• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.56-58
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• 1989

All-polycrystalline Cd$_1$-xZnxS/CdTe solar cells have been fabricated by coating CdTe slurries with 4.5 wt% of CdCl$_2$on the sintered Cd$_1$-xZnxS films and by sintering CdTe layer at 6$25^{\circ}C$ for lh in nitrogen atmosphere. Solar efficiency of the sintered Cd$_1$-xZnxS/CdTe solar cells increases as the Zn content increases up to x=0.06 and then decreases with further increase in the Zn content. A solar efficiency of 12.5% under a solar intensity of 76mW/$\textrm{cm}^2$ was observed in a Cd 0.94 Zn0.06S/CdTe solar cell. By optimizing the amount of CdCl$_2$in the slurry and sintering conditions, it is possible to produce Cd$_1$-xZnxS/CdTe solar cells with efficiency higher than 12%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.200-202
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• 1987

Sintered CdS films on glass substrate with low electrical resistivity and high optical transmittance have been prepared by coating and sintering method. All-polycrystalline CdS/CdTe solar cells with different microstructure and properties of CdTe layer were fabricated by coating a number of CdTe slurries, which consisted of Cd and Te powders, an appropriate amount of propylene glycol and 2 or 7.5 w/o $CdC1_2$, on the sintered CdS films and by sintering the glass-CdS-(Cd+Te) composites at various temperature. To explore the dependence of the solar efficiency on the preparation conditions of the CdTe layer, Cd powder with an average particle size of $0.3{\mu}m$ or $5{\mu}m$ was prepared. The use of Cd with finer particles forms more dense or uniform microstructure of the nuclear of CdTe during the heating. Therefore the use of Cd with finer particles improves the efficiency of the sintered CdS/CdTe solar cell by improving the microstructure of sintered CdTe layer. But the difference of solar efficiency by varing a particle size of Cd is decreased with increasing amount of $CdC1_2$ in the (Cd+Te) layer. All-polycrystalline CdS/CdTe solar cells with an efficiency of 10.2% under solar irradiation have been fabricated using a Cd with finer particles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.318.2-318.2
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• 2014

The high contact resistance is still one of the major issues to be resolved in CdS/CdTe thin film solar cells. CdTe/Metal Schottky contact induced a high contact resistance in CdS/CdTe solar cells. It has been reported that the work function of CdTe thin film is more than 5.7 eV. There has not been a suitable back contact metal, because CdTe thin film has a high work function. In a few decades, some buffer layer was reported to improve a back contact problem. Buffer layers which are Te, $Sb_2Te_3$, $Cu_2Te$, ZnTe:Cu and so on was inserted between CdTe and metal electrode. A formed buffer layers made a tunnel junction. Hole carriers which was excited in CdTe film by light absorption was transported from CdTe to back metal electrode. In this report, we reported the variation of solar cell performance with different buffer layer at the back contact of CdTe thin film solar cell.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.930-937
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• 1997

Polycrystalline CdTe thin films have been studied for photovoltaic application because of their high absorption coefficient and optimal band energy(1.45 eV) for solar energy conversion. In this study CdTe thin films were deposited on CdS(chemical bath deposition)/ITO(indium tin oxide) substrate by rf-magnetron sputtering under various conditions. Structural optical and electrical properties are investigated with XRD UV-Visible spectrophotometer SEM and solar simulator respectively. The fabricated CdTe/CdS solar cell exhibited open circuit voltage( $V_{oc}$ ) of 610 mV short circuit current density( $J_{sc}$ ) of 17.2 mA/c $m^2$and conversion efficiency of about 5% at optimal sputtering conditions.

• 태양에너지
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• 제11권3호
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• pp.74-83
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• 1991

본 논문은 substrate의 온도를 $200{\pm}1^{\circ}C$ 정도로 유지하며 진공저항 가열 증착법을 이용하여 (p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막을 제작한 후 그 전기적 특성을 조사, 비교하였다. 제작한 (p)ZnTe/(n)Si 태양전지와(n)CdS-(p)ZnTe/(n)Si 복접합 박막에 대하여 $100[mW/cm^2]$의 광조사 하에서 특성을 조사한바 다음과 같은 결과를 얻었다. 단략전류$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 개방전압[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 충실도, FF (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 변환효율[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 제작된 박막은 열처리에 의해 성능이 향상되지만 (p)ZnTe/(n)Si 태양전지는 약 $470^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서 그리고 (n)CdS-(p)ZnTe/(n)Si 복접합 박막은 약 $580^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서는 박막의 각종 구조결함으로 인한 감소현상을 나타내었다. 열처리 온도의 증가에 따라 박막의 표면저항은 감소하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.216-220
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• 1994

Polycrystalline CdS films have been prepared by coating a slurry, which consisted of CdS, 11w% CdCl$_2$ and appropriate amount of propylene glycol, on glass substrate and glass substrate coated with indium tin oxide(ITO) followed by sintering in a nitrogen atmosphere. CdTe slurries consisting of Te powder and Cd powder were coated on the sintered CdS films and ITO/CdS films and were sintered in nitrogen to prepare sintered CdS/CdTe and ITO/CdS/CdTe solar cells. The value of fill factor increased due to low series resistance and open circuit voltage decreased due to low shunt resistance in the ITO/CdS/CdTe solar cells.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1174-1177
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• 1995

In this paper, electrical properties CdS/CdTe heterojunction solar cell prepared by electron beam evaporation method were investigated. Crystal structure of CdS films deposited at substrate temperature of $50{\sim}250^{\circ}C$ was hexagonal type with preferential orientation of the (002)plane parallel to the substrate. Optical transmittance of the CdS film is increasing and resistivity is decreasing with increasing subsrate temperature. CdS/CdTe Solar cell characteristics were improved by increasing of substrate and annealing temperature. However, low efficiency due to small Jsc, Voc below 0.3 $mA/cm^2$ and 430 mV are observed. Low efficiency is contributed to be high resistance of CdTe films and contact.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.332-334
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• 1995

In this paper, structual, optical properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar cell prepared by thermal vacuum evaporation were studied. The crystal structure of CdTe films was zircblend type with preferential orientation of the (111)plane parallel to the substrate. The heat treatment appears to stabilize this structure. The result of optical absorption and transmittance show that solar radiation with energy larger than bandgap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and transmittance of the CdTe film was larger with increasing annealing temperature. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.92-93
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• 1994