• Title/Summary/Keyword: Cathode spot

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Simulation of Beta Rays from Tritium with Cathode Rays (음극선을 이용한 삼중수소 베타선 모사)

  • Kim, KwangSin;Lee, Sook-Kyung;Son, Soon-Hwan;Lim, Hoon;Lee, Dong-Hwan
    • Journal of Radiation Industry
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    • v.2 no.3
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    • pp.141-148
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    • 2008
  • Beta rays emitted from tritium in titanium tritide film were simulated with cathode rays of a scanning electron microscope to investigate the effect of beta rays from tritium on semiconductor devices. The cathode ray currents, which vary with the change of applied energy and beam spot size, were measured with Faraday cup. The current from the semiconductor device irradiated with cathode rays at various conditions was measured. The cathode ray current increased with the increase of spot size to a maximum then decreased when the spot sized increased further. The magnitude of current produced in the semiconductor device is proportional to the magnitude of cathode ray current. The magnitude of cathode ray current at each energy level was matched to the intensity of beta ray to simulate the tritium beta ray spectrum. Then the semiconductor characteristics were analyzed with I-V curves.

Failure Mode Analysis of Mo-tip EFA Cold-Cathode in CRT Spot-knocking Process (CRT의 Spot-knocking 공정에 있어서 몰리브텐 팁 전계 방출 소자 냉응극의 고장 형태 분석)

  • Ju, Byeong-Kwon;Kim, Hoon;Park, Jong-Won;Kim, Nam-Soo;Kim, Dong-Ho;Lee, Yun-Hi
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.8
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    • pp.414-418
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    • 2001
  • Failure modes of Mo-tip FEA were investigated in detail as a preliminary study for the application of Mo-tip FEA to the CRT electron-gun as a cold cathode. It was identified that the destruction of Mo-tip FEA was originated from reflowing of arc-current during the spot-knocking process followed by secondary arc between gate electrode and cathode substrate. In order to prevent Mo-tip FEA from destruction due to arc-current, two kinds of methods were suggested, that is one is to provide the by-pass of the reflow current and the other is to install a current limiter in the path of gate connection line.

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Using Magnetic Quadrupoles in Cathode-Ray Tubes

  • Sluyterman, A.A.S.
    • Journal of Information Display
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    • v.3 no.3
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    • pp.30-34
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    • 2002
  • CRTs can be improved by means of magnetic quadrupoles. Areas of improvement are convergence, spot shape, image-flatness and space charge compensation.

Using Magnetic Quadrupoles in Cathode-Ray Tubes

  • Sluyterman, A.A.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.367-370
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    • 2002
  • CRTs can be improved by means of magnetic quadrupoles. Areas of improvement are convergence, spot shape, image-flatness and space charge compensation.

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Theoretical background discussion on variable polarity arc welding of aluminum (가변 극성 알루미늄 아크 용접의 이론적 배경 고찰)

  • Cho, Jungho;Lee, Jungjae;Bae, Seunghwan;Lee, Yongki;Park, Kyungbae;Kim, Yongjun;Lee, Junkyung
    • Journal of Welding and Joining
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    • v.33 no.2
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    • pp.14-17
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    • 2015
  • Cleaning effect is well known mechanism of oxide layer removal in DCEP polarity. It is also known that DCEN has higher heat input efficiency than DCEP in GTAW process. Based on these two renowned arc theories, conventional variable polarity arc for aluminum welding was set up to have minimum DCEP and maximum DCEN duty ratio to achieve the highest heat input efficiency and weldability increase. However, recent several variable polarity GTA research papers reported unexpected result of proportional relationship between DCEP duty ratio and heat input. The authors also observed the same result then suggested combination of tunneling effect and random walk of cathode spot to fill up the gap between experiment and conventional arc theory. In this research, suggested combinational work of tunneling effect and rapid cathode spot changing is applied to another unexpected phenomena of variable polarity aluminum arc welding. From previous research, it is reported that wider oxide removal range, narrower bead width and shallower penetration depth are observed in thin oxide layered aluminum compared to the case of thick oxide. This result was reported for the first time and it was hard to explain the reason at that time therefore the inference by the authors was hardly acceptable. However, the suggested combinational theory successfully explains the result of the previous report in logical way.

A X-ray Tube Using Field Emitter Made by Multi-walled Carbon Nanotube Yarns

  • Kim, Hyun-Suk;Castro, Edward Joseph D.;Kwak, Seung-Im;Ju, Jin-Young;Hwang, Yong-Gyoo;Lee, Choong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.392-392
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    • 2011
  • Carbon nanotubes (CNT) emitter has widely become an attractive mechanism that draws growing interests for cold cathode field emission.$^{1,2}$ CNT yarns have demonstrated its potential as excellent field emitters.$^3$ Extensive simulations were carried out in designing a CNT yarn-based cathode assembly. The focal spot size dependence on the anode surface of the geometric parameters such as axial distance of the electrostatic focus lens from the cathode and the applied bias voltages at the cathode, grid mesh and electrostatic focus lens were studied. The detailed computer simulations using Opera 3D electromagnetic software$^4$ had revealed that a remarkable size of focal spot under a focusing lens triode type set-up design was achieved. The result of this optimization simulation would then be applied for the construction of the CNT yarn based micro-focus x-ray tube with its field emission characteristics evaluated.

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Fabrication of Self -aligned volcano Shape Silicon Field Emitter (음극이 자동 정렬된 화산형 초미세 실리콘 전계방출 소자 제작)

  • 고태영;이상조;정복현;조형석;이승협;전동렬
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.113-118
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    • 1996
  • Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.

