• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.28 no.1
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• pp.53-60
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• 1992

In this study, cathodic protection experiment was carried out by Al-alloy sacrificial anode in marine environments which have specific resistance($\rho$) if 25~7000$\Omega$.cm and investigated protection potential, current density and loss rate of Al-alloy sacrificial anode. The main results resistance($\rho$) of 400$\Omega$.cm, the cathodic protection potential appears high about-720 mV(SCE). But below specific resistance($\rho$) of 300$\Omega$.cm, the cathodic protection potential appears low about-770 mV(SCE) and simultaneously, cathode is protected sufficiently. 2) The loss rate of Al-Alloy sacrificial anode became large with decreasing specific resistance and increasing the ratio(A sub(c)/A sub(a) of bared surface area of anode and cathode. 3) The loss rate of Al-alloy sacrificial anode(w) to the mean current density of anode(i) is as follows. w=ai+b (a, b : experimental constants)

• Corrosion Science and Technology
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• v.11 no.3
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• pp.77-81
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• 2012

Cathodic protection(CP) is widely used as a means of protecting corrosion for not only marine structures like ship hulls and offshore drilling facilities, but also underground structures like buried pipelines and oil storage tanks. The principle of CP is that the anodic dissolution of metal can be protected by supplying electrons to the cathode metal. When unprotected structures are nearby to CP systems, interference problems between unprotected and protected structures may be happened. The stray current interference can accelerate the corrosion of nearby structures. So far many efforts have been made to reduce the interference in the electric railway systems adjacent to the underground metal structures like buried pipelines and gas/oil tanks. During recent few decades the protection technologies against stray current induced corrosion have been significantly improved and a number of techniques have been developed. However, there is very limited information an marine environments. Some complex harbor structures are protected by two cathodic protection systems, i.e. sacrificial anode cathodic protection(SACP) and impressed current cathodic protection(ICCP). In this case, when the protection current from sacrificial anodes returns to the cathode through electrolyte, it passes through nearby other low resistance metal structures. In many cases the stray current of ICCP systems influences the function of SACP. In this study, the risk of stray current from the SACP system to adjacent reinforced concrete structures has been verified through laboratory experiments. Concrete and steel pile structures modeled a part of bridge have been investigated in terms of CP potential and current between the two. The variation of stray current according to the magnitude of ICCP/SACP has been studied to mitigate it and to suggest the proper protection criteria.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

• Journal of the Korean institute of surface engineering
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• v.57 no.2
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• pp.57-70
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• 2024

Nickel-cobalt-manganese (NCM) lithium-ion batteries(LIBs) are increasingly prominent in the energy storage system due to their high energy density and cost-effectiveness. However, they face significant challenges, such as rapid capacity fading and structural instability during high-voltage operation cycles. Addressing these issues, numerous researchers have studied the enhancement of electrochemical performance through the coating of NCM cathode materials with substances like metal oxides, lithium composites, and polymers. Coating these cathode materials serves several critical functions: it acts as a protection barrier against electrolyte decomposition, mitigates the dissolution of transition metals, enhances the structural integrity of the electrode, and can even improve the ionic conductivity of the cathode. Ultimately, these improvements lead to better cycle stability, increased efficiency, and enhanced overall battery life, which are crucial for the advancement of NCM-based lithium-ion batteries in high-demand applications. So, this paper will review various cathode coating materials and examine the roles each plays in improving battery performance.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1483-1490
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• 2011

The protection effect of a $ZrO_2$ coating layer on a $LiCoO_2$ thin film was characterized. A wide and smooth $LiCoO_2$ thin film offers sufficient opportunity for careful observation of the reaction at the interface between cathode (coated and uncoated) and electrolyte. The formation of a $ZrO_2$ coating on a $LiCoO_2$ thin film was confirmed by secondary ion mass spectrometry. Scanning electron and atomic force microscopy were used to characterize the surface morphologies of coated and uncoated films before and after cycling. A $ZrO_2$-coated $LiCoO_2$ film showed a higher discharge capacity and rate capability than an uncoated film. This may be associated with a surface protection effect of the coating. The surface of a pristine film was damaged during cycling, whereas the coated film maintained a relatively clear surface under the same measurement conditions. This result clearly demonstrates the protection effect of a $ZrO_2$ coating on a $LiCoO_2$ thin film.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3233-3237
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• 2010

A $Li[Ni_{0.3}Co_{0.4}Mn_{0.3}]O_2$ cathode was modified by coating with Li-La-Ti-O, and the effect of the coating thickness on their electrochemical properties was studied. The thickness of the coating on the surface of $Li[Ni_{0.3}Co_{0.4}Mn_{0.3}]O_2$ was increased by increasing the wt % of the coating material. The rate capability of the Li-La-Ti-O-coated electrode was superior to that of the pristine sample. 1- and 2-wt %-coated samples showed considerable improvement in capacity retention at high C rates. However, the rate capability of a 5-wt %-coated sample decreased. All the coated samples showed a high discharge capacity and slightly improved cyclic performance under a high cut-off voltage (4.8 V) condition. Results of a storage test confirmed that the Li-La-Ti-O coating layer was effective in suppressing the dissolution of the transition metals as it offered protection from the attack of the acidic electrolyte. In particular, the 2- and 5-wt %-coated samples showed a better protection effect than the 1-wt %-coated sample.

• Journal of the Korea Convergence Society
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• v.8 no.11
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• pp.287-292
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• 2017

The electrodeposition of Zn on the automotive parts has been adapted However, because Zn electrodeposit needs to increase thickness for corrosion protection, it has problem of destruction of electrodeposit Zn-based electrodeposit have teen studied for corrosion protection and decreasing electrodeposit thickness. Especially; Zn-Co electrodeposit have much attention In this study, the Composition of Zn-Co electrodeposit in various manufacturing condition such as temperature, current density and electrolyte content was investigated to understand effect of electrolysis condition on Co content of specimen. The results were explained by cathode overvoltage and diffusion coefficient. As the current density increases, the electrolyte temperature decreases, and as the electrolyte concentration decreases, the overvoltage of the cathode increases. As the overvoltage of the cathode increases, the concentration polarization becomes more important than the activation polarization. Concentration polarization is determined by the diffusion of the mass transfer in the diffusion layer. In a constant concentration polarization, a large amount of elements with a large diffusion coefficient is diffused. That is, as the overvoltage of the cathode increases, the Zn content having a large diffusion coefficient increases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.