• 해양환경안전학회지
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• 제26권5호
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• pp.576-585
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• 2020

본 연구는 기존 선박에 자외선 (UV) 평형수처리장치(BWMS)를 설치 한 경우, 수치 계산을 통해 평형수 처리시간의 증가를 정량적으로 조사하였다. 계산 결과 배수량 55,000톤 가스 운반선의 평형수 처리시간은 UV BWMS 미설치 및 유량 제어 기능 없이 2.152 시간이었다. 평형수 처리시간은 UV BWMS 설치 후 14.2 % 증가했으며, 유량 제어 기능까지 고려 시 20.4 % 증가했습니다. 실제 조건들을 고려하면 UV BWMS 설치 후 평형수 처리시간은 기존 평형수처리시간 대비 최소 30 % 정도 증가할 것으로 예상됩니다. 따라서 업계 관계자는 평형수 처리시간 증가로 인한 선박 운영 손실을 최소화하기 위하여 UV BWMS 선정시 본선의 실제 평형수펌프 용량과 UV BWMS의 유동 에너지 손실을 충분히 고려하는 것이 좋습니다. 또한 BWMS 설치 후 평형수 처리시간 증가를 최소화하기 위해서는 더 큰 용량의 BWMS, 더 큰 파이프 및 내부 코팅이 있는 파이프 등의 사용을 고려할 수 있습니다.

• Environmental Engineering Research
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• 제10권5호
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• pp.213-226
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• 2005

To treat wastewater efficiently by a one-step process of nitrogen removal, a new bacterial strain producing $N_2$ gas from ${NH_4}^+$ under an aerobic condition was isolated and identified. The cell was motile and a Gram-negative rod, and usually occurred in pairs. By 16S-rDNA analysis, the isolated strain was identified as Enterobacter asburiae with 96% similarity. The isolate showed that the capacity of $N_2$ production under an oxic condition was approximately three times higher than that under an anoxic condition. Thus, the consumption of ${NH_4}^+$ by the isolate was significantly different in the metabolism of $N_2$ production under the two different environmental conditions. The optimal conditions of the immobilized isolate for $N_2$ production were found to be pH 7.0, $30^{\circ}C$ and C/N ratio 5, respectively. Under all the optimum reaction conditions, $N_2$ production by the immobilized isolate resulted in reduction of ORP with both the consumption of DO and the drop of pH. The removal efficiencies of $COD_{Cr}$, and TN were 56.1 and 60.9%, respectively. The removal rates of $COD_{Cr}$, and TN were the highest for the first 2.5 hrs with the removal $COD_{Cr}/TN$ ratios of 32.1, and afterwards the rates decreased as reaction proceeded. For application of the immobilized isolate to a practical process of ammonium removal, a continuous operation was executed with a synthetic medium of a low C/N ratio. The continuous bioreactor system exhibited a satisfactory performance at 12.1 hrs of HRT, in which the effluent concentrations of ${NH_4}^+$-N was measured to be 15.4 mg/L with its removal efficiency of 56.0%. The maximum removal rate of ${NH_4}^+$-N reached 1.6 mg ${NH_4}^+$-N/L/hr at 12.1 hrs of HRT(with N loading rate of $0.08\;Kg-N/m^3$-carrier/d). As a result, the application of the immobilized isolate appears a viable alternative to the nitrification-denitrification processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.264-264
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• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• Tuberculosis and Respiratory Diseases
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• 제51권2호
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• pp.155-160
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• 2001

한냉글로불린혈증에 의한 급성호흡곤란증후군은 극히 드문 것으로 보고되었다. 저자 등은 B형 간염을 가진 환자에서, 한냉글로불린혈증과 그에 인한 급성호흡곤란 증후군이 발생한 1예를 경험하였기에 보고하는 바이다.

