• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.114-114
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• 2012

Metal-oxide-semiconductor field-effect transistors (MOSFETs)의 critical dimension (CD)가 sub 45 nm로 줄어듬에 따라 기존에 gate dielectric으로 사용하고 있는 SiO2에서 발생되는 high gate leakage current 때문에 새로운 high dielectric constant (k) 물질들이 연구되기 시작하였다. 여러 가지 high-k 물질 중에서, aluminum-oxide (Al2O3)는 높은 dielectric constant (~10)와 전자 터널링 barrier height (~2eV) 등을 가지기 때문에 많은 연구가 되고 있다. 그러나 Al2O3를 anisotropic한 patterning을 하기 위해 주로 사용되고 있는 halogen-based 플라즈마 식각 과정에서 나타나는 Al2O3와 하부 layer간의 낮은 식각 selectivity 뿐만 아니라 표면에 발생되는 defect, stoichiometry modification, roughness 변화 등의 많은 문제점들로 인하여 device performance가 감소하기 때문에 이를 해결하기 위한 많은 연구들이 진행중이다. 따라서 본 연구에서는 실리콘 기판위의 atomic layer deposition (ALD)로 증착된 Al2O3를 BCl3/Ar 중성빔을 이용하여 원자층 식각한 후 식각 특성을 분석해 보았다. Al2O3 표면을 BCl3로 absorption시킨 후 Ar 중성빔으로 desorption 시키는 과정에서 volatile한 aluminum-chlorides와 boron oxychloride가 형성되어 layer by layer로 제거됨을 관찰 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.21-21
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• 2010

CIGS 박막 태양전지는 저가 기판의 사용, 원소재 소비가 적은 박막 증착, 연속공정 적용 등으로 인해 결정질 실리콘 태양전지에 비해 제조단가가 낮다. 변환효율의 경우 실험실 수준에서 최고 20%의 효율이 보고되고 있어 다결정 실리콘 태양전지와 견줄 만하다. 따라서 CIGS 박막 태양전지는 제조단가와 효율 면에서 매우 우수한 경쟁력을 가진 태양전지로 인식되고 있다. 일반적으로 CIGS 박막 태양전지는 Substrate/Mo전극/CIGS 광흡수층/CdS 버퍼층/ZnO 투명전극의 기본 구조를 가지고 있으며 다양한 공정과 디자인을 적용하여 제품이 생산되고 있다. 다양한 소재와 공정들 가운데에서 유리 소재를 기판으로 사용하면서 진공증발이나 스퍼터링과 같은 Physical Vapour Deposition(PVD)을 적용하여 CIGS 광흡수층을 제조하는 기술이 가장 보편적으로 적용되고 있다. 즉 상용화에 가장 근접해 있는 기술이라고 할 수 있으며 현재는 대량생산체제 구축을 위한 기술 개발이 진행되고 있다. 또한 종래의 기판소재와 광흡수층 제조 공정의 단점을 극복하기 위한 기술들도 개발되고 있다. 특히 유리 기판 소재를 금속이나 폴리머 소재를 대체하는 기술, PVD 공정이 아닌 비진공 공정을 적용하여 CIGS 광흡수층을 제조하는 기술 등은 응용성과 제조 단가 측면에서의 파급력이 크다고 할 수 있다. 본 발표에서는 저가 고효율 CIGS 박막 태양전지 개발을 위한 이슈들을 정리하고, 이를 해결하기 위한 국내외의 연구 개발 동향을 살펴보고자 한다. 또한 이를 바탕으로 하여 CIGS 박막 태양전지의 발전방향에 대해서 전망하고자 한다.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.222-224
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• 2006

A non-vacuum process for $Cu(In,Ga)Se_2$ (CIGS) thin film solar cells from nanoparticle precursors was described in this work CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials $(CuI,\;InI_3,\;GaI_3\;and\;Na_2Se)$ in organic solvents, by which fine CIGS nanoparticles of about 20nm in diameter were obtained. The nanoparticle precursors were mixed with organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents ud to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass simple was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar ceil applicable dense CIGS absorber layer. Complete solar cell structure was obtained by depositing. The other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.

