• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.115-115
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• 2015

Many efforts have been devoted on chemical modification of graphene layer to modulate its electrical properties. In the previous report, laser irradiation on the CYTOP (Amorphous Fluoropolymer) covered graphene layer induces chemical modification wherein carbon fluoride is formed on the graphene surface. This results in the insulating I-V characteristics, which have been attracting much research interests on it. However, the direct analytical evidence of the fluoride formation on graphene surface is not yet studied. In this work we investigated what happened on the CYTOP/graphene interface during photon irradiation using spatially resolved photoemission spectroscopy method. It is found that the soft x-ray (614 eV) induces desorption of fluoride atoms from the CYTOP and change di-fluoride form to mono-fluoride. As the photo-induced fluorine desorption is continue strong dipole field generated by initial di-fluoride forms is gradually decreased, resulting in the overall binding energy shift of the C 1s core levels. Both photo-modified CYTOP and CYTOP starts to desorb above $286^{\circ}C$ (~ 0.047 eV), which means that no strong chemical interaction between CYTOP and graphene is established.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.142.1-142.1
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• 2013

The patterning and doping technique enables graphene to replace the metal electrode as a charge injection layer in the pentacene based thin film transistor. However, it is known that pentacene molecules form lying-down coordination on the graphene surface. Pentacene thin film showed that the highly occupied molecular orbital is 0.2~0.4 eV lower in the standing up coordination than in the lying down coordination. Here, we report the formation of standing-up coordination and lowered HOMO level of the pentacene layer grown on the graphene layer doped with CYTOP.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.198.1-198.1
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• 2014

Many efforts have been devoted on chemical modification of graphene layer to modulate its electrical properties. In the previous report, laser irradiation on the CYTOP(perfluoropolymer) doped graphene layer induces chemical modification of it, resulting in the insulating I-V characteristics. While the results strongly denoted C-F bond formation after irradiation, the detailed process of photo-induced chemical change is not known yet. To probe this, we utilized synchrotron based SPEM (scanning photoelectron emission spectroscopy) in NSRRC, Taiwan. We irradiate the sample by photon of 614 eV in a stepwise manner as a function of time. As photon irradiation increased, difluoride moieties in the CYTOP was broken, and then formed mono-fluoride with carbon atoms consisting graphene layer.