• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Journal of IKEEE
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• v.19 no.2
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• pp.193-200
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• 2015

In this paper, we propose the radiation measuring algorithm and the device composition using CMOS image sensor. The radiation measuring algorithm using CMOS image sensor is based on the radiation particle distinguishing algorithm projected to the CMOS image sensor and accumulated and average number of pixels of the radiation particles projected to dozens of images per second with CMOS image sensor. The radiation particle distinguishing algorithm projected to the CMOS image sensor measures the radiation particle images by dividing them into R, G and B and adjusting the threshold value that distinguishes light intensity and background from the particle of each image. The radiation measuring algorithm measures radiation with accumulated and average number of radiation particles projected to dozens of images per second with CMOS image sensor according to the preset cycle. The hardware devices to verify the suggested algorithm consists of CMOS image sensor and image signal processor part, control part, power circuit part and display part. The test result of radiation measurement using the suggested CMOS image sensor is as follows. First, using the low-cost CMOS image sensor to measure radiation particles generated similar characteristics to that from measurement with expensive GM Tube. Second, using the low-cost CMOS image sensor to measure radiation presented largely similar characteristics to the linear characteristics of expensive GM Tube.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.8-14
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• 2008

A fully CMOS-integrated carbon nanotube (CNT) sensor array is proposed. After the sensor chip is fabricated in commercial CMOS process, the CNTs network is formed on the top of the fabricated sensor chip through the room-temperature post-CMOS processes. When the resistance of the CNT is changed by the chemical reaction, the read-out circuit in the chip measures the charging time of the $R_{CNT}$-Capacitor. finally the information of measured frequency is converted to a digital code. The CMOS sensor chip was fabricated by standard 0.18um technology and the size of the $8{\times}8$ sensor array is $2mm{\times}2mn$. We have carried out an experiment detecting the biochemical material, glutamate, using this sensor chip. From the experiment the CMOS sensor chip shows the feasibility of sensor for the simultaneous detection of the various target materials.

• Broadcasting and Media Magazine
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• v.5 no.1
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• pp.59-71
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• 2000

This paper presents a survey of the CMOs-based image sensor and its applications to various real field digital camera. CMOS image sensor, called active pixel sensor (APS), has many interesting properties such ash I회 sensitivity, high speed readout, random access and lower power consumption when it is compared with CCd. this paper also addresses the state-of-the-art of CMOS image sensor, and gives some examples of its application to digital camera and special-purpose cameras. with the advancement of semiconductor technology, CMOS image sensor is a future technology for imaging system, and will be widely used in the filed of image capturing for consumer electronics and scientific measurements.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.517-518
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• 2008

Highly integrated ISFETs require the monolithic implementation of ISFETs, CMOS electronics, and additional sensors on the same chip This paper presents novel packaging type of CMOS ISFET pH sensor using standard CMOS FET chip and extended sensing membrane which is separated from CMOS FET. This proposed packaging type will make it easy to fabricate CMOS ISFET pH sensors

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.362-367
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• 2018

A complementary metal oxide semiconductor (CMOS) binary image sensor is proposed for low-power and low-noise operation. The proposed binary image sensor has the advantages of reduced power consumption and fixed pattern noise (FPN). A gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector is used as the proposed CMOS binary image sensor. The GBT PMOSFET-type photodetector has a floating gate that amplifies the photocurrent generated by incident light. Therefore, the sensitivity of the GBT PMOSFET-type photodetector is higher than that of other photodetectors. The proposed CMOS binary image sensor consists of a pixel array with $394(H){\times}250(V)$ pixels, scanners, bias circuits, and column parallel readout circuits for binary image processing. The proposed CMOS binary image sensor was analyzed by simulation. Using the dynamic comparator, a power consumption reduction of approximately 99.7% was achieved, and this performance was verified by the simulation by comparing the results with those of a two-stage comparator. Also, it was confirmed using simulation that the FPN of the proposed CMOS binary image sensor was successfully reduced by use of the double sampling process.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.295-299
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• 2021

In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1935-1936
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• 2008

본 논문은 High speed image를 획득하기 위하여 CMOS Image Sensor를 사용한 고속카메라 구현에 관한 연구이다. Image Sensor로는 CCD Image Sensor와 CMOS Image Sensor가 있으며 CMOS Image Sensor는 CCD Image Sensor에 비해 전력소모가 적고 주변회로의 내장으로 소형화 할 수 있는 장점이 있다. 고속카메라는 충돌 테스트, 에어벡 제어 등의 자동차 분야와 골프 자세 교정 장치와 같은 스포츠 분야, 탄도 방향 측정 장비 등의 국방 분야 등 여러 분야에 많이 사용되고 있다. 본 논문에서 구현한 고속카메라 시스템은 CMOS Image Sensor를 사용하여 1280 * 1024의 해상도로 초당 약 500 frames의 영상을 획득할 수 있다. 또한 CMOS Image Sensor를 제어하고 획득한 이미지를 저장할 수 있도록 FPGA와 DDR2 메모리를 사용하고 저장된 데이터를 PC로 전송하기 위한 Camera Link 모듈 그리고 PC에서 카메라를 제어할 수 있도록 RS-422 통신기능 등으로 구성되었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.3
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• pp.615-622
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• 2009

Advances in wireless communication and hardware technology have made it possible to manufacture high-performance tiny sensor nodes. More recently, the availability of inexpensive CMOS cameras that are able to capture multimedia data from the environment has fostered the development of Wireless Multimedia Sensor Networks (WMSNs). WMSN with the CMOS imaging sensor which is cheaper and consumes lower power than the CCD will not only enhance existing sensor network but also enable several new application such as multimedia surveillance sensor network, multimedia environment monitoring. This paper presents the design of a multimedia sensor network with the image sensor mote developed by us using the CMOS. Given new multimeida sensor network, the new image collecting protocol was tested and analyzed.