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The Application and Fabrication Process of Cold Cathode Lamp Using a FEA (FEA를 이용한 Cold Cathode Lamp의 제작 공정 연구와 그 응용성)

  • Park, Suhg-Hyun;Hong, Kun-Jo;Jun, Seok-Hwan;Kwon, Sang-Jik;Lee, Neung-Hun;Park, Jae-Bum
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1800-1802
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    • 2000
  • 본 연구에서는 냉음극 발광 소자인 FEA를 이용하여 Cold Cathode Lamp 제작과 그 구조에 대해서 연구하였다. Anode plate에는 ZnO:Zn 형광체를 전기영동법으로 증착한 후 tube slabs와 anode plate를 frit glass를 이용하여 접합하였다. FEA와 substrate의 bonding, addressing을 위한 wire bonding, substrate와 집속전극, setter를 stem base의 외부전극에 연결하기 위한 spot welding, tube와 stem base를 glass melting method로 접합 공정을 하였다. 진공배기 시스템에 배기판을 연결하여 ${\sim}10^{-7}$torr까지 배기한 후 heater를 이용하여 배기관을 tip-off하였다. 최종적으로 진공을 유지하기 위해 getter를 RF 고주파로 활성화하였다. 결론적으로 lamp외 특성을 비교분석한 후 휘도 및 발광효율을 향상시키기 위한 구조절 개선과 방안을 고찰하였다.

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HCM(hollow cathode magnetron sputtering)방식으로 증착한 titanium 박막의 특성연구

  • 최효직;고대홍;최시영;최승만
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.63-63
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    • 2000
  • Deep submicron device contact hole에서의 bottom step coverage의 향상 및 SALICIDE공정의 필요성에 의해 collimated sputtering 및 ionized sputtering 등의 다양한 증착방법이 연구되어왔다. 반도체소자의 고집적화 및 미세화에 따라서 기존의 증착방법보다 더 높은 throughput을 가진 새로운 증착방법의 필요성이 대두되고 있다. Collimated sputtering방식으로 증착한 박막의 경우에는 증착속도가 느리고 collimator의 사용기간에 따른 공정조건의 변화가 단점으로 작용하였고 새로이 ionzied sputtering방식이 개발되었다. ionzied sputtering방식은 증착되는 금속 입자를 이온화시키고 기판에 바이어스를 걸어서 증착되는 입자의 방향성 및 증착속도의 향상을 얻을 수 있었다. 하지만 고집적도가 더욱 증가함에 따라서 더 높은 박막의 증착속도, bottom step coverage의 향상, 방향성의 향상과 더불어 증착되는 입자의 이온화 율의 증가 및 기존의 증착방식에 의한 박막보다 향상된 물성을 가진 박막증착의 필요성에 의해 hollow cathode magnetron sputtering방식이 연구되었다. HCM방식으로 titanium 박막을 증착하여 collimated sputtering 및 ionize sputtering 방식으로 증착한 titanium 박막과 물성을 비교해서 증착방식에 따른 박막물성의 차이를 연구하였다. 증착전에 기판온도는 30$0^{\circ}C$를 유지하였고 base pressure는 5.0$\times$10-9torr, working pressure는 5.7m torr로 유지하였다. power는 30kW를 가하여 50nm두께의 titanium박막을 증착하였다. 증착된 박막의 미세구조는 TEM 및 XRD로 분석하였다. HCM방식으로 증착한 titanium박막은 5nm두께의 비정질 층이 관찰되었고 ionized sputtering방식으로 증착한 titatnium박막에서 나타나는 것으로 보고된 silicon (002)와 titanium (0002) eledtron diffraction spot사이의 (10-10)spot은 관찰되지 않았다. 박막은 크고 작은 grain의 연속적 분포를 가졌고 HCM방식으로 증착한 titanium박막의 in-plane grain size가 다른 증착방식으로 증착한 박막에 비해 크게 관찰됨을 Plan-view TEM 분석을 통해서 확인되었다.

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Property of Focal Spot of Electron Beam Depending on the Anode Angle of X-ray Tube Using a Finite Element Method (유한요소법을 이용한 X-선관 양극각도에 의존하는 전자빔 초점 특성 연구)

  • Park, Tae-Young;Noh, Young-Il;Lee, Sang-Suk;Park, Rae-Jun;Kim, Ki-Seon
    • Journal of the Korean Magnetics Society
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    • v.25 no.2
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    • pp.52-57
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    • 2015
  • The focal spot of electron beam depending on the anode angle in the structure and major parts of the X-ray tube was investigated by the OPERA-3D/SCALAR simulation program. The simulation worked on four spaces with with two spaces, including anode and cathode of X-ray tube, by applying the finite element method analysis. The analytical model and dimension for the emission orbit of thermal electrons made from one filament of the focused X-ray cathode is affected to the penumbra of detector for the X-ray depending on any real focal spot size. The model shape of focusing cap and focusing tube with an anode target angle and a cathode filament is analyzed by the current density distribution of thermal electrons. The focusing width of thermal electrons for the X-ray tube depended on the anode angle (${\theta}$). The focusing value of electron beams at a region of anode angle having $10^{\circ}{\sim}17^{\circ}$ maintained to below value of $70{\mu}m$. The minimum focal size of the electron beam was $40{\mu}m$ at an anode angle of $15^{\circ}$. The focused X-ray tube of many variables depended on the thermionic emission of hot electrons from the target trajectory. The focusing tube will contribute to the real design of X-ray for the development of future diagnosis medical device.