• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.29-34
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• 2005

Tungsten oxide($WO_{3}$) is suitable to materials for photochromic window in the visible region. The resistivities of CdS, $WO_{3}$, and $WO_{3}$/CdS films prepared by thermal evaporation method were $4.61\times 10\^{3}$, $7.59\times10^{3}$, and $6.29\times10^{3}$ $\omega$ cm. And x-ray diffraction patterns of CdS, $WO_{3}$/CdS films showed a preferred orientation of hexagonal(002), and the monoclinic(020) structure, respectively. The optical transmission were measured that the cut-on wavelength were 510nm, 380nm for CdS and $WO_{3}$ films respectively, and the transmission spectrum of $WO_{3}$/CdS was shifted into the visible region. Photoluminescence(PL) spectra showed the two peaks at 2.8 eV and 3.2 eV for the as-grown sample($WO_{3}$/CdS ($500{\AA}$), but the other sample($WO_{3}$/CdS ($1000{\AA}$)) had a peak energy value of 2.8 eV. The photochromism of $WO_{3}$/CdS films showed that the excitation of electron-hole pairs and subsequent coloration is shifted into visible-light range. And the spectral behavior of coloration turned out to be proportional to the excited electron-hole pairs creation rate of CdS film. This result is interpreted in terms of charge carrier injection from the CdS-layer into the $WO_{3}$ films. We found a value of about 2.8 eV of $WO_{3}$/CdS film which is somewhat higher than peak energy of 2.54 eV using CBD prepared by Bechinger et. al.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1418-1420
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• 1996

In this paper, structural properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar ceIl prepared by thermal vacuum evaporation were studied. Structural variation with $CdCl_2/heat$ treatment are assessed using x-ray diffraction and scanning electron microscopy. The crystal structure of CdTe films was zincblend type with preferential orientation of the (111) plane parallel to the substrate. The $CdCl_2$ treatment appears to increase the grain size of polycrystalline CdTe thin film. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment with $CdCl_2$. The conversion efficiency, however, decreased when heat treatment temperature was too high.

• Bulletin of the Korean Chemical Society
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• v.26 no.7
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• pp.1025-1026
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.33-33
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• 1999

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1436-1438
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• 1997

In this paper, CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, and The properties were investigated in detail. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And Ammonium acetate was used as the buffer solution. Also Ammonia was used for controlling pH concentration. The reaction velocity was increased with increasing reaction temperature and decreasing pH concentration. The crystal structure of CdS films grown with various pH concentration had the hexagonal structure with (002) plane peak. In the range of pH $9{\sim}9.5$, the intensity of the peak was highest, and as increasing pH concentration, decreased the intensity of the peak except pH12.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.105-105
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.28.2-28.2
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• 2008

• Journal of the Korean Institute of Navigation
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• v.25 no.4
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• pp.435-442
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• 2001

A new technique to grow a manganese-doped zinc-sulfide(ZnS：Mn) has been proposed using the repeated deposition of the Hot Wall method. The optical characteristics and crystallinity for the ZnS and ZnS：Mn thin films deposited on a quartz glass substrate by the method were investigated. Also, The ZnS：Mn thin film elcetroluminescent devices were fabricated by the method to study luminescence characteristics. All films showed (111)-oriented cubic structure. By the repeated deposition, the deposition rates were decreased, and the optical characteristics and crystalline properties were improved, which clarifies that the method is effective to deposit the thin films with good crystallinity Futhermore, the crystallinity was more improved by the doping of Mn. Only one peak emission at around 585nm originating from Mn luminescent center is observed In the photoluminescent and electroluminescent spectra of ZnS：Mn films and the luminance of the ZnS：Mn-based thin film electroluminescent devices was obtained below 60cd/$m^2$ . The optical and crystalline properties, luminescence characteristics are discussed in terms of the effects of the repeated deposition and Mn-doping.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.41-48
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• 1996

We developed SAW gas sensor for monitoring SOx gas with high sensitivity. It was fabricated as a microsensor for detecting SOx gas by depositing sensing material on SAW device. As a detecting layer material, CdS was selected. Deposition of CdS in the form of thin films was carried out by the ultrasonic spray pyrolysis method using ultrasonic spray nozzle. Thin films with the uniform and large surface area for sensors were deposited. The stable pyrolysis environment provided by uniform and fine droplets formed by spray nozzle made it possible to obtain thin films with excellent quality. The minimum grain size of the CdS thin films was about 50 nm when deposited at $300^{\circ}C$. SAW gas sensors showed reasonable sensitivity and reproducibility. Further studies are required to investigate the interference of other gases to SOx gas detection.