the unique I-V curve is obtained when the traps are initially empty. By utilization of applied voltage on each point of the fresh device sample, it is measured the I-V surves for two polarities of applied voltage. The current densities observed in the Al2O3 films are much larger than those obtained in SiO2.