• Korean Journal of Environmental Agriculture
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• v.30 no.2
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• pp.153-159
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• 2011

BACKGROUND: This experiment was conducted to investigate the distribution and burden characteristics of heavy metal in the rainwater sampled at Taean area, in the middle part of Korea, from April 2002 to October 2003. METHODS AND RESULTS: The relationship between concentration of heavy metal and other chemical properties in the rainwaters was also evaluated. Chemical properties in the rainwater were various differences with raining periods and years. It appeared that a weighted average pH values of rainwater was ranged from 5.0 to 5.1. Heavy metal concentrations in the rainwater were ranked as Pb > Zn > Cu > Ni > As > Cr > Cd. As compared with heavy metal concentrations of rainwater in 2002, Cu, Pb, and Zn were higher than other elements in 2003. There were positive correlation between major ionic components, such as ${NH_4}^+$, $Ca^{2+}$, $Mg^{2+}$, $K^+$, $Na^+$, ${SO_4}^{2-}$ and ${NO_3}^-$, and As, Cd, Zn, Cr, and Ni concentrations in rainwater. For heavy metal distribution of rainwater, the order of average enrichment factor was Cd > Pb > As > Cu > Zn > Ni > Cr, and these were relatively higher than the natural components such as Fe, Mg and Ca. The monthly enrichment factor were relatively high, from August to October at Taean. The monthly amount of heavy metal precipitation was high in the rainy season from July to August because of great influence of rainfall. CONCLUSION(s): The results of this study suggest that the heavy metals(Cd, Pb, As, Cu, and Zn) of rainwater is strongly influenced by anthropogenic sources rather than natural sources.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.108-111
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• 2002

CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation

• Journal of Ginseng Research
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• v.46 no.6
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• pp.771-779
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• 2022

Background: As a kind of common complication of the surgery of perianal diseases, perianal ulcer is known as a nuisance. This study aims to develop a kind of 20(S)-ginsenoside Rg3 (Rg3)-loaded hydrogel to treat perianal ulcers in a rat model. Methods: The copolymers PLGA₁₆₀₀-PEG₁₀₀₀-PLGA₁₆₀₀ were synthesized by ring-opening polymerization process and Rg3-loaded hydrogel was then developed. The perianal ulcer rat model was established to analyze the treatment efficacy of Rg3-loaded hydrogel for ulceration healing for 15 days. The animals were divided into control group, hydrogel group, free Rg3 group, Rg3-loaded hydrogel group, and Lidocaine Gel® group. The residual wound area rate was calculated and the blood concentrations of interleukin-1 (IL-1), interleukin-6 (IL-6), and vascular endothelial growth factor (VEGF) were recorded. Hematoxylin and eosin (H&E) staining, Masson's Trichrome (MT) staining, and tumor necrosis factor α (TNF-α), Ki-67, CD31, ERK1/2, and NF-κB immunohistochemical staining were performed. Results: The biodegradable and biocompatible hydrogel carries a homogenous interactive porous structure with 10 ㎛ pore size and five weeks in vivo degradation time. The loaded Rg3 can be released sustainably. The in vitro cytotoxicity study showed that the hydrogel had no effect on survival rate of murine skin fibroblasts L929. The Rg3-loaded hydrogel can facilitate perianal ulcer healing by inhibiting local and systematic inflammatory responses, swelling the proliferation of nuclear cells, collagen deposition, and vascularization, and activating ERK signal pathway. Conclusion: The Rg3-loaded hydrogel shows the best treatment efficacy of perianal ulcer and may be a candidate for perianal ulcer treatment.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.339-342
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• 2007

