• Title/Summary/Keyword: CVD-IBS

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PHOTOCATALYTIC DEGRADATION OF 2-CHLOROPHENOL USING TiO₂THIN FILMS PREPARED BY CHEMICAL VAPOR DEPOSITION AND ION BEAM SPUTTERING METHOD

  • Jung, Oh-Jin;Kim, Sam-Hyeok;Jo, Ji-Eun;Hwang, Chul-Ho
    • Environmental Engineering Research
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    • v.7 no.4
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    • pp.227-237
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    • 2002
  • Chemical vapor deposition (CVD), ion beam sputtering (IBS) and sol-gel method were used to prepare TiO$_2$ thin films for degradation of hazardous organic compounds exemplified by 2-chlorophenol (2-CP). The influence of supporting materials and coating methods on the photocatalytic activity of the TiO$_2$ thin films were also studied. TiO$_2$ thin films were coated onto various supporting materials including steel cloth (SS), copper cloth, quartz glass tube (QGT), and silica gel (SG). Results indicate that SS (37 μm)- TiO$_2$ thin film prepared by IBS method improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 μm) is found to be the best support.

Optical Characteristics of Iron Silicide Films Prepared by Plasma CVD (Plasma CVD에 의해 제조된 Iron Silicide 박막의 광학적 특성)

  • Kim, Kyung-soo;Yoon, Yong-soo;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.10 no.3
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    • pp.343-348
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    • 1999
  • The iron silicide films were prepared by chemical vapor deposition method using rf-plasma in variations of substrate temperature. rf-power, and ratio of $SiH_4$ and Fe-precursor. While iron silicide films are generally grown by ion beam synthesis (IBS) method of multi-step process, it is confirmed that iron silicide or $\beta$-phase consolidated $Fe_aSi_bC_cH_d$ was formed by one-step process in this study. The characteristics of films is variable because the different amounts of carbon and hydrogen was involved in the films as a function of dilute ratio of Fe-precursors and silane. It was shown that the different characteristics of films in carbon and hydrogen following the ratio of Fe-precursor and silane. The optical gap energy of films fabricated according to substrate temperature was invariant because active site brought in desorption of hydrogen was limiled. When rf-power was above 240 watt, the optical gap energy turned out to have high values because of dangling bonds increased by etching.

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