• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.162-170
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• 2004

A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55％ at 900MHz operating frequency and 3V power supply voltage.

• 한국통신학회논문지
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• 제31권3A호
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• pp.356-359
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• 2006

A monolithic SiGe HBT variable gain driver amplifier(VGDA) with high dB-linear gain control and high linearity has been developed as a driver amplifier with ground-shielded microstrip lines for 5-GHz transmitters. The VGDA consists of three blocks such as the cascode gain-control stage, fixed-gain output stage, and voltage control block. The circuit elements were optimized by using the Agilent Technologies' ADSs. The VGDA was implemented in STMicroelectronics' 0.35${\mu}m$ Si-BiCMOS process. The VGDA exhibits a dynamic gain control range of 34 dB with the control voltage range from 0 to 2.3 V in 5.15-5.35 GHz band. At 5.15 GHz, maximum gain and attenuation are 10.5 dB and -23.6 dB, respectively. The amplifier also produces a 1-dB gain-compression output power of -3 dBm and output third-order intercept point of 7.5 dBm. Input/output voltage standing wave ratios of the VGDA keep low and constant despite change in the gain-control voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.183-186
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• 1999

A 900 71Hz RF band-pass amplifier for wireless communication systems is designed and fabricated. HSPICE simulation results show that the amplifier can achieve a tunable center frequency between 880 MHz and 920 MHz. The gain of designed amplifier is 19 dB at Q=88, and the power dissipation is about 61 mW under 3 V power supply by using the spiral inductor with negative-7m circuit and center frequency tunning circuit. The designed band-pass amplifier is implemented by using 0.6 um 2-poly-3-metal standard CMOS process.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.241-244
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• 2012

본 논문에서는 CMOS $0.35-{\mu}m$ 공정을 이용하여 Plastic Optical Fiber (POF) 응용분야에 적용할 수 있는 세 종류의 shunt-feedback 구조의 1-Gb/s 광 수신기를 설계하고 비교분석하였다. 기본적인 common-source transimpedance amplifier (CS-TIA), common-gate TIA (CG-TIA), 그리고 regulated-cascode TIA (RGC-TIA)를 최적화 설계하여 이득, 대역폭, 잡음특성 등을 비교분석 하였다. 시뮬레이션 테스트 결과 RGC-TIA가 CS-TIA, CG-TIA 보다 이득, 대역폭 측면에서 가장 좋은 성능을 보였으며, 잡음특성 측면에서는 CS-TIA가 가장 좋은 성능을 보였다. 각 광 수신기의 칩 사이즈는 bonding Pad를 포함하여 $0.35mm^2$이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.336-343
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• 2011

This paper introduces a simple variable gain amplifier (VGA) structure that shows an inherently dB-linear gain control property. Requiring no additional components for dB-linear control, the structure is compact and power efficient. The designed two-stage VGA shows a gain control range of 60dB with the gain error in the range of ${\pm}0.4$ dB. The power consumption including the output buffer is 20.4 mW from 1.2 V supply voltage with bandwidth of 630 MHz. The prototype was fabricated in a 0.13 ${\mu}m$ CMOS process and the VGA core occupies 0.06 $mm^2$.

• 한국정보기술학회 영문논문지
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• 제10권1호
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• pp.37-43
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• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

• 반도체공학회 논문지
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• 제2권3호
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• pp.6-12
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• 2024

본 논문에서는 130nm CMOS 공정을 이용하여 제작된 2.4GHz 차동 캐스코드 전력 증폭기에 대한 연구를 제시하고 있다. 이 전력증폭기는 무선 전력 전송 응용을 위해 설계되었으며, 단일 종단 출력을 위한 발룬 트랜스포머 설계로 구성된 두 개의 차동 스테이지를 갖추고 있다. 출력 단 뿐만 아닌 각 단 사이의 전력 매칭을 위해 발룬 트랜스포머를 활용하고 있으며, 온도 보상이 가능한 바이어스 회로를 추가하여 2.4GHz 주파수 대역에서 안정적인 바이어스 전압을 유지한다. 이를 통해 TT/40℃에서 출력 전력은 21.75 dBm 이고 전력부가효율은 40.9%를 달성한다.

• 한국정보통신학회논문지
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• 제7권1호
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• pp.106-113
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• 2003

본 논문에서는 CMOS 기술을 이용하여 2.4GHz ISM 주파수 대역의 LNA를 설계하였다. 캐스코드 증폭기를 이용하여 잡음을 억제하고 이득을 향상시켰으며 캐스캐이드의 공통 소스 증폭기의 출력을 캐스코드와 병렬로 연결되는 MOS의 입력으로 연결하여 IM3를 감소시키고자 하였다. 제안된 저잡음증폭기는 3.3V의 전원을 공급하는 Hynix 0.35$\mu\textrm{m}$ 2-poly 4-metal CMOS 공정을 이용하여 설계되었다. HSPICE Tool을 이용하여 시뮬레이션 하여 13dB의 이득과 1.7dB의 잡음지수, 약 8dBm의 IIP3, -3ldB와 -28dB의 입ㆍ출력 매칭특성을 확인하였다. 이 때 reverse isolation은 -25dB, 전력사용은 4.7mW이었다. Mentor를 이용한 Layout은 2${\times}$2$\mu\textrm{m}$ 이하의 크기를 갖는다.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.575-581
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• 2013

The self-cascode (SC) structure has low output voltage swing and high output resistance. In order to implement a simple and better SC structure, the native-$V_{th}$ MOSFETs which has low threshold voltage($V_{th}$) is applied. The proposed SC structure is designed using a qualified industry standard $0.18-{\mu}m$ CMOS technology. Measurement results show that the proposed SC structure has higher transconductance as well as output resistance than single MOSFET. In addition, analog building blocks (e.g. current mirror, basic amplifier circuits) with the proposed SC structure are investigated using by Cadence Spectre simulator. Simulation results show improved electrical performances.

• 디지털산업정보학회논문지
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• 제20권2호
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• pp.63-74
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• 2024

This Paper presents a resistive wideband fully differential low-noise amplifier (LNA) designed using a noise-cancellation technique for TV tuner applications. The front-end of the LNA employs a cascode common-gate (CG) configuration, and cross-coupled local feedback is employed between the CG and common-source (CS) stages. The moderate gain at the source of the cascode transistor in the CS stage is utilized to boost the transconductance of the cascode CG stage. This produces higher gain and lower noise figure (NF) than a conventional LNA with inductor. The NF can be further optimized by adjusting the local open-loop gain, thereby distributing the power consumption among the transistors and resistors. Finally, an optimized DC gain is obtained by designing the output resistive network. The proposed LNA, designed in SK Hynix 180 nm CMOS, exhibits improved linearity with a voltage gain of 10.7 dB, and minimum NF of 1.6-1.9 dB over a signal bandwidth of 40 MHz to 1 GHz.