• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.1-4
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• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.117-121
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• 1992

Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.246-249
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• 1997

Diamond thin films were deposited on Si wafer from a mixture of CE$_4$ and H$_2$ by RF Plasma CVD. The films were de77sited under the following conditions : discharge power of 500w, H$_2$ flow rate of 30sccm, chanter pressure of 20∼50Torr, and CH$_4$ concentration of 0.5∼2%. The deposition time was 30∼40 hours because of low growth rate. The deposited films were characterized by Scanning Electron Microscopy and X-ray Diffraction method.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.89-93
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• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.5
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• pp.1679-1688
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• 1996

Laser flash technique was applied to measure thermal properties of FGM made by a CVD method. System stability and reproducibility of this measuring system were proved and calibrated with glassy carbon used as reference material. Specimens was prepared by cutting FGM diagonally. Measurements were performed for a wide range of temperatures up to 1500K. Relative heat capacity of the FGM specimen was scattered with in $\pm$13% at room temperature and at high temperature above 1200K, and $\pm$3% at medium temperature range. On the other hand, thermal diffusivity data showed excellent reproducibility and stability through the whole temperature range. In conclusion, the multi-target radiometer can be applied to measure the thermal properties of non homogeneous materials like FGM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.197-206
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• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.