• Journal of Powder Materials
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• v.14 no.3 s.62
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• pp.180-184
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• 2007

The material design and synthesis are of important to modem science and technology. Here, we report the synthesis of multifunctional nanomaterials with different properties: feroelecties $YMnO_3$ and multiferroic materials such as $CoFe_2O_4-YMnO_3,\;Fe_3O_4-YMnO_3,\;CoFe_2O_4-Cd_{0.85}Zn_{0.15}S,\;and\;Fe_3O_4-Cd_{0.85}Zn_{0.15}S$ nano-composites by using a chemical synthesis process. These results provide a simple and convenient synthesis process to produce multifunctional nanocomposites.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.64-67
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• 2004

In this paper, to discover the brightness improvement of ZnS:Cu powder electroluminescence (EL), a new structure is proposed in which phosphor and dielectric are mixed between electrodes. Dielectric and phosphor material are BaTiO$_3$ and ZnS:Cu, respectively. The effect of the mixed layer on EL sample is considered the improvement of source efficiency. Although the number of electrons introduced into the phosphor increases only modestly, the high electric field region of phosphor grains increases comparatively in the characteristics of brightness-voltage. Furthermore, the relaxation occurs through leading and trailing edge pairs, which is relatively efficient in characteristics of decay time. With these results, we found that the brightness of newly proposed ZnS:Cu powder electroluminescence was 167.24 cd/$m^2$ at ac voltage of 100V and frequency of 400Hz.

• Economic and Environmental Geology
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• v.44 no.5
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• pp.359-372
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• 2011

TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.225-231
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• 2006

.고상반응법 (solid state reaction)합성된 ZnS:Mn,Cu,Cl 형광체는 약 $20^{\sim}25{\mu}m$ 의 구형이고, Cubic/hexagonal 구조를 보였다. Electroluminescent device(ELD)는 실크 스크린된 형광층(ZnS:Mn,Cu,Cl)/유전체층 ($BaTiO_3$)으로 구성되었으며, 각층은 $30^{\sim}50{\mu}m,\;50^{\sim}60{\mu}m$ 정도로 도포 하였다. 100 V-400 Hz 의 구동조건에서, ELD 의 백색 발광은 450 nm, 480 nm 픽에서 각각 $Cl_s{\to}Cu^{+}\;_{Zn},\;Cl_s{\to}Cu^{2+}\;_{Zn}$ 전이에 의해 중첩된 청색, 녹색 밴드의 발광과, 580 nm 픽에서 Mn 의 $^{4}T_1{\to}^{6}A_1$ 전이에 의한 황색 밴드의 발광으로 이루어진다. Cu 농도의 증가에 따라 450 nm 의 발광 밴드의 휘도는 감소하며 580 nm 의 발광 밴드의 휘도가 증가하였고 발광 휘도가 향상되었다. 즉, 색온도가 높은 cold white(10000 K)에서 색온도가 낮은 Warm white(3000 K) 로 변한다. 이것은 450 nm 의 발광 밴드가 580 nm 의 발광 밴드에 흡수되는 에너지 전이 (Energy transfer) 현상에 기인한다. ZnS:Mn,Cu,Cl 의 Mn 1.5 wt %, Cu 2.5 wt.% 에서 최적 발광 휘도를 보이며, 100 V-400 Hz 에서 약 $12cd/cm^2$이였다.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2016.10a
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• pp.120-120
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• 2016

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.154.2-154.2
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• 2016

In this work, we introduce a solution-processed CdS interlayer for use in inverted bulk heterojunction (BHJ) solar cells, and compare this material to a series of standard organic and inorganic cathode interlayers. Different combinations of solution-processed CdS, ZnO and conjugated polyelectrolyte (CPE) layers were compared as cathode interlayers on ITO substrates to construct inverted solar cells based on $PTB7:PC_{71}BM$ and a $P3HT:PC_{61}BM$ as photoactive layers. Introduction of a CdS interlayer significantly improved the power conversion efficiency (PCE) of inverted $PTB7:PC_{71}BM$ devices from 2.0% to 4.9%, however, this efficiency was still fairly low compared to benchmark ZnO or CPE interlayers due to a low open circuit voltage ($V_{OC}$), stemming from the deep conduction band energy of CdS. The $V_{OC}$ was greatly improved by introducing an interfacial dipole (CPE) layer on top of the CdS layer, yielding outstanding diode characteristics and a PCE of 6.8%. The best performing interlayer, however, was a single CPE layer alone, which yielded a $V_{OC}$ of 0.727 V, a FF of 63.2%, and a PCE of 7.89%. Using $P3HT:PC_{61}BM$ as an active layer, similar trends were observed. Solar cells without the cathode interlayer yielded a PCE of 0.46% with a poor $V_{OC}$ of 0.197 V and FF of 34.3%. In contrast, the use of hybrid ZnO/CPE layer as the cathode interlayer considerably improved the $V_{OC}$ of 0.599 V and FF of 53.3%, resulting the PCE of 2.99%. Our results indicate that the CdS layer yields excellent diode characteristics, however, performs slightly worse than benchmark ZnO and CPE layers in solar cell devices due to parasitic absorption below 550 nm. These results suggest that the hybrid inorganic/organic interlayer materials are promising candidates as cathode interlayers for high efficiency inverted solar cells through the modification of interface contacts.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.399-399
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• 2011

본 논문에서는 Indium tin oxide (ITO) 투명전극의 성장온도($T_G$)가 Cu(In,Ga)$Se_2$ (CIGS) 박막태양전지에 미치는 영향을 살펴 보았다. ITO 박막은 radio-frequency magnetron sputtering을 이용하여 상온에서 $350^{\circ}C$까지의 다양한 $T_G$ 조건에서 i-ZnO/ glass와 i-ZnO/CdS/CIGS/Mo/glass 기판에 증착되었다. ITO의 비저항과 CdS/CIGS 계면 특성은 $T_G$에 크게 영향을 받았다. $T_G{\leq}200^{\circ}C$에서는 $T_G$가 증가할수록 ITO 저항이 감소하였고 이에 따른 series 저항 감소가 태양전지 성능 향상에 기여하였다. 하지만 $T_G$ > $200^{\circ}C$에서는 CdS 버퍼층의 Cd이 CIGS 층으로 확산되어 소자의 p-n 계면이 파괴되는 것을 발견하였다. $T_G=200^{\circ}C$에서 ITO를 증착한 CIGS 태양전지의 경우 가장 높은 광전변환효율을 보였다.