• KSBB Journal
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• 제9권5호
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• pp.457-463
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• 1994

곰팡이 세포농도를 측정하기 위하여 pellet에 대한 침강 특성을 고려하여 홉광도를 측정하는 새로운 방법을 개발하였다$.$ Pellet의 침강을 막기 위해 spec trophotometer의 cuvette 내에셔 소형 마그네닥바 로 시료를 적절히 교반시켰는데 그 결과 안정된 값의 흡광도를 얻을 수 있었으며 세포의 건조중량과 흡광도간에 선형적인 관계가 었는 것으로 나타났다. 그러나 크기별로 pellet입자를 분리한 결과 입자 크 기별로 통일한 흡광도에서 셔로 다른 건조중량을 갖는 것으로 나타났으며 입자의 직경이 $355{\mu}m$ 이상인 경우 교반에 의한 홉광도를 측정할 수 없었다. 이상의 결과로부터 pellet을 형성하는 곰팡이 배양액의 경우 pellet의 침강 특성을 고려해 줌으로써 흡광도 를 이용한 곰팡이 세포농도의 측정이 가능하다는 결론을 얻었다.

• 상하수도학회지
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• 제19권5호
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• pp.632-638
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• 2005

Membrane fouling index such as Silt Density Index (SDI) and Modified Fouling Index (MFI) is an important parameter in design of the integrated RO/NF membrane processes for drinking water treatment. In this study, the effect of particle, membrane and feed water characteristics on membrane fouling index were investigated systematically. Higher fouling index values were observed when filtering suspensions with smaller particle size and higher feed particle concentration. Larger membrane resistance due to smaller pore size resulted in an increased membrane fouling index. The variations of feed water hardness and TDS concentrations did not show any impact on fouling index, suggesting that there were no significant colloidal interactions among particles and thus the porosity of particle cake layer accumulated on the membrane surface could be assumed to be 0.36 according to random packing density. Based on the experimental observations, fundamental membrane fouling index model was developed using Happel Cell. The effect of primary model parameters including particle size ($a_p$), particle concentration ($C_o$), membrane resistance ($R_m$), were accurately assessed without any fitting parameters, and the prediction of membrane fouling index such as MFI exhibited very good agreement with the experimental results.

• 대한전자공학회논문지
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• 제26권6호
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• pp.124-130
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• 1989

ITIC를 중심으로 고밀도 DRAM을 위한 획기적인 밀도 향상을 기할 수 있는 공정과정과 회로디자인의 기술 혁신에 대하여 지다이너 입장에서 논의하였다. 여기서 개발한 TETC라 부르는 DRAM은 trench 기술과 SEG기술을 이용하였는데 $n^+-polysilycon$인 storage 전극과 $n^+-source$ 전극이 self-con-tact되고 soft error 를 극복할 만큼 충분히 큰 정전용량을 갖으므로 절연 영역을 따라서 만든 수직의 캐패시터를 이용함으로써 셀 크기를 기존의 BSE cell구조에 비하여 약 30% 감소되었다.

• 신재생에너지
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• 제19권2호
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• pp.31-39
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• 2023

Salinity gradient energy can be generated from a mixture of water streams with different salt concentrations by using reverse electrodialysis (RED). In this study, we evaluated the effect of stack size and number of cell pairs on the energy efficiency and specific energy of the RED process. Additionally, we studied the prementioned parameters to maximize the power density of RED. The performance of the RED stack which used a patterned ion exchange membrane, was evaluated as a function of stack size and feed flow rate. Moreover, it was noted that an increase in stack size increased the ion movement through the ion exchange membrane. Furthermore, an increase in feed flow rate led to a reduction in the concentration variation, resulting in an increase in OCV and power density. The energy efficiency and specific energy for 100 cells in the 10 × 10 cm² stack were the highest at 12% and 0.05 kWh/m³, respectively, while the power density from 0.33 cm/s to 5 × 5 cm² stack was the highest at 0.53 W/m². The study showed that the RED performance can be improved by altering the size of the stack and the number of cell pairs, thereby positively affecting energy efficiency and specific energy.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2002년도 봄 학술발표회 논문집
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• pp.627-634
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• 2002

To facilitate a drilling plan for grouting in fractured rock, an algorithm of practical use associated with a new term “fracture density distribution”or“fracture tomogram”is developed. It is well known that Televiewer data(amplitude and traveltime image) provide detailed information about not only dip and dip direction of each fracture but also its aperture size estimated by an appropriate evaluation algorithm. A selected plane section of medium around a borehole or the cross section between two boreholes is discretized into a two dimensional grid of cells(rectangular elements). As each elongated(straight) fracture passes through the cells, the corresponding aperture size value is successively summed up in each cell, depending on the fracture length segment. In this, the fracture lines can be determined by intersecting of each fracture plane with the selected plane section. If the fracture line does not pass through a particular grid element, the segment length is set to zero. The final value(aperture size value of each cell) derived from all the detected fractures constitutes the fracture density distribution of the selected plane section, Field examples are illustrated, which will prove the benefit of the suggested algorithm for several kinds of grouting works.

• Fibers and Polymers
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• 제5권2호
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• pp.160-169
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• 2004

Polystyrene/layered silicate nanocomposites were prepared by melt intercalation. To examine the distribution of the clay in polymer matrix, small angle X-ray scattering (SAXS) and transmission electron microscopy (TEM) were used. Intercalated nanocomposites were obtained and their rheological properties were investigated. Microcellular nanocomposite foams were produced by using a supercritical fluid. As clay contents increased, the cell size decreased and the cell density increased. It was found that layered silicates could operate as heterogeneous nucleation sites. As the saturation pressure increased and the saturation temperature decreased, the cell size decreased and the cell density increased. Microcellular foams have different morphology depending upon the dispersion state of nanoclays.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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• pp.78-79
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• 2015

We investigate the switching current for various cell diameters and DM interaction. We find that the current density for switching can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover the switching current density is also strongly influenced by DM interaction. In the presentation, we will discuss the effect of domain wall formation and more various DMI constant on the switching current desity in detail.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• 한국컴퓨터산업학회논문지
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• 제6권5호
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• 소성∙가공
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• 제15권6호
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• pp.441-444
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• 2006

The deformation behavior of copper during equal channel angular pressing(ECAP) was calculated using a three-dimensional version of a constitutive model based on the dislocation density evolution. Finite element simulations of the variation of the dislocation density and the dislocation cell size with the number of ECAP passes are reported. The calculated stress, strain and cell size are compared with the experimental data for Cu deformed by ECAP in a modified Route C regime. The results of FEM analysis were found to be in good agreement with the experiments. After a rapid initial decrease down to about 200nm in the first ECAP pass, the average cell size was found to change little with further passes. Similarly, the strength increased steeply after the first pass, but tended to saturate with further pressings. The FEM simulations also showed strain non-uniformities and the dependence of the resulting strength on the location within the workpiece.