• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.15-15
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• 1999

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the conventional rotating barrel. vibrational barrel (vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components, The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed that the average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value, Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components, However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. $2HD{\;}+{\;}e{\;}{\rightarrow}20H{\;}+{\;}H_2$ Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure thereby resulting to bad plating condition. 1 lot of chip was divided into two equal partion. Each portion was loaded to the same barrel one after the other. Nickel plating and tin-lead plating was performed in the same station. Portion A maintained the normal barrel vibration intensity and portion B vibration intensity was increased two steps higher. All other parameters, current, solution condition were maintained constant. Generally, plating method find procedures were carried out in a best way to maintained the best plating condition. After plating, samples were taken out from each portion. molded and polished. Plating thickness was investigated for both. To check consistency of results. 2nd trial was done now using different lot of another characteristics.

• 전기화학회지
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• 제5권3호
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• pp.131-142
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• 2002

순환전압전류 및 교류임피던스 기법을 이용하여 다결정 Pt/0.5M $H_2SO_4$ 및 0.5M LiOH수용액 계면에서 저전위 수소흡착(UPD H) 과 전위 수소흡착(OPD H)에 관한 Langmuir 흡착등온식 $({\theta}\;vs.\;E)$ 을 연구조사 하였다. 계면에서 치적중간주파수일 때 위상이동$(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ 거동은 표면피복율$(1{\geq}{\theta}{\geq}0)$ 거동에 정확하게 상응한다. 위상이 동 방법 즉 최적중간주파수일 때 위상이동 변화$({-\phi}\;vs.\;E)$는 계면에서 음극 $H_2$ 발생 반응에 관한 UPD H와 OPDH의 Langmuir흡착등온식을 결정할 수 있는 새로운 전기화학적 방법으로 사용할 수 있다 다결정 Pt/0.5M $H_2SO_4$ 수용액 계면에서 OPD H의 흡착평형상수(K)와 표준자유에너지$({\Delta}G_{ads})$는 각각 $2.1\times10^{-4}$와 21.0kJ/mol 이다. 다결정 Pt/0.5M LiOH 수용액 계면에서 K는 음전위(E)에 따라 2.7 (UPD H)에서 $6.2\times10^{-6}$ (OPD H) 또는 $6.2\times10^{-6}$(OPD H)에서 2.7 (UPD H)로 전이한다. 유사하게 ${\Delta}G_{ads}$는 E에 따라 -2.5kJ/mol (UPD H)에서 29.7kJ/mol (OPD H)또는 29.7kJ/mol (OPD H)에서 -2.5kJ/mol (UPD H)로 전이한다. K와 ${\Delta}G_{ads}$의 전이는 다결정 Pt전극 표면의 상이한 UPD H와 OPD H의 흡착부위에 기인한다. 다결정 Pt전극 계면에서 UPD H와 OPD H는 음극 $H_2$ 발생 반응에 따른 순차적 과정이 아니라, 수소 흡착부위 자체에 따른 독립적 과정이다. UPD H와 OPD H의 기준은 음극 $H_2$발생 반응과 전위가 아니라, 수소 흡착부위와 과정이다. 수용액에서 음극 $H_2$발생 반응에는 다결정 Pt선 전극이 단결정 Pt(100)원반 전극보다 더 효율적이고 유용하다 위상이동 방법은 열역학적 방법과 상충적이 아니라, 보완적이다.