• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.6B
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• pp.1074-1079
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• 1999

A high performance CMOS receiver for 155.52 Mbps STM-1 digital communication has been designed and fabricated. The ASIC operates properly with 155.52 MHz clock frequency in case of the data loss due to some system error such as transmission line open or data transfer fail. Also it operates properly in case the system starts after the power failure or system maintenance. The designed circuit has especially PLL based self oscillation loop which operates on abnormal environment which is added to main oscillation loop. The measured results show that the circuit operates well with 153.52 MHz clock frequency not only on normal environment but also on abnormal environment. Rms jitter of the PLL loop is about 23 ps.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.821-829
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• 1991

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.1A
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• pp.47-53
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• 2003

This paper describes the design of a 155 Mb/s multiplexer-demultiplexer chip. This device for a 2.5 Gb/s SDH based transmission system is to interleave the parallel data of 51 Mb/s into 155 Mb/s serial data output, and is to deinterleave a serial input bit stream of 155 Mb/s into the parallel output of 51 Mb/s The input and output of the device are TTL compatible at the low-speed end, but 100K ECL compatible at the high-speed end The device has been fabricated with a 0.7${\mu}m$ BiCMOS gate array The fabricated chip shows the typical phase margin of 180 degrees and output data skew less than 470 ps at the high-speed end. And power dissipation is evaluated under 2.0W.

• Journal of IKEEE
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• v.9 no.1 s.16
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• pp.57-64
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• 2005

This paper presents a built-in current sensor(BICS) that detects defects in CMOS integrated circuits using the current testing technique. This circuit employs a cross-coupled connected PMOS transistors, it is used as a current comparator. The proposed circuit has a negligible impact on the performance of the circuit under test (CUT) and high speed detection time. In addition, in the operation of the normal mode, the BlCS does not have dissipation of extra power, and it can be applied to the deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The area overhead of a BlCS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS standard technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.598-609
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• 2003

This paper describes a CMOS IF PLL frequency synthesizer. The designed frequency synthesizer can be programmed to operate at various intermediate frequencies using different external LC-tanks. The VCO with automatic amplitude control provides constant output power independent of the Q-factor of the external LC-tank. The designed frequency divider includes an 8/9 or 16/17 dual-modulus prescaler and can be programmed to operate at different frequencies by external serial data for various applications. The designed circuit is fabricated using a 0.35${\mu}{\textrm}{m}$ n-well CMOS process. Measurement results show that the phase noise is 114dBc/Hz@100kHz and the lock time is less than 300$mutextrm{s}$. It consumes 16mW from 3V supply. The die area is 730${\mu}{\textrm}{m}$$\times$950${\mu}{\textrm}{m}$.

• Journal of IKEEE
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• v.28 no.2
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• pp.174-179
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• 2024

In this work, we introduce a complementary metal-oxide semiconductor(CMOS)-based integrated circuit(IC) measurement set-up for quantum computer control and read-out using a cryogenic refrigerator. CMOS circuits have to operate at extremely low temperatures of 3 to 5 K for qubit stability and noise reduction. The existing cryogenic measurement system is liquid helium quenching, which is expensive due to the long-term use of expendable resources. Therefore, we describe a cryogenic measurement system based on a closed cycle refrigerator (CCR) that is cost-free even when using helium gas for long periods of time. The refrigerator capable of reaching 4.7 K was built using a Gifford-Mcmahon(G-M) type cryocooler. This is expected to be a cryogenic refrigerator set-up with excellent price competitiveness.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

• Journal of Information Display
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• v.13 no.2
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• pp.73-82
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• 2012

In this paper, a light-emitting diode (LED) backlight driver integrated circuit (IC) for medium-sized liquid crystal displays (LCDs) is proposed. In the proposed IC, a linear current regulator with matched internal resistors and an adaptive phase-shifted pulse-width modulation (PWM) dimming controller are also proposed to improve LED current uniformity and reliability. The double feedback loop control boost converter is used to achieve high power efficiency, fast transient characteristic, and high dimming frequency and resolution. The proposed IC was fabricated using the 0.35 ${\mu}m$ bipolar-CMOS-DMOS (BCD) process. The LED current uniformity and LED fault immunity of the proposed IC were verified through experiments. The measured power efficiency was 90%; the measured LED current uniformity, 97%; and the measured rising and falling times of the LED current, 86 and 7 ns, respectively. Due to the fast rising and falling characteristics, the proposed IC operates up to 39 kHz PWM dimming frequency, with an 8-bit dimming resolution. It was verified that the phase difference between the PWM dimming signals is changed adaptively when LED fault occurs. The experiment results showed that the proposed IC meets the requirements for the LED backlight driver IC for medium-sized LCDs.

• 전자공학회논문지 IE
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• v.47 no.2
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• pp.13-20
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• 2010

This paper describes a current mode PWM DC-DC converter IC for battery charger and supply power converter for portable electronic devices. The maximum supply voltage of IC is 40[V] and 2.8[V]~330[V] DC input power is converted to higher or programmed DC voltage according to external resistor ratio or wire winding ratio of transformer. The maximum supply output current is 3[A] over and voltage error of output node is within 3[%]. The whole circuit needed current mode PWM DC-DC converter circuit is designed. The package dimensions and number of external parts are minimized in order to get a smaller hardware size. The power consumption is smaller then 1[mW] at stand by period with supply voltage of 3.6[V] and maximum energy conversion efficiency is about 86[%]. This device has been designed in a 0.6[um] double poly, double metal 40[V] CMOS process and whole chip size is 2100*2000 [um2].

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.8
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• pp.632-639
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• 2018

This paper presents a single antenna radar sensor with a Ku-band radar transceiver IC realized by 130 nm CMOS processes. In this radar receiver, sensitivity time control using a DC offset cancellation feedback loop is employed to achieve a constant SNR, irrespective of distance. In addition, the receiver RF block has gain control to adjust high dynamic range. The RF output power is 9 dBm and the full chain gain of the Rx is 82 dB. To reduce the direct-coupled Tx signal to the Rx in a single antenna radar, a stub-tuned hybrid coupler is adopted instead of a bulky circulator. The maximum measured distance between the horn antenna and a metal plate target is 6 m.