• Title/Summary/Keyword: CdS deposition

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Copper Sulfide Nanowires for Solar Cells (태양전지용 $Cu_2S$ 나노와이어의 제작 및 특성분석)

  • Lim, Young-Seok;Kang, Yoon-Mook;Kim, Won-Mok;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.166-169
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    • 2006
  • We fabricated hexagonal copper sulfide $Cu_2S$ nanowires to obtain a larger contact area of $Cu_2S/CdS$ solar cell. Copper sulfide nanowires were grown on Cu foil at room temperature by gas-sol id reaction. The size, density and shape of nanowires seemed to be affected by the change or reaction time temperature, crystallographic orientation of Cu foil, and molar ratio of the mixed gas. We controled the length and the diameter of the nanowires and we obtained suitable nanowire arrays which has fitting size for uniform deposition with n-type CdS. CdS layer was deposited on the nanowire array by electrodeposition and it seemed to be uniform. The $Cu_2S/CdS$ nanowires/CdS junction showed diode characteristics, A large contact area is expected with the $Cu_2S/CdS$ nanowire structure as compared with the $Cu_2S/CdS$ thin film.

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CdSe/CdS QDSSC에서 $TiO_2$ 증착 효과

  • Park, Jin-Ju;Lee, Seung-Hyeop;Seol, Min-Su;Kim, Hui-Jin;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.380-380
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    • 2011
  • ZnO 나노라드 위에 양자점을 증착한 후 그 위에 $TiO_2$를 ALD방법으로 증착하여 그 passivation 효과가 solar cell 효율에 미친 영향에 대한 실험을 진행하였다. Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 성장시킨다. 여기에 SILAR 방법을 거쳐서 CdS 양자점을 증착시키고, 후에 CBD를 이용하여 CdSe 양자점을 증착시킨다. 여기에 마지막으로 amorphous $TiO_2$로 표면을 덮는 과정을 거치는데, $TiO_2$가 ZnO 라드 위에 균일하고 정밀하게 증착되도록 하기 위해서 Atomic Layer Deposition을 이용하였다. 다양한 분석 방법을 통해 $TiO_2$/CdSe/CdS/ZnO 구조를 조사하였으며, ZnO 나노라드 위에 $TiO_2$가 정교하게 올라간 것을 확인한 후에 solar cell에 적용하여 그 효율을 확인하였다.

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Characteristics of Zns:Mn Thin Film Electroluminescences Prepared by a Repeated Deposition of Hot Wall Method (Hot Wall 법의 반복 증착에 의해 제작한 ZnS:Mn 박막 엘렉트로루미네센스의 특성)

  • 이상태
    • Journal of the Korean Institute of Navigation
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    • v.25 no.4
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    • pp.435-442
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    • 2001
  • A new technique to grow a manganese-doped zinc-sulfide(ZnS:Mn) has been proposed using the repeated deposition of the Hot Wall method. The optical characteristics and crystallinity for the ZnS and ZnS:Mn thin films deposited on a quartz glass substrate by the method were investigated. Also, The ZnS:Mn thin film elcetroluminescent devices were fabricated by the method to study luminescence characteristics. All films showed (111)-oriented cubic structure. By the repeated deposition, the deposition rates were decreased, and the optical characteristics and crystalline properties were improved, which clarifies that the method is effective to deposit the thin films with good crystallinity Futhermore, the crystallinity was more improved by the doping of Mn. Only one peak emission at around 585nm originating from Mn luminescent center is observed In the photoluminescent and electroluminescent spectra of ZnS:Mn films and the luminance of the ZnS:Mn-based thin film electroluminescent devices was obtained below 60cd/$m^2$ . The optical and crystalline properties, luminescence characteristics are discussed in terms of the effects of the repeated deposition and Mn-doping.

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The Effect of Boron Doped CdS Film on CdS/CdTe Solar Cell (CdS 박막의 boron doping에 따른 CdS/CdTe 태양전지 특성)

  • Lee, H.Y.;Lee, J.H.;Kim, J.H.;Park, Y.K.;Shin, J.H.;Shin, S.H.;Park, K.J.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1370-1372
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    • 1998
  • Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

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Effect of Complex Agent NH3 Concentration on the Chemically Deposited Zn Compound Thin Film on the $Cu(In,Ga)Se_2$

  • Shin, Dong-Hyeop;Larina, Liudmila;Yun, Jae-Ho;Ahn, Byung-Tae;Park, Hi-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.35.1-35.1
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    • 2010
  • The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

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Compositional Variations of Sphalerites and Their Genetic Characteristics from Gold and/or Silver Deposits in Central Korea (한국 중부지역 금은광상산 섬아연석의 조성변화와 성인적 특성)

  • Choi, Seon-Gyu
    • Economic and Environmental Geology
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    • v.26 no.2
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    • pp.135-143
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    • 1993
  • Chemical compositions of sphalerites from 25 gold and/or silver deposits in central Korea were obtained with an electron probe microanalyzer. The FeS contents of sphalerites depend generally upon the assemblage of associated iron sulphides (pyrite and/or pyrrhotite) especially. The sphalerites coexisting with pyrrhotite show a narrow range of FeS variation, but the sphalerites associated with pyrite and/or pyrrhotite have the variable and wide range of FeS contents. The sphalerites from Au-dominant deposits, which vary considerably in each deposit, are generally characterized by high CdS content and low MnS content. On the contrary, the sphalerites from Ag-dominant and Au-Ag deposits tend to be characterized by relatively high MnS and very low CdS content. Based upon the mineralogy, fluid inclusions and stable isotope data, the Au-dominant deposits were formed under higher temperature and deeper depth than the Ag-dominant and Au-Ag deposits. The results suggest the possibility that the diverse sources and evolution of ore fluid at the time of ore deposition are responsible for the deposition of Cd and Mn components in sphalerites.

