• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.22 no.1
• /
• pp.169-174
• /
• 2018

In this paper, a design method for a wideband LPF for harmonic suppression applications is investigated. The proposed wideband LPF is comprised of four circular slot pairs with different diameters, which are added symmetrically in the ground plane of a CPW transmission line. Four circular slot pairs act as a defected ground structure and provide a wideband low pass characteristic. The circular slot with the smallest diameter is located at the side of port 1, and the diameter of the circular slot is increased as it goes toward port 2. The low pass characteristics of each circular slot are compared with the proposed wideband LPF. The final designed LPF was fabricated on FR4 substrate, and its characteristics were tested. The measured S11 characteristic was maintained at over -3.3 dB in the frequency range of 1.89-20.00 GHz band, whereas the S21 characteristic was less than -21.4 dB in the frequency range of 2.66-20.00 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.11
• /
• pp.93-98
• /
• 2003

In this paper, we designed a printed square loop antenna for operating of PCS and IMT2000 band. The proposed antenna has omni-directional radiation patterns with broad bandwidth, similar to the conventional antenna, to easy feed on composing single planar. We obtain an ideal impedance matching and increase bandwidth. An antenna bandwidth is about 150MHz(1.74∼l.89〔GHz〕) at 1$^{st}$ resonance frequency and 290MHz(1.95∼2.24GHz) at 2$^{nd}$ resonance frequency on VSWR(equation omitted)1.5, and then we can obtain not only 1.73∼l.87 〔GHz〕 PCS band but also 1.92∼2.17 (GHz) IMT2000 band. band.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.411-412
• /
• 2008

The high performance 94 GHz MMIC(Monolithic Micro-wave Integrated Circuit) single balanced mixer was designed and fabricated, using MHEMT structure based diodes and a CPW(Coplanar Waveguide) tandem coupler. A novel single-balanced structure of diode mixer is proposed in this work, where a 3-dB tandem coupler with two section of parallel-coupled line. Implemented air-bridge crossover structures achieve wide frequency operation and the fabricated mixer exhibits excellent LO-RF isolation, larger than 30 dB, in the 5 GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1972-1975
• /
• 2002

In this paper, we have proposed low temperature co-fired ceramic (LTCC) based packaging for RF MEMS devices. The packaging structure is designed and evaluated with 3D full field simulation. 50 ${\Omega}$ matched coplanar waveguide(CPW) transmission line is employed as the test vehicle to evaluate the performances of the proposed package structure. The line is encapsulated with the LTCC packaging lid and connected to the via feed line. To reduce the insertion loss due to the packaging lid, the cavity with via post is formed in the packaging lid. The performances of the package structure is simulated with the different cavity depth and via-to-via length. Simulation results show that the proposed package structure has reflection loss better than 20 dB and insertion loss lower than 0.1 dB from DC to 30 GHz with the cavity depth and via-to-via length of 300 ${\mu}m$ and 350 ${\mu}m$, respectively. To realize the designed package structure, the cavity patterning is tested using the sandblast of LTCC.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.575-578
• /
• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band Microwave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_1$ $_{dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a P $_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a P $_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.210-219
• /
• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.69-74
• /
• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.11
• /
• pp.1225-1232
• /
• 2009

In this paper, a parabolic edge planar monopole antenna for indoor DTV reception is presented. The antenna has broadband property with the planar monopole and ground of parabolic edges. It is designed close to self-complementary structure as changing curvature of edges of monopole and ground. Monopole and ground conductors of the antenna are on the same plane, and excited through CPW feeding. It is fabricated on an FR4 dielectric substrate of $\varepsilon_r=4.4$, and the dimension is $40\;mm{\times}200\;mm{\times}1.6\;mm$. Return loss is larger than 10 dB in 470~806 MHz. Maximum gain is 1.86 dBi on E-plane at 810 MHz and 3.86 dBi on H-plane at 600 MHz.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.5
• /
• pp.197-203
• /
• 2003

In this paper, we have presented millimeter-wave high conversion gain quadruple subharmonic mixers adopting the cascode harmonic generator The subharmonic mixers were successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide(CPW) structures. Measured output of 1st, 2nd and 4th harmonics of the fabricated cascode 4th harmonic generator are -21.42 dBm, -32.65 dBm and -13.45 dBm, respectively, for an input power of 10 dBm at 14.5 GHz. We showed that the highest conversion gain of 3.4 dB has obtained thus far at a LO power of 13 dBm from the fabricated subharmonic mixers. The millimeter-wave subharmonic mixer also ensure a high degree of isolation showing -53.6 dB in the LO-to-IF and -46.2 dB in the LO-to-RF, respectively, at a frequency of 14.5 GHz. The high conversion gain achieved in this work is the first report among the millimeter-wave subharmonic mixers.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.11
• /
• pp.21-27
• /
• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.