• 한국환경보건학회지
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• 제35권5호
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• pp.402-410
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• 2009

This study was carried out to examine the optimal analytical method for determination of urinary toxic arsenic (inorganic arsenic and its metabolites) by HG-AAS (hydride generation-atomic absorption spectrometry). In the analysis of SRMs (standard reference materials), method E (addition of 0.4% L-cysteine to pre-reductant and use 0.04M HCl as carrier acid) showed the most accurate results compared with the reference values. In the analysis of 30 urinary samples, analytical results were significantly different depend on the component of pre-reductant and the concentration of carrier acid. When the concentration of carrier acid was higher, the analytical result was lower. The recovery rates of MMA (monomethylarsonic acid) and DMA (dimethylarsenic acid) were varied by the concentration of pre-treatment acid and carrier acid and hydride generation reagents. When the concentration of carrier acid was 1.62 M (5% HCl), the recovery rates of DMA was 1%. The recovery rates of MMA and DMA in method E (=V) were 102% and 100%, respectively. The results of this study suggest that the component and concentration of pre-reductant and carrier acid must be carefully adjusted in the analysis of urinary arsenic, and method E is recommendable as the most precise analytical method for determination of urinary toxic arsenic.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.53-53
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• 2010

Graphene comes into the spotlight as an emergent device material on account of its high carrier mobility reflecting its massless Dirac fermion behavior. Chemical technique to control reversibly the carrier concentration of semiconducting graphene for the achievement of a large-area graphene device has been strongly required. Here we show that the adsorptions of a metal and a molecule can manipulate the carrier concentration of single-layer graphene, epitaxially grown on SiC, which was directly observed using angle-resolve photoemission spectroscopy. These results will shed light on the researches for the very large scale integration of a graphene device. Furthermore, the carrier concentration changes can be applied to a highly sensitive gas sensor or a detector for an specific binding between an antigen and an antibody.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• 한국의류산업학회지
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• 제5권5호
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• pp.545-549
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• 2003

Dyeing properties such as migration of disperse dye and color fastness of 4 types of the carrier[Carrier-I(methyl napthalene). Carrier-II(chloro benzene). Carrier-III(aromatic ether) and Carrier-IV(o-phenyl phenol)] were evaluated for the study. For the results, the optimum dyeing time and concentration of the carrier was 30min at $110^{\circ}C$ and 2g/l, respectively. The redyeing ratio of the fabric samples treated with Carrier-II and III was higher than that treated with Carrier-I and IV, thus, if was conclude that the redyeing ratio of the samples treated with Carrier-II and III was excellent. The light fastness of the samples treated with Carrier-III and IV was higher than that of Carrier-I and II in order of 2-4 grades. However, there were little changes in terms of washing and sublimation and rubbing fastness for the samples.

• Biotechnology and Bioprocess Engineering:BBE
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• 제3권1호
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• pp.24-31
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• 1998

The separation and concentration of L-phenylalanine (L-Phe) using a supported liquid membrane (SLM) is investigated. A cation complex agent, di-2-ethylhexyl phosphoric acid (D2EHPA), is used as a carrier in the SLM with n-Heptane as a solvent. The reaction order and equilibrium constant in the formation reaction of L-phe-carrier complex are obtained from the extraction experiment. A mathematical model for a carrier mediated counter transport process is proposed to estimate the diffusion coefficient of L-phe-carrier complexly in the liquid membrant. Permeation experiments of L-phe using a SLM are performed under various operating conditions and optimum conditions for the transport of L-phe are obtained. Concentration of L-phe in the strip phase against its concentration is observed. Transport rate of glucose through liquid membrane is less than that of L-phe in the competitive transport of L-phe and glucose. And the existence of glucose reduced the transport rate of L-phe. The performance of separation with continuous strip phase is increased due to the dilution effect in the strip phase.

• 한국막학회:학술대회논문집
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• 한국막학회 1995년도 제3회 심포지움 (분리막 연구의 최신동향)
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• pp.57-71
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• 1995

A simple mathematical model for gacilitated mass transport with a fixed site carrier membrane was derived by assuming an instantaneous, microscopic concentration (activity) fluctuation, The concentration fluctuation, developed due to reversible chemical reaction between carrier and solute, could acuse the higher chemical potential gradient and the facilitated transport. For mathematical formulation, an analogy was employed between the mass transfer for the facilitated transport with fixed site carrier membrane and the electron transfer in a parallel resistor-capacitor (RC) circuit. For the single RC model, it was assumed that a single capacitor represented the total carrier and a solute could not inter-diffuse between matrix and carrier, allowing only two diffusional pathways, This assumption was relaxed by adopting a serial combination of the parallel RC circuit. Here, a solute diffuses in two elements (matrix or carrier) can exchange its pathway, exhibiting four diffusional pathways. The current models were examined against experimental data and the agreement was exceptional.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.27-27
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• 2008

The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

• 한국표면공학회지
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• 제32권3호
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• pp.276-280
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• 1999

Electrical properties of electrochromic (EC) InN thin films prepared by rf ion plating were studied. There was a correlation between the electrical properties and the electrochromism in the InN films, particularly, carrier concentration changes were responsible for the electrical resistivity changes of the films due to the electrochromism. These carrier concentration changes were caused by chemisorbed hydroxyl groups and protons. From these results, it was proved that the carrier concentration changes of the InN films was responsible for the electrochromism in the visible and near-infrared region.

• Membrane and Water Treatment
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• 제9권1호
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• pp.23-31
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• 2018

In this study, a new method called as multi-dropped liquid membrane (MDLM) which is more practical and more effective than other liquid membrane techniques is applied for transport of Zn(II) has been studied. HCl as the stripping solution and D2EHPA dissolved in kerosene as the membrane solution, has been examined. The effects of stripping solution concentration, carrier concentration, temperature and pH in the feed phase on the transport of Zn(II) have also been investigated. As a result, the optimum transport conditions of Zn(II) were obtained, i.e., the concentration of HCl solution was 0.25 M, the concentration of D2EHPA was $8{\times}10^{-3}M$, and pH value in the donor phase was 5.00. Under the optimum conditions, the transport percentage of Zn(II) was up to >99% during the transport time of 80 min when the initial concentration of Zn(II) was $120mgL^{-1}$. The activation energy is calculated as $5.30kcalmol^{-1}$. The value of calculated activation energy indicates that the process is diffusionally controlled by Zn(II) ions. The experiments have demonstrated that D2EHPA derivative is a good carrier for Zn(II) transport through MDLM in the study.

• 한국재료학회지
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• 제15권9호
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• pp.604-607
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• 2005

Dependence of the crystallinity, surface roughness, carrier concentration, carrier mobility, electrical resistivity and transmittance of Al-doped ZnO films deposited on glass substrates by RF-magnetron sputtering on effects of the ratio of the RF power for AlZnO to that for ZnO (R) have been investigated. X-ray diffraction spectra show strong preferred orientation along the c-axis. The full width at half maximum (FWHM) of the ZnO (002) peak decreases slightly as R increases in the range of R<1.0, whereas it increases substantially in the range of R>1.0. Scanning electron micrographs (SEM) show that the ZnO film surface becomes coarse as R increases. The carrier concentration and the carrier mobility in the ZnO thin film are maximal for R=1.5 and 1.0, respectively. The electrical resistivity is minimal for R=1.0 The transmittance of the ZnO:Al film tends to increase, but to decrease slightly in the range of R>0.5. It may be concluded that the optimum R value is 1.0, considering all these analysis results. The cause of the changes in the structure and physical properties of ZnO thin films with R are also discussed.