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Electrodeposition of Ternary CdZnS Semiconductor Thin Films Using a S-Modified Polycrystalline Au Electrode

  • Ham, Sun-Young;Cho, Se-Jin;Lee, Ung-Ki;Jeon, So-Yeon;Shin, Ji-Cheol;Myung, No-Seung;Paeng, Ki-Jung
    • Journal of the Korean Electrochemical Society
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    • v.10 no.4
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    • pp.262-264
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    • 2007
  • This paper describes a two-step approach for the electrochemical deposition of CdZnS thin films on the polycrystalline Au electrode. Initially, an Au substrate is electrochemically modified with a sulfur layer. In the second step, the layer is electroreduced to $S^{2-}$ in the electrolyte dosed with the requisite amount of $Cd^{2+}$ and $Zn^{2+}$ ions to generate CdZnS films in situ. This approach was validated using a combination of linear sweep voltammetry and electrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have different composition depending on the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Raman spectroscopy.

RF 마그네트론 스퍼터링 방법으로 증착된 CdS박막의 기판 온도와 열처리 온도 변화에 따른 구조적 및 광학적 특성

  • Im, Jeong-U;Kim, Myeong-Seop;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.399-399
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    • 2012
  • II-V 족 화합물 반도체인 황화카드뮴(CdS)은 상온에서 2.42 eV의 밴드갭을 갖는 직접 천이형 물질로서 CdTe 또는 $CuInSe_2$와 같은 박막형 태양전지의 투과층(window layer)으로 널리 사용되고 있다. CdS 박막은 전자빔 증착법(e-beam evaporation), 화학용액증착법(chemical bath deposition), 열분해법(spray pyrolysis), 스퍼터링법(sputtering) 등으로 제작되고 있다. 이 중 스퍼터링법의 경우, 다른 증착법에 비해 조작이 간단하고 넓은 면적에서 균일한 박막을 증착할 수 있을 뿐만 아니라, 박막두께 조절이 용이하다. 따라서 본 실험에서는 RF 마그네트론 스퍼터링법으로 증착된 CdS 박막의 기판온도 및 열처리 온도변화에 따른 구조적 및 광학적 특성을 조사하였다. 기판은 RCA 기법으로 세정된 Corning Eagle 2000 유리 기판을 사용하였다. 박막 공정은 초기 진공 $1{\times}10^{-6}Torr$ 상태에서 20 sccm의 Ar 가스를 주입하고 100 W의 RF 파워, 7 mTorr의 공정 압력에서 기판 온도를 $200^{\circ}C$부터 $500^{\circ}C$까지 변화시키면서 수행하였다. 증착된 CdS 박막은 질소 분위기의 가열로(furnace)를 이용해 $300-500^{\circ}C$ 온도에서 30분간 열처리되었다. 시료들의 표면 형상은 scanning electron microscope를 사용하여 관찰하였으며, UV-vis-NIR spectrophotometer를 사용하여 400-1,000 nm 파장영역에서의 투과율을 측정하였다. 그리고 X-선 회절분석(X-Ray Diffraction)으로 결정구조를 조사하고 결정립 크기를 산출하였다.

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The Korea Institute of Information, Electronics, and Communication Technology (RF Power 변화에 의한 CdS 박막 특성에 관한 연구)

  • Lee, Dal-Ho;Park, Jung-Cheul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.14 no.2
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    • pp.122-127
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    • 2021
  • This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.

$ZnO_{1-x}S_x$ 버퍼층 건식 성장 시 스퍼터링 파워 변화에 따른 CIGS 태양전지 특성

  • Wi, Jae-Hyeong;Jo, Dae-Hyeong;Kim, Ju-Hui;Park, Su-Jeong;Jeong, Jung-Hui;Han, Won-Seok;Jeong, Yong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.684-685
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    • 2013
  • p-형 반도체인 Cu(In,Ga)$Se_2$ (CIGS) 광 흡수 층은 이보다 에너지 밴드 간격이 큰 n-형 반도체와 이종 접합을 형성한다. 흡수층과 윈도우층 사이의 결정구조 차이와 밴드갭 에너지 차이를 완화시키기 위해 버퍼층이 필요하다. 버퍼층을 형성하는 물질로 화학적 용액 성장법(Chemical Bath deposition)을 사용한 CdS가 많이 적용되어 왔으나 Cd의 유해성 및 습식 공정으로 인한 연속공정에 대한 어려움이 있다. 따라서 버퍼층을 Cd을 포함하지 않는 ZnS, $In_2S_3$, (Zn, Mg)O 등과 같은 물질로 대체하여 원자층 증착법(Atomic Layer Deposition), 펄스레이져증착법(Pulsed Laser Deposition), 스퍼터링(sputtering) 등과 같은 건식으로 성장시키는 연구가 활발히 진행되고 있다. 본 연구에서는 $ZnO_{1-x}S_x$ ($0.2{\leq}x{\leq}0.4$)를 반응성 스퍼터링으로 증착하여 큰 밴드갭 에너지와 높은 광투과율를 갖는 버퍼층을 제작하였다. CIGS 박막의 손상을 줄여주기 위하여 RF 파워는 240, 200, 150, 100 W로 변화시켰다. CIGS 태양전지의 I-V 측정 결과, RF 파워가 150 W일 때 10.7%의 가장 높은 변환 효율을 보였고, 150 W 이상에서는 파워가 증가할 때 단락전류는 감소하였으며 개방전압은 다소 증가하였다. 반면 100 W에서 단락전류는 다소 증가하는 것에 반해 개방 전압이 급격히 낮아졌다. 이것은 파워에 따라 결합되는 산소의 양이 다르기 때문으로 생각된다.

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