• ETRI Journal
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• v.36 no.1
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.175-188
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• 2011

As complementary metal-oxide semiconductor (CMOS) continues to scale down deeper into the nanoscale, various device non-idealities cause the I-V characteristics to be substantially different from well-tempered metal-oxide semiconductor field-effect transistors (MOSFETs). The last few years witnessed a dramatic increase in nanotechnology research, especially the nanoelectronics. These technologies vary in their maturity. Carbon nanotubes (CNTs) are at the forefront of these new materials because of the unique mechanical and electronic properties. CNTFET is the most promising technology to extend or complement traditional silicon technology due to three reasons: first, the operation principle and the device structure are similar to CMOS devices and it is possible to reuse the established CMOS design infrastructure. Second, it is also possible to reuse CMOS fabrication process. And the most important reason is that CNTFET has the best experimentally demonstrated device current carrying ability to date. This paper discusses and reviewsthe feasibility of the CNTFET's application at this point of time in integrated circuits design by investigating different types of circuit blocks considering the advantages that the CNTFETs offer.

• ETRI Journal
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• v.43 no.4
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• pp.717-727
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• 2021

In this study, new multiplier and adder method designs with multiplexers are proposed. The designs are based on quaternary logic and a carbon nanotube field-effect transistor (CNTFET). The design utilizes 4 × 4 multiplier blocks. Applying specific rotational functions and unary operators to the quaternary logic reduced the power delay produced (PDP) circuit by 54% and 17.5% in the CNTFETs used in the adder block and by 98.4% and 43.62% in the transistors in the multiplier block, respectively. The proposed 4 × 4 multiplier also reduced the occupied area by 66.05% and increased the speed circuit by 55.59%. The proposed designs are simulated using HSPICE software and 32 nm technology in the Stanford Compact SPICE model for CNTFETs. The simulated results display a significant improvement in the fabrication, average power consumption, speed, and PDP compared to the current bestperforming techniques in the literature. The proposed operators and circuits are evaluated under various operating conditions, and the results demonstrate the stability of the proposed circuits.

• ETRI Journal
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• v.43 no.4
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• pp.728-745
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• 2021

Carbon nanotube field-effect transistors (CNTFETs) have been widely studied as a promising technology to be included in post-complementary metal-oxide-semiconductor integrated circuits. Despite significant advantages in terms of delay and power dissipation, the fabrication process for CNTFETs is plagued by fault occurrences. Therefore, developing a fast and accurate method for estimating the reliability of CNTFET-based digital circuits was the main goal of this study. In the proposed method, effects related to faults that occur in a gate's transistors are first represented as a probability transfer matrix. Next, the target circuit's graph is traversed in topological order and the reliabilities of the circuit's gates are computed. The accuracy of this method (less than 3% reliability estimation error) was verified through various simulations on the ISCAS 85 benchmark circuits. The proposed method outperforms previous methods in terms of both accuracy and computational complexity.