• Journal of Biomedical Engineering Research
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• v.17 no.4
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• pp.443-448
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• 1996

Sequential brain SPECT imaging has been used to assess the cerebral perfusion reserve(CPR) in cerebrovascular diseases(UD). We have realized parametric images of CPR using deadtime correction of gamma camera and normalized difference ratio. For the anatomical localization of CPR, the parametric images were registered to the contours of the cerebral regions using optimal threshold method, which showed to reflect the CPR more reliably and distinctively than the simple subtraction. We conclude that the quantitative estimation of CPR using normalized difference ratio image could be useflll for the diagnosis and prognostic assessment of CVD.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.43-49
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• 2013

${\beta}$-SiC was deposited onto a graphite substrate by a LPCVD method and the effect of the crystallographic orientation on mechanical properties of the deposited SiC was investigated. The deposition was performed at $1300^{\circ}C$ in a cylindrical hot-wall LPCVD system by varying the deposition pressure and total flow rate. The texture and crystallographic orientation of the SiC were evaluated by XRD. The deposition rate increased linearly with the gas flow rate from 800 sccm to 1600 sccm. It also increased with the pressure but became saturated above a total pressure of 3.3 kPa. In the range of 3.3 - 10 kPa, the preferred orientation changed from the (220) and (311) planes to the (111) plane. The hardness and elastic modulus showed maximum values when the SiC had the (111) preferred orientation, though it gradually decreased upon a change to the (220) and (311) preferred orientations.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1030-1033
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• 2003

This paper presents the deposition characterization of polycrystalline silicon films by the HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}C$ (Tf), 30 mTorr and $2{\sim}12%$ for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.

• Progress in Superconductivity
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• v.7 no.1
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• pp.52-57
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• 2005

[ $YBa_{2}Cu_{3}O_y$ ] superconducting films were prepared on $LaAlO_3$(100) single crystal substrate by spray pyrolysis method. The precursor solution was prepared by dissolving nitrate powders in de-ionized water. Both of ultrasonic and concentric nebulizers were used in order to generate fine droplets of precursor solution. C-axis oriented films were obtained at deposition temperature of $750\~850^{\circ}C$ and working pressure of 100 Torr and 500 Torr. In case of ultrasonic nebulizer, films showed rough and porous surface morphology due to formation of enormous droplets, while smooth and dense films were obtained for concentric nebulizer. A transport $J_c$ value of $0.43\;MA/cm^2$ at 77 K and self field was achieved on $LaAlO_3$(100) single crystal substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.99-100
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• 2005

We have grown carbon nanotubes (CNTs) with a microwave plasma chemical vapor deposition (MPECVD) method, which has been regard as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. We use methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 60 nm thick Ni catalytic layer were deposited on the TiN coated glass substrate by RF magnetron sputtering method. In this work, we report the effects of pressure on the growth of CNTs. We have changed pressure of processing (10 $\sim$ 20 Torr) deposition of CNTs. SEM (Scanning electron microscopy) images show diameter, length and cross section state CNTs.

• Progress in Superconductivity
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• v.12 no.1
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.25-30
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• 2010

Si nanowire/multiwalled carbon nanotube nanocomposite arrays were synthesized. Vertically aligned Si nanowire arrays were fabricated by Ag nanodendrite-assisted wet chemical etching of n-type wafers using $HF/AgNO_3$ solution. The composite structure was synthesized by formation of a sheath of carbon multilayers on a Si nanowire template surface through a thermal CVD process under various conditions. The results of Raman spectroscopy, scanning electron microscopy, and high resolution transmission electron microcopy demonstrate that the obtained nanocomposite has a Si nanowire core/carbon nanotube shell structure. The remarkable feature of the proposed method is that the vertically aligned Si nanowire was encapsulated with a multiwalled carbon nanotube without metal catalysts, which is important for nanodevice fabrication. It can be expected that the introduction of Si nanowires into multiwalled carbon nanotubes may significantly alter their electronic and mechanical properties, and may even result in some unexpected material properties. The proposed method possesses great potential for fabricating other semiconductor/CNT nanocomposites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.501-506
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• 2006

Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.