• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.575-578
• /
• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band Microwave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_1$ $_{dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a P $_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a P $_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.210-219
• /
• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.6
• /
• pp.691-699
• /
• 2012

In this paper, we present a Vt-DRO with a low phase noise, which is achieved by improving the coupling structure between the dielectric resonator and microstrip line. The Vt-DRO is a closed-loop type and is composed of 3 blocks; dielectric resonator, phase shifter, and amplifier. We propose a mathematical estimation method of phase noise, using the group delay of the resonator. By modifying the coupling structure between the dielectric resonator and microstrip line, we achieved a group delay of 53 nsec. For convenience of measurement, wafer probes were inserted at each stage to measure the S-parameters of each block. The measured S-parameter of the Vt-DRO satisfies the open-loop oscillation condition. The Vt-DRO was implemented by connecting the input and output of the designed open-loop to form a closed-loop. As a result, the phase noise of the Vt-DRO was measured as -132.7 dBc/Hz(@ 100 kHz offset frequency), which approximates the predicted result at the center frequency of 5.3 GHz. The tuning-range of the Vt-DRO is about 5 MHz for tuning voltage of 0~10 V and the power is 4.5 dBm. PFTN-FOM is -31 dBm.