• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.32-32
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.193-198
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• 2011

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2419-2425
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• 2007

New poly(cyclopenta[def]phenanthrene) (PCPP)-based conjugated copolymers, containing carbazole units as pendants, were prepared as the electroluminescent (EL) layer in light-emitting diodes (LEDs) to show that most of them have higher maximum brightness and EL efficiency. The prepared polymers, Poly(2,6-(4-(6-(Ncarbazolyl)- hexyl)-4-octyl-4H-cyclopenta[def]phenanthrene)) (CzPCPP10) and Poly(2,6-(4-(6-(N-carbazolyl)- hexyl)-4-octyl-4H-cyclopenta[def]phenanthrene))-co-(2,6-(4,4-dioctyl-4H-cyclopenta[def]phenanthrene)) (CzPCPP7 and CzPCPP5), were soluble in common organic solvents and used as the EL layer in light-emitting diodes (LEDs) of configuration with ITO/PEDOT/polymer/Ca/Al device. The polymers are thermally stable with glass transition temperature (Tg) at 77-100 °C and decomposition temperature (Td) at 423-457 °C. The studies of cyclic voltammetry indicated same HOME levels in all polymers, although the ratios of carbazole units are different. In case of PLEDs with configuration of ITO/PEDOT/CzPCPPs/Ca/Al device, The EL maximum peaks were around 450 nm, which the turn-on voltages were about 6.0-6.5 V. The maximum luminescence of PLEDs using CzPCPP10 was over 4400 cd/m2 at 6.5 V, which all of the maximum EL efficiency were 0.12 cd/A. The CIE coordinates of the EL spectrum of PLEDs using CzPCPP10 was (0.18, 0.08), which are quite close to that of the standard blue (0.14, 0.08) of NTSC.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.119-125
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• 1992

Oxygen segregation in horizontal-magnetic-field-applied Czochralski (HMCZ) silicon crystals has been studied as a function of magnetic field strength (B) and crucible rotation rate (C). Along the axis of 57mm din. <100> crystals grown under B=2, 3, 4 kG and C=4-15rpm, the oxygen distribution was usually saw-tooth shaped and fluctuated unevenly. Compared to the conventional CZ method, this result seems to indicate that the horizontal magnetic field, at levels used in the present experiment, had a destabilizing influence on oxygen transport to the growth interface. On the other hand, as C increased, the oxygen fluctuation lessened, and [0] increased overall. At B=2 kG, an oxygen profile in a level of 27-36 ppma was achieved by a programmed ramp of C. Oxygen precipitation behavior of the HMCZ silicon during a simulated device manufacturing process was compared and found to be inferior to that of typical CZ silicon. The uneven oxygen profile in the as-grown state was identified as the major source of poor precipitation uniformity in the HMCZ silicon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.91-96
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• 2023

To verify the quality of bubbles during the use of quartz glass crucibles (QC), an appropriate accelerated testing method was proposed. The bubble state of discarded waste crucibles obtained from actual Czochralski (Cz) processes was analyzed, and optimal heat treatment conditions were suggested by varying temperature, pressure, and time using the QC test piece. By subjecting the samples to heat treatment at 1450℃, 0.4 Torr, and 40 hours, it was possible to control the bubble size and density to a similar level as those generated in the actual Cz process. In particular, by selecting a relatively lower pressure of 0.4 Torr compared to the typical range of 10~20 Torr applied in the Cz process, the time required for accelerated bubble formation testing could be reduced. However, it was determined that increasing the heat treatment temperature to 1550℃ led to the phenomenon of Ostwald ripening, resulting in larger bubbles and a rapid decrease in density. Therefore, it was concluded that it was not a suitable condition for the desired b ake test.

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.31-31
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.272-278
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• 2013

In this study, a c-axis displacement and an internal stress of the sapphire crystal of 300 mm length have been analyzed numerically and the crystal length having no sub-grain defects have been predicted. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The simulation results show that the c-axis displacement difference between the original hot zone and others originated from the sub-grain defect formations in the sapphire ingot. When the crystal grown by CZ (Czochralski) grower using the modified hot zone, the crystal length having no sub-grain defects was increased about 57 mm maximum than the original one. When the simulation results compared with the experimental one, the predicted crystal length having no sub-grain defects were well corresponded with the experiment one in c-axis wafer of the 300 mm sapphire ingot. Therefore the sapphire crystal of 250 mm length having no sub-grain defects was successfully grown by CZ process.

• New & Renewable Energy
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• v.8 no.1
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• pp.24-34
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• 2012

The main issue of boron doped p-type czochralski-grown silicon solar cells is the degradation when they are exposed to light or minority carriers injection. This is due to the meta-stable defect such as boron-oxygen in the Cz-Si material. Although a clear explanation is still researching, recent investigations have revealed that the Cz-Si defect is related with the boron and the oxygen concentration. They also revealed how these defects act a recombination centers in solar cells using density function theory (DFT) calculation. This paper reviews the physical understanding and gives an overview of the degradation models. Therefore, various methods for avoiding the light-induced degradation in Cz-Si solar cells are compared in this paper.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

• Korean Journal of Food Science and Technology
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• v.43 no.2
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• pp.220-223
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• 2011

Human basophilic KU812F cells express a high affinity for IgE receptor, $Fc{\varepsilon}RI$, which plays an important role in immunoglobulin E (IgE)-mediated allergic reactions. Using the human basophilic KU812F cells, we assessed the inhibitory effects of the ethanolic extract from Chrysanthemum zawadsaki(CZ) on $Fc{\varepsilon}RI$ ${\alpha}$ chain expression. Flow cytometric analysis showed that cell surface $Fc{\varepsilon}RI$ ${\alpha}$ chain expression was suppressed when the cells were cultured with CZ extract. RT-PCR analysis showed that the mRNAs for $Fc{\varepsilon}RI$ ${\alpha}$ chain decreased by the treatment of CZ extract. Moreover, CZ extract was also observed to result in a reduction in the release of histamine from anti-$Fc{\varepsilon}RI$ antibody (CRA-1)-stimulated cells. These results suggest that CZ extract may exert anti-allergic activity through down-regulation of $Fc{\varepsilon}RI$ ${\alpha}$ chain expression and a subsequent decrease in histamine release.