• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.532-536
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• 2007

Carbon nanotube (CNT) properties, produced using a magnetic null discharge (MND) plasma production technology, were investigated. We firstly deposited the Fe layer 200 nm in thickness on Si substrate by the magnetic null discharge sputter method at the substrate temperature of $300도C$, and then prepared CNTs on the catalyst layer by using the magnetic null discharge (MND) based CVD method. CNTs were deposited in a gas mixture of CH4 and N2 at a total pressure of 1 Torr by the MND-CVD method. The substrate temperature and the RF power were $650^{\circ}C$ and 600W, respectively. The characterization data indicated that the proposed source could synthesize CNTs even under relatively severe conditions for the magnetic null discharge formation.

• Journal of Environmental Science International
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• v.7 no.5
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• pp.669-677
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• 1998

A porous $\alpha$-alumina tube of 2.5 mm O.D. and 1.9 mm I.D. was used as the support of an inorganic membrane. Macropores of the tube, about 150 nm in size, were plugged with silica formed by thermal decomposition of tetraethylorthosilicate at $600^{\circ}C$. The forced cross-flow CVD method that reactant was evacuated through the porous wall of the support was very effective in plugging macropores. The H$_2$ permeance of the prepared membrane was of the order of $10^{-8}/ molㆍs^{-1}/ㆍm^{-2}/. Pa{-1}$/, while the $N_2$ permeance was below $10^{-11}/ molㆍs^{-1}/ㆍm^{-2}/ㆍPa^{-1}$/ at $600^{\circ}C$. This was comparable to that of silica-modified Vycor glass whose size was 4 nm.

• Environmental Engineering Research
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• v.7 no.4
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• pp.227-237
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• 2002

Chemical vapor deposition (CVD), ion beam sputtering (IBS) and sol-gel method were used to prepare TiO$_2$ thin films for degradation of hazardous organic compounds exemplified by 2-chlorophenol (2-CP). The influence of supporting materials and coating methods on the photocatalytic activity of the TiO$_2$ thin films were also studied. TiO$_2$ thin films were coated onto various supporting materials including steel cloth (SS), copper cloth, quartz glass tube (QGT), and silica gel (SG). Results indicate that SS (37 μm)- TiO$_2$ thin film prepared by IBS method improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 μm) is found to be the best support.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.277-283
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• 2019

We have examined minimization of the number of impurity particles by replacing the load-lock chamber materials of the chemical vapor deposition equipment through optimization of the pumping method in the deposition chamber. In order to reduce the number of impurity particles in the chamber, the load-lock spacer material was changed from monomer casting nylon to Torlon. Furthermore, we controlled the pumping speed and number of pumping ports, which resulted in a reduction in the impurity particle generation from 2.67% to 0.52%. This study revealed that the selection of the material for the parts of a chemical vapor deposition chamber can minimize particle generation, thereby presenting a method of optimization method of the chemical vapor deposition chamber.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.17-27
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• 2000

This paper presents deposition and characterization of hydrogenated microcrystalline silicon (${\mu}c$ -Si:H) films on low cost glass substrate by Hot Wire CVD(HWCVD). The HWCVD ${\mu}c$ -Si:H films had deposition rates ranging from 2${\AA}$/sec to 35${\AA}$/sec with the variations of preparation conditions, which was 10 times higher than that of the films obtained from the conventional PECVD method. From the Raman spectroscopy, the prepared silicon films were found to be composed of the mixture of crystalline and amorphous phases. The crystalline volume fraction and average crystallite size, obtained from the Raman To mode peak near 520cm$^{-1}$, were 37-63% and 6-10 nm, respectively. The conductivity activation energy($E_a$) of the ${\mu}c$ -Si:H films, representing the difference of conduction band and Fermi level in an intrinsic semiconductors, increased from 0.22eV to 0.68eV with increasing pressure from 30mTorr to 300mTorr. The increase of $E_a$ with pressure indicates that the deposited films have properties close to intrinsic semiconductors, which is also proved with low dark conductivity of the ${\mu}c$ -Si:H deposited at 300mTorr. The tungsten concentration incorporated into films was about $6{\times}10^{16}atoms/cm^3$ in the samples prepared at wire temperature of 1800$^{\circ}C$.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.378-379
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• 2006

The carbon thin film was developed by the CVD method using the carbon source of toluene with the stream of argon gas at $800{\sim}1100^{\circ}C$ for 1 hour. Developed carbon thin films have the material loading of 0.27 mg($800^{\circ}C$), 0.80 mg($900^{\circ}C$), 2.3 mg($1000^{\circ}C$), and 2.9 mg($1100^{\circ}C$) for the disk of 15 mm diameter on single side. The characteristics of carbon thin film as the anode of thin film battery were evaluated using Li|C coin cell. Li|C($1100^{\circ}C$) coin cell has the first specific discharge and charge capacity of 953 mAh/g and 374 mAh/g, respectively, resulting the first Ah efficiency of 39.3 %. Capacity retention of the 5th cycle was 93.2 % indicating good cycleability. The carbon thin film prepared by CVD shows good specific capacity and cycleability, but low Ah efficiency.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.81-85
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• 2022

Mist-CVD is known to have advantages of low cost and high productivity method since the precursor solution is misting with an ultrasonic generator and reacted on the substrate under vacuum-free conditions of atmospheric pressure. However, since the deposition distribution is not uniform, various efforts have been made to derive optimal conditions by changing the angle of the substrate and the position of the outlet to improve the result of the preceding study. Therefore, in this study, a deposition distribution uniformity model was derived through the shape and position of the substrate support and the conditions of inlet flow rate using the particle tracking method of computational fluid dynamics (CFD). The results of analysis were compared with the previous studies through experiment. It was confirmed that the rate of deposition area was improved from 38.7% to 100%, and the rate of deposition uniformity was 79.07% which was higher than the predicted result of simulation. Particle tracking method can reduce trial and error in experiments and can be considered as a reliable prediction method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.372-373
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• 2009

In this work, the effects of substrate on the formation of YBaCuO by CVD were investigated by observing the microstructure and the crystallographic orientation and by measuring the temperature dependence of electrical resistance. Source materials used to synthesize the YBaCuO superconducting film were beta-diketone chelates of Y, Ba and Cu. These chelates were evaporated at $137-264^{\circ}C$. The source vapors of Y, Ba and Cu were transported into hot zone by using Ar gas and $O_2$ gas was introduced separately.

• Proceedings of the Membrane Society of Korea Conference
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• 2002.05a
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• pp.35-41
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• 2002

Dense oxygen ionic conducting materials can be used for oxygen separation membranes at high temperatures. However, they show relatively low permeation flux because of their large resistances. To reduce resistances and improve the oxygen permeation flux, thin dense yttria-stabilized-zirconia (YSZ)/Pd composite dual-phase membranes were fabricated by a new approach that combines the reservoir method and chemical vapor deposition (CVD). A thin porous YSZ layer was coated on a porous alumina support by dip-coating the YSZ suspension. A continuous Pd phase was formed inside pores of the YSZ layer by the reservoir method. The residual pores of the YSZ/Pd layer were plugged with yttria/zirconia by CVD to ensure the gas tightness of the membranes. The oxygen permeation fluxes through these composite membrane were 2.0$\times$10$^{-8}$ mol/cm$^2$.s and 4.8$\times$10$^{-8}$ mol/cm$^2$.s at 105$0^{\circ}C$ when air and oxygen were used as the permeate gases, respectively. These oxygen permeation values are about 1 order of magnitude higher than those of pure YSZ membranes prepared under similar conditions.