• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.66-73
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• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.74-81
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• 1991

The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.4
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• pp.49-59
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• 2004

In this paper the automatic diameter control system of the CZ-150 Crystal Grower is proposed in order to achieve a good performance for the industry applications in MEMC Korea. The effectiveness of the design parameters is verified by means of the computer simulations and the proposed controllers showed the better performance than the conventional PD controllers which always have steady-state errors.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.234-234
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• 2006

Novel molecular glassy POSS-based material having carbazole moiety as a photo- and electroactive group was synthesized, and its thermal, morphological, electrochemical, and optical properties were investigated. POSS having carbazole (POSS-Cz) was found to form easily amorphous glassy film by cooling the melt sample or by spin coasting onto glass substrate. POSS-Cz showed monomeric emission even in solid film, which suggests that carbazole moiety can be isolated even in solid state.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.200-206
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• 2000

In a 200 mm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced then the variations of the pulling rate and the formation behaviors of grow-in defects were compared. The diameters of the OSF-ring and the FPD area were affected by the fluctuation in the region above 1100℃. The COP density depended on the diameter of the OSF-ring. ΔOi and BMD were affected by the fluctuation in the region near 1000Δ. As the result, when a macroscopic fluctuation in pulling rate is introduced, the quality of crystal in the region of 150 mm from the growth interface should be reviewed carefully because it can be affected by the fluctuation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.767-773
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• 1988

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.157-161
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• 2000

In a 200nm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced an then the variations of the pulling rate and the position of OSF-ring were compared each other. The formation behavior of OSF-ring in the effective volume, defined as the region between the growth interface position -α and the growth interface position +α, is most affected by the pulling rate fluctuation. To understand the correct effect of a macroscopic pulling rate fluctuation, its cumulative effect in the effective volume should be considered. A new concept of modeling for it was proposed here.

• Journal of the Chungcheong Mathematical Society
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• v.31 no.1
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• pp.29-42
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• 2018

In this paper, we investigate the stability of two functional equations f(ax+by + cz) - abf(x + y) - bcf(y + z) - acf(x + z) + bcf(y) - a(a - b - c)f(x) - b(b - a)f(-y) - c(c - a - b)f(z) = 0, f(ax+by + cz) + abf(x - y) + bcf(y - z) + acf(x - z) - a(a + b + c)f(x) - b(a + b + c)f(y) - c(a + b + c)f(z) = 0 by applying the direct method in the sense of Hyers and Ulam.

• Kyungpook Mathematical Journal
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• v.55 no.3
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• pp.587-595
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• 2015

In this article, we will examine the Diophantine equation $ax^6+by^3+cz^2=0$, for arbitrary rational integers a, b, and c in Gaussian integers and find all the solutions of this equation for many different values of a, b, and c. Moreover, two equations of the type $x^6{\pm}iy^3+z^2=0$, and $x^6+y^3{\pm}wz^2=0$ are also discussed, where i is the imaginary unit and w is a third root of unity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.42-47
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• 2000

The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H$_2$ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during $H_2$annealing process also has been observed.