• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.40-43
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• 1995

In this paper, structual, optical and electrical properties of CdZnS thin films prepared by electron beam evaporation method were studied. The crysta1 structure of CdZnS films deposited was hexagonal type with preferential orientation of the (002) plane parallel to the substrate. The results of optical transmittance of the CdZnS film show that absorption edge is shifted to ZnS and optical bandgap was larger wish increasing ZnS content. The resistivity of the CdZnS film is decreasing with increasing ZnS content and mininum for 20 mole%.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.57-57
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• 2010

Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.35-37
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• 1988

Polycrystalline $Cd_{1-x}Zn_xS$ films were prepared by coaling a slurry which consisted of CdS, ZnS, $CdCl_2$ and propylene glycol on gloss substrates and by sintering in a nitrogen atmosphere. Microstructures, optical transmittance and electrical resistance of the sintered films have been investigatd. Grain shape of $Cd_{1-x}Zn_xS$ films sintered in a sealed boat was nearly spherical but the shape became, irregular when sintered in evaporating condition due to occurrence of CIGM (Chemically Induced Grain-boundary Migration). Controlling the rate of evaporation of $CdCl_2$, sintered $Cd_{1-x}Zn_xS$ films with high optical transmittance and low electrical resistance could be obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.531-531
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• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• Journal of Ecology and Environment
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• v.33 no.3
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• pp.245-251
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• 2010

We evaluated the interaction between Cd and Zn in the bioaccumulation of seven clones of Salix caprea, which were exposed both to Cd and Zn alone and to a combination of Cd and Zn. Cadmium (Cd) and Zn concentration in the four treatments were administered in the following order: root > leaf > stem, and obvious differences were noted among the treatments and clones. The leaf Cd concentration of clone BH2 and stem Cd concentration of clone BH5 in the combined Cd and Zn treatment group was increased by 62% and 110%, respectively, relative of that of the Cd alone treatment group. On the other hand, the leaf and stem Zn concentration of clone BH8 in the combined Cd and Zn treatment group was reduced by 66% and 61%, respectively, relative to that of the Zn alone treatment group. Translocation of Cd and Zn from the root was higher in the leaf than in the stem, and the combined Cd and Zn treatment stimulated the translocation of Cd from the root to the leaf and stem, whereas it suppressed the translocation of Zn from the root to the leaf and stem. Therefore, the interaction effects were considered strongly synergistic with Cd in the presence of Zn, but proved antagonistic to Zn in the presence of Cd in the combined Cd and Zn treatment group. The phytoremediation potentials of the seven clones, which were estimated from standard indices of Cd and Zn concentration in Cd and Zn alone and the combined Cd and Zn treatment groups, were highest in clone BH3, and lowest in clone BH5. Therefore, we recognize S. caprea as an appropriate material for phytoremediation, and this is particularly the case with clone BH3. However, further research will be required to evaluate the effects of Cd and Zn on the physiological changes as well as tolerance mechanisms against metal toxicity in S. caprea clones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.39-42
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• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• Analytical Science and Technology
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• v.14 no.3
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• pp.259-265
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• 2001

Photocatalytic degradation of Congo red was performed using various semiconductors as ZnO, CdS, rutile-$TiO_2$ or mixed rutile-$TiO_2$/ZnO. The change of degradation of the dye was investigated by UV-visible spectrophotometric method. The photocatalytic action of CdS was greater than ZnO and rutile-$TiO_2$ in account of low band gap energy of CdS. The rate of photocatalytic degradation reaction increased drastically in according to increasing ratio of ZnO on mixed rutile-$TiO_2$/ZnO. These photocatalytic effect of rutile-$TiO_2$ was suppressed by more stable rutile-$TiO_2$, doping the hydrolysis product with $Zn^{2+}$ prior to calcination onto the rutile-$TiO_2$ surface.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.393-397
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• 2012

We report a new route to synthesize high quality zinc blende CdS and ZnS nanocrystals in noncoordinating solvent 1-octadecene, using dodecanethiol (DDT) molecules as both the sulfur source and surface capping ligands. Different reaction temperatures and Cd(Zn)/DDT molar ratios were tested to optimize the synthesis conditions. Absorption photoluminescence (PL) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) were used to characterize assynthesized nanocrystals. The narrow half width at the half-maximum on the long wavelength side of the firstexcitonic absorption peak and TEM images demonstrated nearly monodisperse size distributions of asprepared CdS, ZnS, and CdS/ZnS core/shell nanocrystals. Only trap emissions of the nanocrystals were detected when the amount of DDT was excessive, this came from the strong quenching effect of thiol groups on the nanocrystal surfaces. After overcoating with ZnS shells, band-gap emissions of CdS nanocrystals were partially recovered.