• 대한화학회지
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• 제54권6호
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• pp.696-700
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• 2010

매우 작은 유리구슬(직경 $100{\mu}m$이하)위에 이이스트를 공유결합시킨 bio컬럼을 제작하여 $Sb^{3+}$와 $Sb^{5+}$를 선택적으로 분리하고 연속적 수소화물 발생법을 이용하여 감도를 개선하였다. 최적 용리조건은 용리액 0.8 M 질산으로 흐름속도 1.0 mL $min^{-1}$이며 수소화물 발생의 최적조건은 HCl 2 M, 환원제로 $NaBH_4$ 3% (w/v), 흐름속도는 0.83 mL $min^{-1}$, 수소화물을 운반하는 아르곤기체의 흐름속도는 50 mL $min^{-1}$ 이었다. 이러한 조건에서 두 화학종의 분리시간은 각각 112초와 354초였다. $200{\mu}L$의 시료를 사용하였을 때 감도는 10 여배 개선되었고 검출한계는 $Sb^{3+}$ 및 $Sb^{5+}$에 대하여 각각 3.0 ppb와 7.0 ppb 이었다. 표준시료를 제작하여 분석한 결과, 정확한 결과를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 대한핵의학회지
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• 제24권2호
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• pp.237-243
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• 1990

Pulmonary embolism demands rapid and accurate diagnosis. And ventilation imaging has greatly improved the diagnostic accuracy of pulmonary embolism in addition to perfusion imaging. Agents currently used include xenon-133, krypton-81m and technetium-99m radioaerosols. However radioactive gases are compromised by availability and cost for krypton-81m, radiation dose, gamma energy and non?physiologic behaviour for xenon-133. Radioaerosols of technetium-99m componds are rapidly cleared from the lung after inhalation, and their relative low effeciency (specific radioactivity) and wide distribution of particle sizes make them also suboptimum. A new ventilation agent, Technegas is a suspension of structured graphite ellipsoids with diameter below 20nm, labelled with $^{99m}Tc$ in a carrier gas of Argon. This report describes the authors' clinical experience with Technegas. This is the first reported clinical study of this agent in Korea. A comparison of Technegas and $^{99m}Tc-DTPA$ aerosol was performed in 12 patients with various pulmonary diseases such as COPD, pulmonary tuberculosis and pleural effusion. All patients were studied with $^{99m}Tc-DTPA$ aerosol inhalation and Technegas ventilation. In both studies image quality was assessed (1) semiquantitatively by scoring bronchial and gastric activity, (2) subjectively by direct visual comparison of peripheral lung images and (3) quantitatively by computing the peripheral penetration index(PI) for each lungs. The bronchial activites were seen in 7 out of 12 cases with $^{99m}Tc-DTPA$ aerosol and in 5/12 with Technegas. The gastric activities were seen in 5/12 and 1/12 cases respectively. The average values of PI were 61.26% with $^{99m}Tc-DTPA$ aerosol and 69.20% with Technegas (p>0.05). Using $^{99m}Tc-DTPA$ aerosol, COPD patients showed deposition in the central airways with poor visualization of the peripheral areas of the lungs. In Technegas studies these phenomena were less prominent, and the examination is well tolerated by pateients and requires only a minimum of patient cooperation. With superiority of easy availability and handling, better physical characteristics and favorable Image quality, Technegas is a Promising agent for lung ventilation scanning.

• 한국진공학회지
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• 제19권5호
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• pp.377-384
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• 2010

본 연구에서는 수직 가열로(vertical furnace)를 이용하여 $1150^{\circ}C$의 온도에서 섬유형태의 고순도 단일벽 탄소나노튜브(singlewalled carbon nanotubes)를 합성하였다. 탄소나노튜브의 구조에 영향을 미치는 실험 변수인 페로센(ferrocene)의 농도, 혼합용액의 주입 속도, 싸이오펜(thiophene)의 농도, 수소($H_2$)의 주입 양을 조절하여 고순도의 단일벽 탄소나노튜브 섬유의 최적화 된 대량 합성 조건을 확립하였다. 또한 각 요인들이 탄소나노튜브의 생성에 미치는 영향에 대해 논의하였다. 분석 결과, 최적화 된 조건에서 1.16~1.64 nm의 직경을 가진 고순도의 단일벽 탄소나노튜브가 다발(bundle) 구조로 정렬되어 있음을 확인할 수 있었다.

• 센서학회지
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• 제4권1호
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• pp.51-63
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• 1995

Chemical bath deposition 방법으로 다결정 $CdS_{1-x}Se_{x}$ 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회질 무늬를 측정하여 결정 구조를 밝혔다. $550^{\circ}C$로 열처리한 시료의 X-선 회절 무늬로부터 외삽법으로 구한 격자 상수는 CdS의 경우 $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ 였으며 CdSe인 경우는 $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ 였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼 응답, 감도(${\gamma}$), 최대 허용 소비전격 및 응답시간을 측정하였다.