$Cu(In_{1-x}Ga_{x})Se_2$(CIGS)는 매우 큰 광흡수계수를 가지고 있으므로 박막형 태양전지의 광흡수층 재료로서 많은 연구가 진행되고 있다. 박막이 태양전지의 광흡수층으로 이용되기 위해서는 큰 결정크기와 평탄한 표면, 적당한 전기적 특성을 가져야 한다. 이러한 특성들은 CIGS 박막의 조성에 큰 영향을 받고 있는 것으로 보고되고 있다. 본 연구에서는 동시증발법을 이용하여 Cu/(In+Ga) 비를 0.9로 고정한 후 Ga 조성(Ga/(In+Ga)의 비 : 0.32, 0.49, 0.69, 0.8, 1)을 변화시켜 Wide band gap CIGS 박막태양전지를 만들었다. 기판은 soda line glass를 사용하였고 뒷면 전극으로는 Mo를 스퍼터링법으로 증착하였다. 또한 버퍼층으로는 기존에 쓰이고 있는 CdS를 CBD(Chemical Bath Deposition)법으로 층착시켰으며, 윈도우층으로는 i-ZnO/n-ZnO를 스파터링 법으로 층착하였다. 그리고 앞면전극으로는 Al을 E-beam 으로 증착하였다. 분석은 XRD, SEM, QE로 분석하였다. 위 실험에서 얻은 결과로는 Ga/(In+Ga)비가 증가할수록 Cu(In,Ga)Se2 박막은 회절 peak들이 큰 회절각으로 이동하였고, 이것은 Ga 원자와 In 원자의 원자반경의 차이에서 기인된 것으로 사료된다. 또한 Ga 조성이 증가할수록 단파장 쪽으로 이동하는 것을 볼 수 있으며, Voc가 증가하다가 에너지 밴드캡이 1.62 eV 이상에서는 Voc가 감소하는 것을 볼 수 있는데 이것은 Ga 조성이 증가할수록 에너지 밴드캡이 커지면서 defect level 이 존재하기 때문인 것으로 사료된다. Ga/(In+Ga)비가 1일 때의 변환효율은 8.5 %이고， Voc : 0.74 (V), Jsc : 17.2 ($mA/cm^{2}$), F.F : 66.6(%) 이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.8.2-8.2
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• 2009

구리(Cu)-인듐(In)-갈륨(Ga)-셀레늄(Se)의 4 원소 화합물 반도체인 Cu(InGa)$Se_2$ (CIGS) 태양전지 세계 최고 셀효율은 2008년 현재 19.9% 로서 박막형 태양전지 중 가장 높은 효율을 보이고 있다. 이는 다결정(폴리) 실리콘 태양전지의 20.3%와 대등한 수준이다. 이 CIGS 태양전지는 제조단가를 표준 결정형 실리콘 태양전지 대비 50% 대로 획기적으로 낮출 수 있어 가장 경쟁력이 있는 차세대 재료로 꼽히고 있다. 본 연구에서는 CIGS태양전지를 고진공 물리 증작법으로 제작하였으며 표면과 박막의 순도를 외부오염을 방지하기 위하여 후면전극, 광흡수체 및 전면전극을 동일 진공에서 제작할 수 있는 멀티 챔버 클러스터 증착 시스템을 이용하였다. 기판으로 소다라 임유리, 후면전극으로 Mo, 전면전극으로 I-ZnO/Al:ZnO 및 ITO를 이용하였다. 버퍼층으로 CdS를 chemical bath deposition (CBD)를 이용하였다. 소자는 무반사막을 사용하지 않고 Al/Ni전극 그리드를 이용하였다. 이 소자로부터 0.22 $cm^2$에서 16%의 효율을 얻었다. 각 박막층 간 계면의 분석을 전기적인 특성, ellisometry에 의한 광특성, 표면과 결정성에 대한 SEM 및 XRD의 특성을 보고한다. 또한, 대표적 화합물 반도체 박막 태양전지인 CIGS 태양전지의 기술의 현황, 학문적인 과제 및 실용화의 문제점을 발표하기로 한다.