• 한국세라믹학회지
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• 제39권5호
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• pp.438-445
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• 2002

본 연구에서는 $PbO-TiO_2-SiO_2-BaO-ZnO-Al_2O_3-CaO-B_2O_3-Bi_2O_3-MgO$계의 유리를 $1,400{\circ}C$에서 용융시킨 후, 급랭, 분쇄하여 glass frit을 제조하였다. Glass frit 분말을 일축가압성형한 후 $750~1,000{\circ}C$의 온도범위에서 2시간 동안 소성 및 결정화 하였다. Glass frit의 결정화는 $750{\circ}$ 전후의 온도에서 시작되었고, 저온에서의 주된 결정상은 $Al_2O_3$와 hexagonal celsian($BaAl_2Si_2O_8$)이었다. 소성온도가 높아지면서 monoclinic celsian, $ZnAl_2O_4,\;Zn_2SiO_4,\;CaTi(SiO_4)O,\;TiO_24 등이 주된 결정상으로 나타났고, 특히 celsian은 hexagonal에서 monoclinic으로 상전이가 발생하였다. 그리고 15wt%의 PbO를 첨가한 glass frit에만 $PbTiO_3-CaTiO_3$ 고용체가 나타났다. 1MHz 대역에서 유전특성을 살펴본 결과 유전상수는 11~16이었고, 유전손실은 0.020 미만이었다. 그러나 15wt%의 PbO를 첨가한 glass frit의 경우는 $PbTiO_3-CaTiO_3$ 고용체 결정상의 존재로 유전상수가 17~26으로 높았고, 유전손실은 0.010~0.015로서 다른 조성들에 비하여 우수한 특성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.19-24
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• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.