• Applied Chemistry for Engineering
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• v.2 no.4
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• pp.330-339
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• 1991

The acid properties of $V_2O_5-TiO_2/SiO_2$ catalysts and the partial oxidation of o-xylene into phthalic anhydride had been investigated in order to relate the acid property of catalyst to the catalytic activity. $V_2O_5$ had both weak (V=O) and strong (V-O-V) acid sites which gave pyridine desorption peaks at $230^{\circ}C$ and $300^{\circ}C$, respectively, and the amount of weak acid sites at $230^{\circ}C$ decreased with the increase of calcination temperature. On the other hand, the amount of weak acid sites increased considerably by increasing the amount of $TiO_2$ to the $V_2O_5-TiO_2/SiO_5$, and the maximum value was shown at 20 and higher mole % of $TiO_2$ with respect to $SiO_2$. In the oxidation of o-xylene, $V_2O_5-TiO_2/SiO_2$ enhandced more the total conversion and the selectivity to phthalic anhydride than $V_2O_5/SiO_2$, and the higher $TiO_2$ ratio to $V_2O_5$ increased the total conversion but could not change the selectivity to phthalic anhydride. Weak acid sites (V=O) led o-xylene to partial oxidation producing phthalic anhydride by adsorbing o-xylene weakly, while acid sites (V-O-V) led it to total oxidation producing CO and $CO_2$ by adsorbing it strongly.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.114-119
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• 1998

등방성 피치계 탄소섬유를 Co$_{2}$gas중에서 등온산화시켜 활성탄소섬유를 제조하였다. 산화된 섬유의 비표면적은 BET장치를 이용하여 측정하였다. Burn-off가 증가하여도 반응속도는 크게 감소하지 않았으며, 80$0^{\circ}C$와 90$0^{\circ}C$에서 산화된 섬유의 비표면적은 40%-60%의 burn-off에서 급격히 증가하다가 60%이상에서 감소하였다. 110$0^{\circ}C$에서 산화된 시편은 40%이상 burn-off되어도 비표면적은 크게 증가하지 않고 60%를 지나서도 계속해서 표면적이 증가하는 현상을 나타내었다. 100$0^{\circ}C$에서 60.4%의 burn-off가 일어난 산화섬유의 비표면적은 3,614$m^2$/g로 가장 큰 값이 얻어졌다. 등방성 탄소섬유는 미세한 흑연결정립들이 무질서한 배향을 하고 있으며, 미세기공벽으로 작용할 수 있는 결정립층이 많기 때문에 활성탄소섬유 제조를 위한 원료로 적합하다고 판단된다.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.656-662
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• 2007

Fuel reformer using plasma and shift reactor for CO oxidation were designed and manufactured as $H_2$ supply device to operate a polymer electrolyte membrane fuel cell (PEMFC). $H_2$ selectivity was increased by non-thermal plasma reformer using GlidArc discharge with Ni catalyst simultaneously. Shift reactor was consisted of steam generator, low temperature shifter, high temperature shifter and preferential oxidation reactor. Parametric screening studies of fuel reformer were conducted, in which there were the variations of the catalyst temperature, gas component ratio, total gas ratio and input power. and parametric screening studies of shift reactor were conducted, in which there were the variations of the air flow rate, stema flow rate and temperature. When the $O_2/C$ ratio was 0.64, total gas flow rate was 14.2 l/min, catalytic reactor temperature was $672^{\circ}C$ and input power 1.1 kJ/L, the production of $H_2$ was maximized 41.1%. And $CH_4$ conversion rate, $H_2$ yield and reformer energy density were 88.7%, 54% and 35.2% respectively. When the $O_2/C$ ratio was 0.3 in the PrOx reactor, steam flow ratio was 2.8 in the HTS, and temperature were 475, 314, 260, $235^{\circ}C$ in the HTS, LTS, PrOx, the conversion of CO was optimized conditions of shift reactor using simulated reformate gas. Preheat time of the reactor using plasma was 30 min, component of reformed gas from shift reactor were $H_2$ 38%, CO<10 ppm, $N_2$ 36%, $CO_2$ 21% and $CH_4$ 4%.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.166-170
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• 2001

Dopants implanted in silicon substrate affect the reaction between cobalt and silicon substrate. Phosphorous, unlike boron and arsenic, suppressing the reaction between cobalt and silicon induces CoSi formation during a low temperature thermal treatment instead of CoSi₂formation. The CoSi layer should move to the silicon substrate to fill the vacant volume that is generated in the silicon substrate due to the silicon out-diffusion into the cobalt/CoSi interface. The movement of CoSi at gate sidewall spacer region is suppressed by a cohesion between gate oxide and CoSi layers, resulting in a void formation at the gate sidewall spacer edge.

