• Proceedings of the Korean Environmental Sciences Society Conference
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• 2001.11a
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• pp.186-187
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• 2001

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1329-1334
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• 1988

A new method was developed for growing oxidation film by thermal reaction of $NH_3$ and $O_2$. The growth rate increased with the increase of partial pressure of $NH_3$. Optical transparency of the growth film was 12% at the wave number 1100 $cm^{-1}$ compared with 17% by thermal dry oxidation method, and the quality was much better. In C-V characteristic curve, $Q_{OX}$ was almost equal to $Q_{SS}$ and no hysteresis phenomena was observed. n-MOS transistors fabricated with this new method showed $I_D$-$V_{DS}$ characteristics better than thermal dry oxidation method.

• Tribology and Lubricants
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• v.21 no.3
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• pp.107-113
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• 2005

Micro/nano adhesion and friction properties of self-assembled monolayers (SAMs) with different head- and end-group were experimentally studied according to the coating methods. Various kinds of SAM having different spacer chains (C10 and C18), head-group and end-group were deposited onto Si-wafer by dipping and chemical vapour deposition (CVD) methods under atmospheric pressure, where the deposited SAM resulted in the hydrophobic nature. The adhesion and friction properties between tip and SAM surfaces under nano scale applied load were measured using an atomic force microscope (AFM) and also those under micro scale applied load were measured using a ball-on-flat type micro-tribotester. Surface roughness and water contact angles were measured with SPM (scanning probe microscope) and contact anglemeter respectively. Results showed that water contact angles of SAMs with the end-group of fluorine show higher relatively than those of hydrogen. SAMs with the end-group of fluorine show lower nano-adhesion but higher micro/nanofriction than those with hydrogen. Water contact angles of SAMs coated by CVD method show high values compared to those by dipping method. SAMs coated by CVD method show the increase of nano-adhesion but the decrease of nano-friction. Nano-adhesion and friction mechanism of SAMs with different end-group was proposed in a view of size of fluorocarbon molecule.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1597-1599
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• 2004

Carbon nanotubes (CNTs) are grown on the TiN-coated silicon substrate by varying the thickness of Ni and Invar426 catalyst layers at 600$^{\circ}C$ using an inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Invar426 catalysts are formed using an RF magnetron sputtering system with various deposition periods. Characterization using various techniques, such as FESEM, HRTEM, and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of grown CNTs are strongly changed by the kind and thickness of catalyst materials. It is also seen that Ni catalysts would be more desirable for vertical-alignment of CNTs compared with Invar426 catalysts. However, the CNTs using Invar426 catalysts display much better electron emission capabilities than those using Ni catalysts. The physical reason for all the measured data obtained are discussed to establish the relationship between structural properties and field-emissive properties of CNTs.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.1-17
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• 2013

Since their first discovery, carbon nanotubes (CNTs) have become a material central to the field of nanotechnology. Owing to their splendid physical, structural and chemical properties, they have the potential to impact a wide range of applications, including advanced ceramics, nanoelectronic devices, nanoscale sensors, solar cells, battery electrodes, and field emitters. This review summarizes the synthetic methods of preparing CNTs and focuses on the chemical vapor deposition (CVD) method, especially catalytic CVD. In order to stabilize and disperse the catalyst nanoparticles (NPs) during synthesis, zeolite was implemented as the template to support metal-containing NPs, so that both CNTs in the bulk and on a 2D substrate were successfully synthesized. Despite more challenges ahead, there is always hope for widespread ever-new applications for CNTs with the development of technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2003.11a
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• pp.368-376
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• 2003

In this research, DLC thin films are produced as several hundred nm thickness by PE-CVD method. And then these thin films are estimated tribological characteristics to find out useful possibilities as a protecting film for high-quality function and life extension at MEMs by mechanical properties observation . These are measured thickness and residual stress of DLC coating. Compared after measuring friction coefficient, adhesion force, hardness, cohesive force of coating films. As results all test, we can decide several conclusions. First, friction coefficient decreased, as the load increased. otherwise, friction coefficient increased, as thickness of coating film increased under low load$(1\~50mN)$. Secod, adhesion force increased as thickness of coating films. Third, hardness of coating film is affected by substrate coating film when it is less than thickness of 300nm and it has general hardness of DLC coating film when it is more than thickness of 500nm. Fourth, cohesive force of coating film is complexly affected by hardness, adhesion force, residual stress, etc.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1475-1480
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• 2004

Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.