• Journal of the Korean Chemical Society
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• v.34 no.5
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• pp.460-464
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• 1990

Proton behavior was investgated for the redox reaction of trans-[$Co(en)_2(NO_2)Cl]^+$ with aqueous Fe(II) in acidic solution by UV/vis-spectrophotometric method. The reaction order of proton is first one and the rate constant(k$_H^+$) is 6.7 ${\times}\;10^{-1}L^2/mol^2{\cdot}min$. The values of $E_a$, ${\{Delta}H^{\neq}$, ${\{Delta}S^{\neq}$ are 14.5 Kcal/mol, 13.8 Kcal/mol and -18.3e.u., respectively. As the result of analysis of kinetic data, it has been found that this reaction proceeds through inner-sphere mechanism.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.1
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• pp.15-21
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• 2023

To prepare zinc oxide powder, three types of sodium-based alkali precipitants such as NaOH, Na₂CO₃, NaOH/NaHCO₃ were compared to the differences in the manufacturing process of zinc oxide powder from zinc precipitate products like intermediates with the consideration of thermodynamic reaction. The prepared zinc precipitate products by the reaction with the sodium-based alkali precipitant were confirmed to respectively hydroxy zinc chloride (Zn₅(OH)₈Cl₂·H₂O) and zinc carbonate hydroxide (Zn₅(OH)₆(CO₃)₂·H₂O) from XRD analysis. Zinc oxide particles were compared in heat treatment at 800℃ according to sodium-based alkali precipitants. The mixed NaOH and NaHCO₃ of alkali precipitant reaction was contributed to synthesize the more uniform zinc oxide particles.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.499-502
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• 2008

고정층반응기에서 니켈이 치환된 하이드로탈사이트($Ni_3Mg_3Al_2(CO_3)(OH)_{{16}{\cdot}n}H_2O$ ; n=3$\sim$5)를 합성하고 여기에 세리아를 첨가 후 소성하여 얻은 촉매를 사용하여($Ce_xNi_3$-HTlc ; x=0.3$\sim$1.2) 메탄의 부분산화 반응실험을 수행하였다. 세리아가 첨가되지 않은 촉매는 반응 초기 활성이 세리가가 소량 첨가된 ($Ce_{0.3}Ni_3$-HTlc) 촉매보다 우수하였으나 장시간 반응에서는 차차 활성이 저하되었으나, $Ce_{0.3}Ni_3$-HTlc의 활성은 30시간까지 일정하게 유지 되었다. 세리아 함량이 많아 질수록 촉매 활성은 점차 저하되었으며, $Ce_{1.2}Ni_3$-HTlc 는 촉매활성이 매우 낮았다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.157-158
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• 2015

$Ni-TiO_2$ 복합체를 전기도금법으로 제조할 때, pH, 전류밀도 변화에 따른 $TiO_2$ 부피분율을 측정하였다. 산화물의 부피분율은 pH가 높아질수록 낮아지고, 전류밀도가 증가하면, $100mA/cm^2$에서 최댓값을 가진 뒤에 감소하였다. 기존의 산화물 공석량 예측식 모델에 수소발생반응을 고려하여 적용한 결과, 기존 모델보다 실험값과 예측값의 정확도가 더 높았다. 따라서, 산화물이 전기도금층에 공석될 때에는 수소이온의 환원반응과 니켈이온의 환원반응을 종합적으로 고려하여야 한다.

• KSBB Journal
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• v.23 no.3
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• pp.245-250
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• 2008

The treatment of a model wastewater containing quinoline in an integrated wet oxidation-aerobic biological treatment was investigated. Partial wet oxidation under mild operating conditions was capable of converting the original quinoline to biodegradable organic acids such as nicotinic, formic and acetic acid, the solution of which was subjected to the subsequent aerobic biological treatment. The wet oxidation was carried out at 250$^{\circ}C$ and the initial pH of 7.0, and led to effluents of which nicotinic acid was oxidized through 6-hydroxynicotinic acid by a Bacillus species in the subsequent aerobic biological treatment. Either homogeneous catalyst of $CuSO_4$ or phenol, which is more degradable in the wet oxidation compared to quinoline, was also used for increasing the oxidation rate in the wet oxidation of quinoline at 200$^{\circ}C$. The oxidation of quinoline in the catalytic wet oxidation and the wet co-oxidation with phenol resulted in effluents of which nicotinic acid was biodegradable earlier in the aerobic biological treatment compared to those out of the non-catalytic wet oxidation at 250$^{\circ}C$. However, the lag phase in the biodegradation of nicotinic acid formed out of the wet oxidation at 250$^{\circ}C$ was considerably shortened after the adaptation of Bacillus species used in the aerobic biological treatment with the effluents of the quinoline wet oxidation.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.7-11
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• 1993

Abstract Oxidation kinetics of silicon oxide films formed by rapid thermal oxidizing Si substrate in $N_2$O ambient studied. The data on $N_2$0 oxidation shows that the interfacial nitrogen-rich layers results in oxide growth in the parabolic regime by impeding oxidant diffusion to the Si$O_2$-Si interface even for ultrathin oxides. The activation energy of parablic rate constant, B, is about 1.5 eV, and the energy increses with oxide thickness.